公开(公告)号：US5912186A

公开(公告)日：1999-06-15

申请号：US755762

申请日：1996-11-21

申请人： Akira Yoshino ,  Takashi Yokoyama ,  Yoshinori Ohmori ,  Kazuma Yamamoto

发明人： Akira Yoshino ,  Takashi Yokoyama ,  Yoshinori Ohmori ,  Kazuma Yamamoto

IPC分类号： H01L21/3065 ,  H01L21/302

CPC分类号： H01L21/3065

摘要： A method for processing semiconductor materials such as a crystalline ingot or a wafer and an apparatus employed therein. An etching gas is supplied on the surface of a semiconductor material, while laser irradiation or light quantum irradiation is applied on a predetermined part of the semiconductor material surface, whereby a component of the etching gas is excited, reacted with a component of the semiconductor material and evaporated for elimination. Thereby, semiconductor materials can be processed hygienically, easily and with high precision.

摘要翻译： 一种用于处理半导体材料如晶锭或晶片的方法及其中使用的装置。 在半导体材料表面的预定部分上施加激光照射或光量子照射，在半导体材料的表面上提供蚀刻气体，由此激发蚀刻气体的成分，与半导体材料的成分反应 并蒸发除去。 因此，半导体材料可以卫生，容易和高精度地加工。

公开(公告)号：US5118642A

公开(公告)日：1992-06-02

申请号：US645441

申请日：1991-01-24

申请人： Akira Yoshino ,  Kenji Okumura ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

发明人： Akira Yoshino ,  Kenji Okumura ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

IPC分类号： C30B25/14

CPC分类号： C30B25/14 ,  Y10S117/902 ,  Y10S148/056

摘要： A reactant gas is fed to a dispersing chamber which is disposed under a reaction chamber, and both disposed within a vacuum chamber. The reactant gas is dispersed and then fed through a plurality of communicating holes to the reaction chamber. A second reactant gas is fed to a lower dispersing chamber. After dispersion, this second gas is fed through pipes through the first dispersing chamber and into the reaction chamber around the first reaction gas. Said first reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the first reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via communicating holes.

摘要翻译： 将反应气体供给到分散室，该分散室设置在反应室下方，并且都设置在真空室内。 反应物气体被分散，然后通过多个连通孔进入反应室。 第二反应气体被供给到下分散室。 分散后，该第二气体通过管道通过第一分散室进料并进入第一反应气体周围的反应室。 所述第一反应气体从所述进料管的端部开口向下吹出，并沿着所述套环部分平行分散并均匀地分散在所述第一反应气体分散室中，并且在所述状态下，通过所述连通孔引入所述反应室。

公开(公告)号：US4979465A

公开(公告)日：1990-12-25

申请号：US457140

申请日：1989-12-26

申请人： Akira Yoshino ,  Kenji Okumura ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

发明人： Akira Yoshino ,  Kenji Okumura ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

IPC分类号： C23C16/44 ,  C23C16/455 ,  C30B25/14

CPC分类号： C23C16/45514 ,  C23C16/455 ,  C23C16/45591 ,  C30B25/14

摘要： The present invention relates to an apparatus for producing semiconductors utilizing vacuum chemical epitaxy (VCE) method.Said VCE method has a high utilization efficiency of reactant gas and can finish the surface of a semiconductor layer formed on the surface of a substrate smoothly in comparision with a conventional Metalorganic Chemical Vapor Deposition Method(MOCVD). However, in case of forming semiconductor layer on the surface of a substrate with a large area, it is impossible to form homogeneous semiconductor layer.According to the present invention, a reactant gas dispersing chamber is disposed under a reaction chamber disposed within a vacuum chamber, the both chambers are communicated by a plurality of communicating holes, a feeding pipe for supplying reactant gas is extended into the reactant gas dispersing chamber, an end opening thereof is faced downward and a color portion is formed in parallel at the circumference of the end opening. Said reactant gas is blown off downward from the end opening of the feeding pipe and dispersed in parallel along the collar portion and dispersed homogeneously in the reactant gas dispersing chamber, and in the state, is introduced to the reaction chamber via said communicating holes. Therefore, even if on a substrate with a large area, homogeneous semiconductor layer can be formed.

公开(公告)号：US4951603A

公开(公告)日：1990-08-28

申请号：US243006

申请日：1988-09-12

申请人： Akira Yoshino ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

发明人： Akira Yoshino ,  Yoshinori Ohmori ,  Toshiharu Ohnishi

IPC分类号： C23C16/44 ,  C23C16/455 ,  C23C16/54 ,  H01L21/00

CPC分类号： C23C16/45574 ,  C23C16/45508 ,  C23C16/45517 ,  C23C16/45565 ,  C23C16/54 ,  H01L21/67017

摘要： Apparatus for continuously producing semiconductor films on substrates in a vacuum chamber. A plurality of reaction chambers are provided within the vacuum chamber, substrates are supported by a top plate and transferred to each reaction chamber, which are filled with a certain reactant gas mixture while the substrates are heated from above the reaction chamber. Continuous treatment of the substrates is provided with an increase in reactant gas utilization efficiency. Disturbance of reactant gas flow by thermal convection is prevented and semiconductor layers having smooth surfaces are formed.

摘要翻译： 用于在真空室中在基板上连续生产半导体膜的装置。 多个反应室设置在真空室内，基板由顶板支撑并转移到每个反应室，每个反应室填充有特定的反应气体混合物，同时从反应室上方加热基板。 随着反应物气体的利用效率的提高，连续处理基板。 通过热对流来防止反应气体流动的干扰，并形成具有平滑表面的半导体层。