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    Vacuum processing apparatus
    2.
    发明授权
    Vacuum processing apparatus 有权
    真空加工设备

    公开(公告)号：US07828928B2

    公开(公告)日：2010-11-09

    申请号：US12199876

    申请日：2008-08-28

    申请人： Akitaka Makino ,  Youji Takahashi ,  Minoru Soraoka ,  Hideki Kihara ,  Susumu Tauchi

    发明人： Akitaka Makino ,  Youji Takahashi ,  Minoru Soraoka ,  Hideki Kihara ,  Susumu Tauchi

    IPC分类号： C23F1/00 ,  H01L21/306

    CPC分类号： H01L21/6719 ,  H01L21/67017 ,  Y10S414/135 ,  Y10S414/139

    摘要： A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.

    摘要翻译： 一种真空处理装置，其特征在于，包括真空容器的外部室，产生用于处理晶片的等离子体的内部室，可拆卸地设置在所述外部室内部的内室，所述晶片所在的晶片保持架为 并且设置在所述晶片保持器的下方排出所述内室的内部的排气装置。 相对于内室和外室之间的空间，内室以气密方式密封，同时空间保持在真空压力。

    Vacuum Processing Apparatus
    4.
    发明申请
    Vacuum Processing Apparatus 有权
    真空处理设备

    公开(公告)号：US20080317581A1

    公开(公告)日：2008-12-25

    申请号：US12199876

    申请日：2008-08-28

    申请人： Akitaka MAKINO ,  Youji Takahashi ,  Minoru Soraoka ,  Hideki Kihara ,  Susumu Tauchi

    发明人： Akitaka MAKINO ,  Youji Takahashi ,  Minoru Soraoka ,  Hideki Kihara ,  Susumu Tauchi

    IPC分类号： H01L21/203

    CPC分类号： H01L21/6719 ,  H01L21/67017 ,  Y10S414/135 ,  Y10S414/139

    摘要： A vacuum processing apparatus includes an outer chamber comprising a vacuum container, an inner chamber in which a plasma used for processing a wafer is generated, the inner chamber being detachably disposed inside of the outer chamber, a wafer holder on which the wafer is located is disposed inside of the inner chamber, and an exhausting device disposed below the wafer holder which exhausts the inside of the inner chamber. The inner chamber is sealed in air-tight manner with respect to a space between the inner chamber and the outer chamber while the space is maintained at a vacuum pressure.

    摘要翻译： 一种真空处理装置，其特征在于，包括真空容器的外部室，产生用于处理晶片的等离子体的内部室，可拆卸地设置在所述外部室内部的内室，所述晶片所在的晶片保持架为 并且设置在所述晶片保持器的下方排出所述内室的内部的排气装置。 相对于内室和外室之间的空间，内室以气密方式密封，同时空间保持在真空压力。

    Vacuum processing apparatus
    8.
    发明申请
    Vacuum processing apparatus 审中-公开
    真空加工设备

    公开(公告)号：US20050051092A1

    公开(公告)日：2005-03-10

    申请号：US10812086

    申请日：2004-03-30

    申请人： Akitaka Makino ,  Youji Takahashi ,  Minoru Soraoka ,  Hideki Kihara ,  Susumu Tauchi

    发明人： Akitaka Makino ,  Youji Takahashi ,  Minoru Soraoka ,  Hideki Kihara ,  Susumu Tauchi

    IPC分类号： C23C16/00 ,  H01L21/00

    CPC分类号： H01L21/6719 ,  H01L21/67017 ,  Y10S414/135 ,  Y10S414/139

    摘要： A vacuum processing apparatus including a transfer chamber inside of which an object wafer to be processed is transferred, and two processing chambers disposed outside of the transfer chamber and attached to the transfer chamber in a detachable manner. The inside of each processing chamber is decompressed so as to process the wafer being placed therein using a plasma generated from a processing gas supplied thereto, and two supply units supply the processing gas to the two processing chambers, respectively. The two supply units are disposed vertically outside of the transfer chamber and between the two processing chambers.

    摘要翻译： 一种真空处理装置，包括传送室，其内部传送有待处理的物体晶片，以及设置在传送室外部并以可拆卸的方式附接到传送室的两个处理室。 每个处理室的内部被减压以便使用从供给的处理气体产生的等离子体处理放置在其中的晶片，并且两个供应单元分别将处理气体供应到两个处理室。 两个供应单元垂直设置在传送室外部和两个处理室之间。