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    Magnetic MEMS sensors
    3.
    发明申请
    Magnetic MEMS sensors 失效
    磁性MEMS传感器

    公开(公告)号：US20080052932A1

    公开(公告)日：2008-03-06

    申请号：US11514793

    申请日：2006-09-01

    申请人： Song Sheng Xue ,  Patrick Joseph Ryan ,  Nurul Amin

    发明人： Song Sheng Xue ,  Patrick Joseph Ryan ,  Nurul Amin

    IPC分类号： G01C17/38

    CPC分类号： G01C17/28

    摘要： The disclosure relates to micro-electromechanical systems (MEMS) and magnetic MEMS sensors. The sensors include a substrate having a surface, a first magnetic field detector positioned on the surface, a second magnetic field detector positioned on the surface proximate to the first magnetic field detector, and a third magnetic field detector positioned on the surface proximate to the first and second magnetic field detectors. Each of the first, second and third magnetic field detector is capable of detecting external magnetic fields that are mutually orthogonal along three directions. In certain embodiments, the magnetic MEMS sensors may be useful as electronic compasses. The disclosure also relates to fabricating a magnetic MEMS device, such as an electronic compass, from or on a single wafer, which includes multiple MEMS sensors.

    摘要翻译： 本公开涉及微机电系统（MEMS）和磁MEMS传感器。 传感器包括具有表面的基板，位于表面上的第一磁场检测器，位于靠近第一磁场检测器的表面上的第二磁场检测器，以及位于靠近第一磁场检测器的表面上的第三磁场检测器 和第二磁场检测器。 第一，第二和第三磁场检测器中的每一个能够检测沿着三个方向相互正交的外部磁场。 在某些实施例中，磁性MEMS传感器可用作电子罗盘。 本公开还涉及从包括多个MEMS传感器的单个晶片上或之上制造诸如电子罗盘的磁MEMS装置。

    Magnetoresistive sensor having a hard-biasing material and a cubic-titanium-tungsten underlayer
    4.
    发明授权
    Magnetoresistive sensor having a hard-biasing material and a cubic-titanium-tungsten underlayer 失效
    具有硬偏置材料和立方钛钨基底层的磁阻传感器

    公开(公告)号：US06278595B1

    公开(公告)日：2001-08-21

    申请号：US09237361

    申请日：1999-01-26

    申请人： Song Sheng Xue ,  Bogdan Marius Simion ,  James Frank Dolejsi ,  Patrick Joseph Ryan

    发明人： Song Sheng Xue ,  Bogdan Marius Simion ,  James Frank Dolejsi ,  Patrick Joseph Ryan

    IPC分类号： G11B539

    CPC分类号： G11B5/3932 ,  G11B5/3903

    摘要： The present invention is a magnetoresistive (MR) sensor that combines a hard-biasing material with an underlayer of cubic-titanium-tungsten to improve the stability of the MR sensor. The permanency of the hard-biasing material affects both the transverse and longitudinal biasing of the MR sensor, which in turn affects the stability of the MR sensor. The stability of the hard-biasing material is improved by combining it with an underlayer of cubic-titanium-tungsten. The underlayer enhances the hard-biasing material by improving the longitudinal magnetic anisotropy, the coercivity, and the in-plane squareness of the hard-biasing material. The combination of hard-biasing material and cubic-titanium-tungsten underlayer can be used in a variety of MR sensor embodiments, specifically an abutted junction or an overlaid structure. The method of making the abutted junction or overlaid structures is also improved by using cubic-titanium-tungsten as the underlayer of the hard-biasing material. The cubic-titanium-tungsten underlayer can be deposited at temperatures which are normal for the manufacturing of MR sensors, thus extra process steps are not needed. In addition, the process is more consistent and reliable.

    摘要翻译： 本发明是一种磁阻（MR）传感器，其将硬偏压材料与立方钛钨的底层组合以提高MR传感器的稳定性。 硬偏压材料的永久性影响MR传感器的横向和纵向偏置，这又影响MR传感器的稳定性。 通过将其与立方钛 - 钨的底层组合来改善硬偏压材料的稳定性。 底层通过改善硬偏压材料的纵向磁各向异性，矫顽力和面内矩形度来增强硬偏压材料。 硬偏压材料和立方钛钨钨底层的组合可用于各种MR传感器实施例中，特别是邻接结或覆盖结构。 通过使用立方钛钨作为硬质偏压材料的底层，也可以提高制造邻接结或重叠结构的方法。 立方钛 - 钨底层可以在用于制造MR传感器的正常温度下沉积，因此不需要额外的工艺步骤。 此外，该过程更加一致和可靠。

    Side flux guide for current perpendicular to plane magnetoresistive transducer
    5.
    发明授权
    Side flux guide for current perpendicular to plane magnetoresistive transducer 失效
    用于垂直于平面磁阻换能器的电流的侧向通量

    公开(公告)号：US06801410B2

    公开(公告)日：2004-10-05

    申请号：US10247124

    申请日：2002-09-19

    申请人： Song Sheng Xue ,  Paul E. Anderson ,  Patrick Joseph Ryan

    发明人： Song Sheng Xue ,  Paul E. Anderson ,  Patrick Joseph Ryan

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3146 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3929

    摘要： A transducing head according to the present invention includes a pair of electrodes, a pair of biasing elements and a magnetoresistive sensor. The magnetoresistive sensor is positioned between the pair of electrodes. The magnetoresistive sensor includes a pair of flux guides and a free layer positioned substantially co-planar with and between the pair of flux guides. The pair of electrodes are for providing a sense current to the free layer in a direction substantially perpendicular to a plane of the free layer. The pair of biasing elements are positioned on opposing sides of the magnetoresistive sensor for providing longitudinal bias to the free layer.

    摘要翻译： 根据本发明的转换头包括一对电极，一对偏置元件和磁阻传感器。 磁阻传感器位于一对电极之间。 磁阻传感器包括一对磁通引导件和与该对通量引导件之间基本上共平面的自由层。 该对电极用于在基本上垂直于自由层的平面的方向上向自由层提供感测电流。 一对偏置元件位于磁阻传感器的相对侧上，用于向自由层提供纵向偏置。

    Overlaid MR structure with magnetostatic stabilized soft adjacent layer
    7.
    发明授权
    Overlaid MR structure with magnetostatic stabilized soft adjacent layer 失效

    公开(公告)号：US06449135B1

    公开(公告)日：2002-09-10

    申请号：US09180560

    申请日：1998-11-06

    申请人： Juren Ding ,  Song Sheng Xue ,  Juan Fernandez-deCastro ,  James Dolejsi ,  Patrick Joseph Ryan

    发明人： Juren Ding ,  Song Sheng Xue ,  Juan Fernandez-deCastro ,  James Dolejsi ,  Patrick Joseph Ryan

    IPC分类号： G11B539

    CPC分类号： B82Y25/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3932 ,  Y10T29/49044

    摘要： The present invention is a magnetoresistive (MR) sensor (100) that combines the advantages of abutted junction structure and regular overlaid structure. The abutted junction design is used with the soft adjacent layer (SAL) (108) and the overlaid structure is used with the MR element (120). The method of making the MR sensor (100) comprises depositing SAL (108) on top of the gap layer (106) and depositing spacer material (110) on top of the SAL (108). A mask (130) is placed over the central region of the spacer material (110) and SAL (108). The spacer material (110) and SAL (108) are removed in the areas not covered by the mask (130). An underlayer material (112) is deposited in the areas where the SAL (108) and spacer material (110) were removed. A hard-biasing material (114) is deposited on top of the underlayer (112). The mask (130) is removed and the MR element (120) is deposited on top of the spacer material (110) in the active region of the sensor (132) and on top of the hard-biasing material (114) in the passive regions of the sensor (134, 136). A cap layer (122) is deposited on top of the MR element (120) in the active (132) and passive regions (134, 136) of the MR sensor (100). Contacts (124) are placed on top of the cap layer (122) in the passive regions of the sensor (134, 136). In another embodiment of the method, additional material is added to separate the hard-biasing material (114), thus improving the signal to noise ratio. A low resistivity material (116) is added after the first hard-biasing material (114) and a second hard-biasing material (118) is deposited on top of the low-resistivity material (116). The additional materials are deposited before the mask (130) is removed. Once the mask (130) is removed, the MR senor (100) is built in accordance with the first embodiment.