摘要:
Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.
摘要:
Magnetic tunnel junction cells and methods of making magnetic tunnel junction cells that include a radially protective layer extending proximate at least the ferromagnetic free layer of the cell. The radially protective layer can be specifically chosen in thickness, deposition method, material composition, and/or extent along the cell layers to enhance the effective magnetic properties of the free layer, including the effective coercivity, effective magnetic anisotropy, effective dispersion in magnetic moment, or effective spin polarization.
摘要:
Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.
摘要:
Method and apparatus for using a uni-directional write current to store different logic states in a non-volatile memory cell, such as a modified STRAM cell. In some embodiments, the memory cell has an unpinned ferromagnetic reference layer adjacent a cladded conductor, a ferromagnetic storage layer and a tunneling barrier between the reference layer and the storage layer. Passage of a current along the cladded conductor induces a selected magnetic orientation in the reference layer, which is transferred through the tunneling barrier for storage by the storage layer. Further, the orientation of the applying step is provided by a cladding layer adjacent a conductor along which a current is passed and the current induces a magnetic field in the cladding layer of the selected magnetic orientation.
摘要:
A multilayered magnetoresistive device includes a specular layer positioned on at least one sidewall and a copper layer positioned between the specular layer and the sidewall.
摘要:
A device resets a biasing magnetization of a biasing element in a magnetic sensor. The device includes a magnetic structure that is magnetically coupled to the biasing element. A conductive element is disposed around at least a portion of the magnetic structure. When a current is passed through the conductive element, a magnetic field is produced that resets the biasing magnetization of the biasing element.
摘要:
Spin torque magnetic memory elements that have a pinned layer, two free layers, and a current-blocking insulating layer proximate to at least one of the free layers. The resistive state (e.g., low resistance or high resistance) of the memory elements is altered by passing electric current through the element in one direction. In other words, to change from a low resistance to a high resistance, the direction of electric current is the same as to change from a high resistance to a low resistance. The elements have a unidirectional write scheme.
摘要:
A method for forming high aspect ratio metallization on a wafer is implemented in the formation of a disc drive recording head. The process involves patterning photoresist where metal is to be later deposited, milling around the photoresist perimeter, depositing insulating material in the milled region, around and over the photoresist, then dissolving the photoresist to be replaced with metal. The process features the ability to desirably increase the aspect ratio of height to width of a metallization on a wafer. An improved aspect ratio can be utilized to improve the quality of a write pole in a recording head, effectively increasing its achievable recording density.
摘要:
A method of in-situ remediation of chlorinated and fluorinated reaction by-products resulting from energetic detonations and/or burning of energetic mixtures comprising adding a quantity of Calcium disilicide (CaSi2), Calcium silicide (CaSi), Magnesium disilicide (MgSi2), Magnesium silicide, or Aluminum Calcium (Al2Ca) compounds to the energetic mixture prior to its detonation and/or burning. Advantageously, the in-situ production of more inert by-products results from this addition thereby preventing the formation of any less-desirable by-products.
摘要:
Damascene processes using physical vapor deposition (PVD) sputter carbon film as a chemical mechanical planarization (CMP) stop layer for forming a magnetic recording head are provided. In one embodiment, one such process includes providing an insulator, removing a portion of the insulator to form a trench within the insulator, depositing a carbon material on first portions of the insulator using a physical vapor deposition process, disposing at least one ferromagnetic material on second portions of the insulator to form a pole including a portion of the ferromagnetic material within the trench, and performing a chemical mechanical planarization on the at least one ferromagnetic material using at least a portion of the carbon material as a stop for the chemical mechanical planarization.