High-efficiency single-turn write head for high-speed recording
    1.
    发明授权
    High-efficiency single-turn write head for high-speed recording 有权
    高效单圈写头用于高速录制

    公开(公告)号:US06972932B2

    公开(公告)日:2005-12-06

    申请号:US09949407

    申请日:2001-09-06

    IPC分类号: G11B5/17 G11B5/31 G11B5/127

    摘要: A write element for a magnetoresistive (“MR”) head or a giant magnetoresistive (GMR) head includes a yoke and a coil. The coil made of a microstrip transmission line. The coil is a single turn and is U-shaped. The yoke of the write element includes laminated bottom pole, and top pole which are made of thin layers of ferromagnetic material antiferromagnetically exchange coupled to each other through a very thin nonmagnetic metallic layer. The yoke is made of metallic superlattices exhibiting strong antiferromagnetic exchange coupling between ferromagnetic layers through thin nonmagnetic metallic layers. The coil and the yoke are intertwined to provide two or more flux interactions between them. The yoke has a symmetrical structure with three interconnect vias, thereby reducing the effective magnetic length of the yoke. The antiferromagnetically exchange-coupled yoke has a stable single domain structure that exhibits very high switching time and does not suffer from hysteresis losses.

    摘要翻译: 用于磁阻(“MR”)磁头或巨磁阻(GMR)磁头的写元件包括磁轭和线圈。 线圈由微带传输线制成。 线圈是单圈,为U形。 写入元件的磁轭包括层叠的底极和顶极,其由铁磁材料的薄层制成,通过非常薄的非磁性金属层反铁磁交换而彼此耦合。 磁轭由金属超晶格形成,通过薄的非磁性金属层在铁磁层之间表现出强烈的反铁磁交换耦合。 线圈和轭相互缠绕以在它们之间提供两个或更多的通量相互作用。 轭具有具有三个互连通孔的对称结构,从而减小轭的有效磁长度。 反铁磁交换耦合磁轭具有稳定的单畴结构,其显示非常高的开关时间并且不会受到磁滞损耗的影响。

    Differential CPP reader for perpendicular magnetic recording
    2.
    发明授权
    Differential CPP reader for perpendicular magnetic recording 有权
    用于垂直磁记录的差分CPP读码器

    公开(公告)号:US07016160B2

    公开(公告)日:2006-03-21

    申请号:US10715695

    申请日:2003-11-18

    IPC分类号: G11B5/127

    摘要: A differential read head comprises one tri-layer reader or a plurality of tri-layer readers operating in a current perpendicular to plane (CPP) mode. The tri-layer readers each comprise a first free layer, a second free layer, and a nonmagnetic layer positioned therebetween. A nonmagnetic spacer is positioned between the plurality of tri-layer readers for electrically connecting the plurality of tri-layer readers in series such that a single CPP sense current representing a differential signal flows serially through the read head. With a single tri-layer reader, the free layers are spaced by a width substantially similar to the transition width of the magnetic medium.

    摘要翻译: 差分读取头包括在垂直于平面(CPP)模式的电流中操作的一个三层读取器或多个三层读取器。 三层读取器各自包括位于其间的第一自由层,第二自由层和非磁性层。 非磁性间隔件位于多个三层读取器之间,用于串联电连接多个三层读取器,使得表示差分信号的单个CPP感测电流串行地流过读取头。 使用单个三层读取器,自由层间隔开与磁介质的过渡宽度基本相似的宽度。

    Multi-bit memory with selectable magnetic layer
    3.
    发明授权
    Multi-bit memory with selectable magnetic layer 有权
    具有可选磁性层的多位存储器

    公开(公告)号:US08199570B2

    公开(公告)日:2012-06-12

    申请号:US12900314

    申请日:2010-10-07

    IPC分类号: G11C11/15

    摘要: An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.

    摘要翻译: 一种用于能够用磁性层选择的多位存储器的装置和相关方法。 本发明的各种实施方案通常涉及具有低矫顽力的第一选择层,其设置在第一和第二存储层之间,每个具有高矫顽力。 响应于第一选择层的磁饱和,允许将逻辑状态编程到第二存储层。

    Multi-bit memory with selectable magnetic layer
    6.
    发明授权
    Multi-bit memory with selectable magnetic layer 有权
    具有可选磁性层的多位存储器

    公开(公告)号:US08767456B2

    公开(公告)日:2014-07-01

    申请号:US13473448

    申请日:2012-05-16

    IPC分类号: G11C11/15

    摘要: An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.

    摘要翻译: 一种用于能够用磁性层选择的多位存储器的装置和相关方法。 本发明的各种实施方案通常涉及具有低矫顽力的第一选择层,其设置在第一和第二存储层之间,每个具有高矫顽力。 响应于第一选择层的磁饱和,允许将逻辑状态编程到第二存储层。

    Differential CPP reader for perpendicular magnetic recording
    8.
    发明申请
    Differential CPP reader for perpendicular magnetic recording 有权
    用于垂直磁记录的差分CPP读码器

    公开(公告)号:US20050105219A1

    公开(公告)日:2005-05-19

    申请号:US10715695

    申请日:2003-11-18

    摘要: A differential read head comprises one tri-layer reader or a plurality of tri-layer readers operating in a current perpendicular to plane (CPP) mode. The tri-layer readers each comprise a first free layer, a second free layer, and a nonmagnetic layer positioned therebetween. A nonmagnetic spacer means is positioned between the plurality of tri-layer readers for electrically connecting the plurality of tri-layer readers in series such that a single CPP sense current representing a differential signal flows serially through the read head. With a single tri-layer reader, the free layers are spaced by a width substantially similar to the transition width of the magnetic medium.

    摘要翻译: 差分读取头包括在垂直于平面(CPP)模式的电流中操作的一个三层读取器或多个三层读取器。 三层读取器各自包括位于其间的第一自由层,第二自由层和非磁性层。 非磁性间隔装置位于多个三层读取器之间,用于串联电连接多个三层读取器,使得表示差分信号的单个CPP感测电流串行流过读取头。 使用单个三层读取器,自由层间隔开与磁介质的过渡宽度基本相似的宽度。

    MULTI-BIT MEMORY WITH SELECTABLE MAGNETIC LAYER
    9.
    发明申请
    MULTI-BIT MEMORY WITH SELECTABLE MAGNETIC LAYER 有权
    具有可选磁性层的多位存储器

    公开(公告)号:US20120224418A1

    公开(公告)日:2012-09-06

    申请号:US13473448

    申请日:2012-05-16

    IPC分类号: G11C11/15

    摘要: An apparatus and associated method for a multi-bit memory capable of being selected with a magnetic layer. Various embodiments of the present invention are generally directed to a first selection layer with a low coercivity that is disposed between first and second storage layers that each have a high coercivity. In response to magnetic saturation of the first selection layer, programming of a logical state to the second storage layer is allowed.

    摘要翻译: 一种用于能够用磁性层选择的多位存储器的装置和相关方法。 本发明的各种实施方案通常涉及具有低矫顽力的第一选择层,其设置在第一和第二存储层之间,每个具有高矫顽力。 响应于第一选择层的磁饱和,允许将逻辑状态编程到第二存储层。