MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    3.
    发明申请
    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置

    公开(公告)号:US20120092637A1

    公开(公告)日:2012-04-19

    申请号:US13333350

    申请日:2011-12-21

    IPC分类号: G03B27/54

    摘要: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置,以及通过该方法制造的相关部件,方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位,幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比,在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Microlithographic projection exposure apparatus
    4.
    发明授权
    Microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置

    公开(公告)号:US08107054B2

    公开(公告)日:2012-01-31

    申请号:US12210514

    申请日:2008-09-15

    摘要: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置,以及通过该方法制造的相关部件,方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位,幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比,在结构成像中获得的掩模诱导的图像对比损失可以减少。

    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS
    5.
    发明申请
    MICROLITHOGRAPHIC PROJECTION EXPOSURE APPARATUS 有权
    微波投影曝光装置

    公开(公告)号:US20090073398A1

    公开(公告)日:2009-03-19

    申请号:US12210514

    申请日:2008-09-15

    IPC分类号: G03B27/52 G03B27/72

    摘要: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置,以及通过该方法制造的相关部件,方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面中修改通过该平面的光的相位,幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比,在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Microlithographic projection exposure apparatus
    6.
    发明授权
    Microlithographic projection exposure apparatus 有权
    微光刻投影曝光装置

    公开(公告)号:US08982325B2

    公开(公告)日:2015-03-17

    申请号:US13333350

    申请日:2011-12-21

    IPC分类号: G03F7/20

    摘要: The disclosure relates to a microlithographic projection exposure apparatus and a microlithographic projection exposure apparatus, as well as related components, methods and articles made by the methods. The microlithographic projection exposure apparatus includes an illumination system and a projection objective. The illumination system can illuminate a mask arranged in an object plane of the projection objective. The mask can have structures which are to be imaged. The method can include illuminating a pupil plane of the illumination system with light. The method can also include modifying, in a plane of the projection objective, the phase, amplitude and/or polarization of the light passing through that plane. The modification can be effected for at least two diffraction orders in mutually different ways. A mask-induced loss in image contrast obtained in the imaging of the structures can be reduced compared to a method without the modification.

    摘要翻译: 本发明涉及微光刻投影曝光装置和微光刻投影曝光装置,以及通过该方法制造的相关部件,方法和制品。 微光刻投影曝光装置包括照明系统和投影物镜。 照明系统可以照亮布置在投影物镜的物平面中的掩模。 掩模可以具有待成像的结构。 该方法可以包括用光照射照明系统的光瞳平面。 该方法还可以包括在投影物镜的平面内修改通过该平面的光的相位,幅度和/或极化。 可以以相互不同的方式对至少两个衍射级进行修改。 与没有修改的方法相比,在结构成像中获得的掩模诱导的图像对比损失可以减少。

    Projection objective and projection exposure apparatus including the same
    7.
    发明授权
    Projection objective and projection exposure apparatus including the same 有权
    投影物镜与投影曝光装置相同

    公开(公告)号:US07965453B2

    公开(公告)日:2011-06-21

    申请号:US12651829

    申请日:2010-01-04

    IPC分类号: G02B13/14 G02B17/08

    摘要: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |β|

    摘要翻译: 用于投影光刻的缩小投影物镜具有多个光学元件,其被配置为将布置在投影物镜的物体表面中的有效物场成像为以缩小倍率|&bgr布置在投影物镜的图像表面中的有效图像场 ; | <1。 光学元件形成干燥物镜,其适用于具有折射率n'<1.01的气体介质的像差,填充投影物镜的出射表面和图像表面之间的有限厚度的图像空间。 光学元件包括具有最大透镜直径Dmax的最大透镜,并且被配置为在具有最大图像场高度Y'的有效图像场中提供图像侧数值孔径NA <1。 COMP = Dmax /(Y'·(NA / n')2)条件COMP <15.8成立。 优选实施例具有相对较小的透镜总数,这允许以相对低的材料消耗制造尺寸相对较小的投影物镜,产生用于干式光刻的高性能,重量轻,紧凑的缩小投影物镜。

    Projection objective and projection exposure apparatus including the same
    8.
    发明授权
    Projection objective and projection exposure apparatus including the same 有权
    投影物镜与投影曝光装置相同

    公开(公告)号:US07738188B2

    公开(公告)日:2010-06-15

    申请号:US11727013

    申请日:2007-03-23

    IPC分类号: G02B13/14 G02B17/08

    摘要: A reduction projection objective for projection lithography has a plurality of optical elements configured to image an effective object field arranged in an object surface of the projection objective into an effective image field arranged in an image surface of the projection objective at a reducing magnification ratio |β|

    摘要翻译: 用于投影光刻的缩小投影物镜具有多个光学元件,其被配置为将布置在投影物镜的物体表面中的有效物场成像为以缩小倍率|&bgr布置在投影物镜的图像表面中的有效图像场 ; | <1。 光学元件形成干燥物镜,其适用于具有折射率n'<1.01的气体介质的像差,填充投影物镜的出射表面和图像表面之间的有限厚度的图像空间。 光学元件包括具有最大透镜直径Dmax的最大透镜,并且被配置为在具有最大图像场高度Y'的有效图像场中提供图像侧数值孔径NA <1。 COMP = Dmax /(Y'·(NA / n')2)条件COMP <15.8成立。

    Projection exposure apparatus, projection exposure method and projection objective
    9.
    发明授权
    Projection exposure apparatus, projection exposure method and projection objective 有权
    投影曝光装置,投影曝光方法和投影物镜

    公开(公告)号:US07834981B2

    公开(公告)日:2010-11-16

    申请号:US11747630

    申请日:2007-05-11

    IPC分类号: G03B27/54 G03B27/42

    摘要: A projection exposure apparatus for the exposure of a radiation-sensitive substrate arranged in the region of an image surface of a projection objective with at least one image of a pattern of a mask that is arranged in the region of an object surface of the projection objective has a light source for emitting ultraviolet light from a wavelength band having a bandwidth Δλ>10 pm around a central operating wavelength λ>200 nm; an illumination system for receiving the light from the light source and for directing illumination radiation onto the pattern of the mask; and a projection objective for the imaging of the structure of the mask onto a light-sensitive substrate. The projection objective is a catadioptric projection objective having at least one concave mirror arranged in a region of a pupil surface of the projection objective, and a negative group having at least one negative lens arranged in direct proximity to the concave mirror in a region near the pupil surface, where a marginal ray height (MRH) of the imaging is greater than a chief ray height (CRH).

    摘要翻译: 一种投影曝光装置,用于曝光布置在投影物镜的图像表面的区域中的辐射敏感基板,其具有布置在投影物镜的物体表面的区域中的掩模图案的至少一个图像 具有用于从围绕中心工作波长λ> 200nm的带宽&Dgr;λ>10μm的波长带发射紫外光的光源; 照明系统,用于接收来自光源的光并将照射辐射引导到掩模的图案上; 以及用于将掩模的结构成像到感光基板上的投影物镜。 投影物镜是一个反射折射投影物镜,它具有至少一个凹面镜,该凹面镜布置在投影物镜的光瞳表面的区域中,以及一个负极组,具有至少一个负透镜, 瞳孔表面,其中成像的边缘射线高度(MRH)大于主射线高度(CRH)。

    Imaging microoptics for measuring the position of an aerial image
    10.
    发明授权
    Imaging microoptics for measuring the position of an aerial image 有权
    用于测量空中图像位置的成像微光学

    公开(公告)号:US08451458B2

    公开(公告)日:2013-05-28

    申请号:US13423760

    申请日:2012-03-19

    IPC分类号: G02B13/14

    CPC分类号: G03F7/70666 G02B13/143

    摘要: An imaging microoptics, which is compact and robust, includes at least one aspherical member and has a folded beam path. The imaging microoptics provides a magnification |β′| of >800 by magnitude. Furthermore, a system for positioning a wafer with respect to a projection optics includes the imaging microoptics, an image sensor positionable in the image plane of the imaging microoptics, for measuring a position of an aerial image of the projection optics, and a wafer stage with an actuator and a controller for positioning the wafer in dependence of an output signal of the image sensor.

    摘要翻译: 紧凑且坚固的成像微光学件包括至少一个非球面构件并且具有折叠的光束路径。 成像微光学提供了一个放大| beta | | > 800。 此外,用于相对于投影光学元件定位晶片的系统包括成像微光学,可定位在成像微光学图像平面中的图像传感器,用于测量投影光学器件的空间图像的位置,以及具有 致动器和用于根据图像传感器的输出信号定位晶片的控制器。