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公开(公告)号：US20130011960A1
公开(公告)日：2013-01-10
申请号：US13616418
申请日：2012-09-14
CPC分类号： H01B1/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/22 , H01L51/0045 , H01L51/442 , Y02E10/549
摘要： Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
摘要翻译： 提供了通过化学掺杂增加石墨烯膜的导电性的技术。 一方面，提高石墨烯膜的导电性的方法包括以下步骤。 石墨烯膜由一个或多个石墨烯片形成。 将石墨烯片暴露于具有被配置为掺杂石墨烯片的单电子氧化物的溶液以增加其导电性，从而增加膜的总导电性。 在石墨烯片暴露于单电子氧化剂溶液之前，可以形成石墨烯膜。 或者，石墨烯片可以在形成石墨烯膜之前暴露于单电子氧化剂溶液。 还提供了一种从石墨烯膜制造光电器件上的透明电极的方法。
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公开(公告)号：US08853034B2
公开(公告)日：2014-10-07
申请号：US13616418
申请日：2012-09-14
IPC分类号： H01L21/336 , C01B31/04 , B82Y30/00 , H01B1/04 , H01L51/00 , B82Y40/00 , B82Y10/00 , H01L51/44
CPC分类号： H01B1/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/22 , H01L51/0045 , H01L51/442 , Y02E10/549
摘要： Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
摘要翻译： 提供了通过化学掺杂增加石墨烯膜的导电性的技术。 一方面，提高石墨烯膜的导电性的方法包括以下步骤。 石墨烯膜由一个或多个石墨烯片形成。 将石墨烯片暴露于具有被配置为掺杂石墨烯片的单电子氧化物的溶液以增加其导电性，从而增加膜的总导电性。 在石墨烯片暴露于单电子氧化剂溶液之前，可以形成石墨烯膜。 或者，石墨烯片可以在形成石墨烯膜之前暴露于单电子氧化剂溶液。 还提供了一种从石墨烯膜制造光电器件上的透明电极的方法。
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公开(公告)号：US20130025662A1
公开(公告)日：2013-01-31
申请号：US13189909
申请日：2011-07-25
IPC分类号： H01B1/24 , H01L31/0224 , H01L31/18 , B82Y30/00
CPC分类号： H01B1/04 , B82Y30/00 , B82Y40/00 , H01L31/022466 , H01L31/1884 , Y02E10/50
摘要： Techniques for reducing the resistivity of carbon nanotube and graphene materials are provided. In one aspect, a method of producing a doped carbon film having reduced resistivity is provided. The method includes the following steps. A carbon material selected from the group consisting of: a nanotube, graphene, fullerene and pentacene is provided. The carbon material and a dopant solution comprising an oxidized form of ruthenium bipyridyl are contacted, wherein the contacting is carried out under conditions sufficient to produce the doped carbon film having reduced resistivity.
摘要翻译： 提供了降低碳纳米管和石墨烯材料的电阻率的技术。 一方面，提供了具有降低电阻率的掺杂碳膜的制造方法。 该方法包括以下步骤。 提供了选自纳米管，石墨烯，富勒烯和并五苯的碳材料。 接触碳材料和包含氧化形式的钌联吡啶的掺杂剂溶液，其中接触在足以产生具有降低的电阻率的掺杂碳膜的条件下进行。
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公开(公告)号：US08293607B2
公开(公告)日：2012-10-23
申请号：US12859426
申请日：2010-08-19
IPC分类号： H01L21/336
CPC分类号： H01B1/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/22 , H01L51/0045 , H01L51/442 , Y02E10/549
摘要： Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
摘要翻译： 提供了通过化学掺杂增加石墨烯膜的导电性的技术。 一方面，提高石墨烯膜的导电性的方法包括以下步骤。 石墨烯膜由一个或多个石墨烯片形成。 将石墨烯片暴露于具有被配置为掺杂石墨烯片的单电子氧化物的溶液以增加其导电性，从而增加膜的总导电性。 在石墨烯片暴露于单电子氧化剂溶液之前，可以形成石墨烯膜。 或者，石墨烯片可以在形成石墨烯膜之前暴露于单电子氧化剂溶液。 还提供了一种从石墨烯膜制造光电器件上的透明电极的方法。
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公开(公告)号：US20120045865A1
公开(公告)日：2012-02-23
申请号：US12859426
申请日：2010-08-19
CPC分类号： H01B1/04 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/194 , C01B2204/22 , H01L51/0045 , H01L51/442 , Y02E10/549
摘要： Techniques for increasing conductivity of graphene films by chemical doping are provided. In one aspect, a method for increasing conductivity of a graphene film includes the following steps. The graphene film is formed from one or more graphene sheets. The graphene sheets are exposed to a solution having a one-electron oxidant configured to dope the graphene sheets to increase a conductivity thereof, thereby increasing the overall conductivity of the film. The graphene film can be formed prior to the graphene sheets being exposed to the one-electron oxidant solution. Alternatively, the graphene sheets can be exposed to the one-electron oxidant solution prior to the graphene film being formed. A method of fabricating a transparent electrode on a photovoltaic device from a graphene film is also provided.
摘要翻译： 提供了通过化学掺杂增加石墨烯膜的导电性的技术。 一方面，提高石墨烯膜的导电性的方法包括以下步骤。 石墨烯膜由一个或多个石墨烯片形成。 将石墨烯片暴露于具有被配置为掺杂石墨烯片的单电子氧化物的溶液以增加其导电性，从而增加膜的总导电性。 在石墨烯片暴露于单电子氧化剂溶液之前，可以形成石墨烯膜。 或者，石墨烯片可以在形成石墨烯膜之前暴露于单电子氧化剂溶液。 还提供了一种从石墨烯膜制造光电器件上的透明电极的方法。
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6.发明申请SEMICONDUCTOR DEVICE INCLUDING GRAPHENE LAYER AND METHOD OF MAKING THE SEMICONDUCTOR DEVICE 有权包括石墨层的半导体器件和制造半导体器件的方法公开(公告)号：US20130248823A1
公开(公告)日：2013-09-26
申请号：US13425302
申请日：2012-03-20
IPC分类号： H01L29/775 , H01L21/335
CPC分类号： H01L29/41733 , C01B32/19 , H01L21/02527 , H01L29/1606 , H01L29/778 , Y10S977/734
摘要： A semiconductor device includes a substrate, first plural contacts formed in the substrate, a graphene layer formed on the substrate and on the first plural contacts and second plural contacts formed on the graphene layer such that the graphene layer is formed between the first plural contacts and the second plural contacts.
摘要翻译： 半导体器件包括衬底，形成在衬底中的第一多个触点，形成在衬底上的石墨烯层和在第一多个触点上形成的第二多个触点和形成在石墨烯层上的第二多个触点，使得石墨烯层形成在第一多个触点和 第二个复数接触。
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7.发明授权Semiconductor device including graphene layer and method of making the semiconductor device 有权包括石墨烯层的半导体器件和制造半导体器件的方法公开(公告)号：US09064842B2
公开(公告)日：2015-06-23
申请号：US13425302
申请日：2012-03-20
IPC分类号： H01L29/778 , H01L21/335 , H01L29/417 , H01L21/02 , C01B31/04 , H01L29/16
CPC分类号： H01L29/41733 , C01B32/19 , H01L21/02527 , H01L29/1606 , H01L29/778 , Y10S977/734
摘要： A semiconductor device includes a substrate, first plural contacts formed in the substrate, a graphene layer formed on the substrate and on the first plural contacts and second plural contacts formed on the graphene layer such that the graphene layer is formed between the first plural contacts and the second plural contacts.
摘要翻译： 半导体器件包括衬底，形成在衬底中的第一多个触点，形成在衬底上的石墨烯层和在第一多个触点上形成的第二多个触点和形成在石墨烯层上的第二多个触点，使得石墨烯层形成在第一多个触点和 第二个复数接触。
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