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1.发明申请STRUCTURE AND SYSTEM FOR SIMULTANEOUS SENSING A MAGNETIC FIELD AND MECHANICAL STRESS 有权用于同时感测磁场和机械应力的结构和系统公开(公告)号：US20170030980A1
公开(公告)日：2017-02-02
申请号：US14810665
申请日：2015-07-28
Applicant: Allegro Microsystems, LLC
Inventor： Steven Kosier , Gregory Delmain
CPC classification number: G01R33/0082 , G01R33/07
Abstract: A structure having collocated magnetic field sensing elements can be used to simultaneously determine magnetic field and mechanical stress. A primary magnetic field sensing element generates a primary signal responsive to a magnetic field and a secondary magnetic field sensing element generates a secondary signal responsive to mechanical stress. A system includes a stress compensation module to receive the primary and signals, and to compensate for mechanical stress in the primary signal.
Abstract translation: 具有并置的磁场感测元件的结构可以用于同时确定磁场和机械应力。 主磁场感测元件响应于磁场产生主信号，次级磁场感测元件产生响应于机械应力的次级信号。 系统包括用于接收主要信号和信号的应力补偿模块，并补偿主信号中的机械应力。
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公开(公告)号：US09312473B2
公开(公告)日：2016-04-12
申请号：US14041063
申请日：2013-09-30
Applicant: Allegro Microsystems, LLC
Inventor： Steven Kosier , Noel Hoilien
CPC classification number: H01L43/065 , G01R33/077 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: In one aspect, a vertical Hall effect sensor includes a semiconductor wafer having a first conductivity type and a plurality of semiconductive electrodes disposed on the semiconductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode, a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the sensing electrode and a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type.
Abstract translation: 一方面，垂直霍尔效应传感器包括具有第一导电类型的半导体晶片和设置在半导体晶片上的多个半导体电极。 多个半导体电极具有第一导电类型，并且包括源电极，第一感测电极和第二感测电极，其布置成使得源极在第一感测电极和感测电极之间，并且第一漏极和第二感测电极 漏电极，其布置成使得第一感测电极，第二感测电极和源电极在第一漏电极和第二漏电极之间。 垂直霍尔效应传感器还包括设置在半导体晶片上并与多个半导体电极交错的多个半导体指状物，半导体指状物具有第二导电类型。
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公开(公告)号：US09851417B2
公开(公告)日：2017-12-26
申请号：US14810665
申请日：2015-07-28
Applicant: Allegro Microsystems, LLC
Inventor： Steven Kosier , Gregory Delmain
CPC classification number: G01R33/0082 , G01R33/07
Abstract: A structure having collocated magnetic field sensing elements can be used to simultaneously determine magnetic field and mechanical stress. A primary magnetic field sensing element generates a primary signal responsive to a magnetic field and a secondary magnetic field sensing element generates a secondary signal responsive to mechanical stress. A system includes a stress compensation module to receive the primary and signals, and to compensate for mechanical stress in the primary signal.
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公开(公告)号：US20160190433A1
公开(公告)日：2016-06-30
申请号：US15060791
申请日：2016-03-04
Applicant: Allegro Microsystems, LLC
Inventor： Steven Kosier , Noel Hoilien
CPC classification number: H01L43/065 , G01R33/077 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: In one aspect, a vertical Hall effect sensor includes a semiconductor wafer having a first conductivity type and a plurality of semiconductive electrodes disposed on the semiconductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode, a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the sensing electrode and a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type.
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5.发明授权Anisotropic magnetoresistive (AMR) sensors and techniques for fabricating same 有权各向异性磁阻（AMR）传感器及其制造技术公开(公告)号：US09013838B1
公开(公告)日：2015-04-21
申请号：US14042955
申请日：2013-10-01
Applicant: Allegro Microsystems, LLC
Inventor： David G. Erie , Joseph Burkhardt , Steven Kosier
CPC classification number: G01R33/0052 , C23F1/12 , C23F1/14 , G01R33/096 , G11B5/33 , Y10T29/4902
Abstract: Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In at least one embodiment, an AMR sensor is provided that includes barber pole structures having upper and low metal layers that are formed of different materials. The metal material closer to the AMR element is formed of a material that can be etched using an etching process that does not attack the AMR material. In some other embodiments, AMR sensors having segmented AMR sensing elements are described.
Abstract translation: 描述了新型各向异性磁阻（AMR）传感器体系结构及其制造技术。 在至少一个实施例中，提供了AMR传感器，其包括具有由不同材料形成的上金属层和低金属层的理发杆结构。 靠近AMR元件的金属材料由可以使用不侵蚀AMR材料的蚀刻工艺进行蚀刻的材料形成。 在一些其他实施例中，描述了具有分段的AMR感测元件的AMR传感器。
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Patent Agency Ranking
公开(公告)号：US10746817B2
公开(公告)日：2020-08-18
申请号：US15807741
申请日：2017-11-09
Applicant: Allegro MicroSystems, LLC
Inventor： Steven Kosier , Gregory Delmain
Abstract: A structure having collocated magnetic field sensing elements can be used to simultaneously determine magnetic field and mechanical stress. A primary magnetic field sensing element generates a primary signal responsive to a magnetic field and a secondary magnetic field sensing element generates a secondary signal responsive to mechanical stress. A system includes a stress compensation module to receive the primary and signals, and to compensate for mechanical stress in the primary signal.
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7.发明申请ANISOTROPIC MAGNETORESISTIVE (AMR) SENSORS AND TECHNIQUES FOR FABRICATING SAME 有权各向异性磁传感器（AMR）传感器及其制造方法公开(公告)号：US20150091559A1
公开(公告)日：2015-04-02
申请号：US14042955
申请日：2013-10-01
Applicant: ALLEGRO MICROSYSTEMS, LLC
Inventor： David G. Erie , Joseph Burkhardt , Steven Kosier
CPC classification number: G01R33/0052 , C23F1/12 , C23F1/14 , G01R33/096 , G11B5/33 , Y10T29/4902
Abstract: Novel anisotropic magneto-resistive (AMR) sensor architectures and techniques for fabricating same are described. In at least one embodiment, an AMR sensor is provided that includes barber pole structures having upper and low metal layers that are formed of different materials. The metal material closer to the AMR element is formed of a material that can be etched using an etching process that does not attack the AMR material. In some other embodiments, AMR sensors having segmented AMR sensing elements are described.
Abstract translation: 描述了新型各向异性磁阻（AMR）传感器体系结构及其制造技术。 在至少一个实施例中，提供了AMR传感器，其包括具有由不同材料形成的上金属层和低金属层的理发杆结构。 靠近AMR元件的金属材料由可以使用不侵蚀AMR材料的蚀刻工艺进行蚀刻的材料形成。 在一些其他实施例中，描述了具有分段的AMR感测元件的AMR传感器。
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公开(公告)号：US20180321329A1
公开(公告)日：2018-11-08
申请号：US15807741
申请日：2017-11-09
Applicant: Allegro MicroSystems, LLC
Inventor： Steven Kosier , Gregory Delmain
CPC classification number: G01R33/0082 , G01R33/07
Abstract: A structure having collocated magnetic field sensing elements can be used to simultaneously determine magnetic field and mechanical stress. A primary magnetic field sensing element generates a primary signal responsive to a magnetic field and a secondary magnetic field sensing element generates a secondary signal responsive to mechanical stress. A system includes a stress compensation module to receive the primary and signals, and to compensate for mechanical stress in the primary signal.
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公开(公告)号：US09735345B2
公开(公告)日：2017-08-15
申请号：US15060791
申请日：2016-03-04
Applicant: Allegro Microsystems, LLC
Inventor： Steven Kosier , Noel Hoilien
CPC classification number: H01L43/065 , G01R33/077 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: In one aspect, a vertical Hall effect sensor includes a semiconductor wafer having a first conductivity type and a plurality of semiconductive electrodes disposed on the semiconductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode, a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the sensing electrode and a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type.
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公开(公告)号：US20150091112A1
公开(公告)日：2015-04-02
申请号：US14041063
申请日：2013-09-30
Applicant: Allegro Microsystems, LLC
Inventor： Steven Kosier , Noel Hoilien
CPC classification number: H01L43/065 , G01R33/077 , H01L27/22 , H01L43/04 , H01L43/14
Abstract: In one aspect, a vertical Hall effect sensor includes a semiconductor wafer having a first conductivity type and a plurality of semiconductive electrodes disposed on the semiconductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode, a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the sensing electrode and a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type.
Abstract translation: 一方面，垂直霍尔效应传感器包括具有第一导电类型的半导体晶片和设置在半导体晶片上的多个半导体电极。 多个半导体电极具有第一导电类型，并且包括源电极，第一感测电极和第二感测电极，其布置成使得源极在第一感测电极和感测电极之间，并且第一漏极和第二感测电极 漏电极，其布置成使得第一感测电极，第二感测电极和源电极在第一漏电极和第二漏电极之间。 垂直霍尔效应传感器还包括设置在半导体晶片上并与多个半导体电极交错的多个半导体指状物，半导体指状物具有第二导电类型。
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