-
1.发明授权公开(公告)号：US11693068B2
公开(公告)日：2023-07-04
申请号：US17357216
申请日：2021-06-24
Applicant: Alps Alpine Co., Ltd.
Inventor： Masamichi Saito , Fumihito Koike
CPC classification number: G01R33/093 , H01F10/3268
Abstract: An exchange-coupled film includes a antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being in contact with the pinned magnetic layer. The second PtMn layer preferably has a thickness of more than 0 Å and less than 60 Å, in some cases. The PtCr layer preferably has a thickness of 100 Å or more, in some cases. The antiferromagnetic layer preferably has a total thickness of 200 Å or less, in some cases.
-
公开(公告)号：US11476413B2
公开(公告)日：2022-10-18
申请号：US16909656
申请日：2020-06-23
Applicant: Alps Alpine Co., Ltd.
Inventor： Masamichi Saito , Fumihito Koike
Abstract: A tunnel magnetoresistance effect (TMR) device includes an exchange coupling film having a first ferromagnetic layer, which is at least a portion of a fixed magnetic layer, and an antiferromagnetic layer laminated on the first ferromagnetic layer. The ferromagnetic layer includes an X(Cr—Mn) layer containing one or two or more elements X selected from the group consisting of the platinum group elements and Ni, and also containing Mn and Cr. The X(Cr—Mn) layer has a first region relatively near the first ferromagnetic layer, and a second region relatively far away from the first ferromagnetic layer, and the content of Mn in the first region is higher than that in the second region.
-
3.发明申请公开(公告)号：US20210382122A1
公开(公告)日：2021-12-09
申请号：US17357216
申请日：2021-06-24
Applicant: Alps Alpine Co., Ltd.
Inventor： Masamichi Saito , Fumihito Koike
Abstract: An exchange-coupled film includes a antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer stacked together, the antiferromagnetic layer having a structure including an IrMn layer, a first PtMn layer, a PtCr layer, and a second PtMn layer stacked in that order, the IrMn layer being in contact with the pinned magnetic layer. The second PtMn layer preferably has a thickness of more than 0 Å and less than 60 Å, in some cases. The PtCr layer preferably has a thickness of 100 Å or more, in some cases. The antiferromagnetic layer preferably has a total thickness of 200 Å or less, in some cases.
-
公开(公告)号：US20200348375A1
公开(公告)日：2020-11-05
申请号：US16929812
申请日：2020-07-15
Applicant: Alps Alpine Co., Ltd.
Inventor： Masamichi Saito
Abstract: A magnetic detector includes a full-bridge circuit including magnetoresistive sensors on the same substrate. The magnetoresistive sensors include two magnetoresistive films and have different relationships between the fixed magnetization direction and the bias application direction. The fixed magnetization direction and the bias application direction are determined with three or more exchange coupling films including antiferromagnetic layers with different blocking temperatures. Thus, the magnetic detector has high resistance to a strong magnetic field, is easy to produce, and has a high degree of flexibility in production.
-
公开(公告)号：US20200318996A1
公开(公告)日：2020-10-08
申请号：US16909623
申请日：2020-06-23
Applicant: Alps Alpine Co., Ltd.
Inventor： Masamichi Saito , Fumihito Koike
Abstract: A position detection element includes an exchange coupling film having a large exchange coupling magnetic field and a position detection apparatus showing good detection accuracy in a high temperature environment. The position detection element includes an exchange coupling film composed of a fixed magnetic layer and an antiferromagnetic layer stacked on the fixed magnetic layer. The antiferromagnetic layer includes an X(Cr—Mn) layer containing X that is one or more elements selected from the group consisting of platinum group metals and Ni and containing Mn and Cr. The X(Cr—Mn) layer includes a PtMn layer as a first region relatively closer to the fixed magnetic layer and a PtCr layer as a second region relatively farther from the fixed magnetic layer. The content of Mn in the first region is higher than the content of Mn in the second region.
-
Patent Agency Ranking
公开(公告)号：US11428757B2
公开(公告)日：2022-08-30
申请号：US16816957
申请日：2020-03-12
Applicant: Alps Alpine Co., Ltd.
Inventor： Masamichi Saito , Hiroaki Endo , Fumihito Koike
Abstract: An exchange-coupling film having a large magnetic field (Hex) at which the magnetization direction of a pinned magnetic layer is reversed, thus exhibiting high stability under high-temperature conditions, and having excellent high-magnetic-field resistance includes an antiferromagnetic layer and a pinned magnetic layer in contact with the antiferromagnetic layer. The antiferromagnetic layer has an alternating multilayer structure of three or more layers, the layers including alternately stacked X1Cr and X2Mn layers, where X1 represents one or more elements selected from the group consisting of platinum group elements and Ni, and X2 represents one or more elements selected from the group consisting of platinum group elements and Ni and may be the same as or different from X1.
-
7.发明申请公开(公告)号：US20200211746A1
公开(公告)日：2020-07-02
申请号：US16816981
申请日：2020-03-12
Applicant: Alps Alpine Co., Ltd.
Inventor： Masamichi Saito , Fumihito Koike , Hiroaki Endo
Abstract: In an exchange coupling film that has a large magnetic field (Hex) in which the direction of magnetization of a fixed magnetic layer is reversed, high stability under high temperature conditions, and excellent strong-magnetic field resistance, an antiferromagnetic layer, a fixed magnetic layer, and a free magnetic layer are stacked, the antiferromagnetic layer is composed of a PtCr layer and an XMn layer (where X is Pt or Ir), the XMn layer is in contact with the fixed magnetic layer, and the fixed magnetic layer is made of iron, cobalt, an iron-cobalt alloy, or an iron-nickel alloy.
-
8.发明申请公开(公告)号：US20200319273A1
公开(公告)日：2020-10-08
申请号：US16909559
申请日：2020-06-23
Applicant: Alps Alpine Co., Ltd.
Inventor： Masamichi Saito
Abstract: A magnetic-field-applying bias film exhibiting resistance to a high magnetic field has an exchange-coupled film including a permanent magnet layer and an antiferromagnetic layer stacked on the permanent magnet layer. The antiferromagnetic layer includes an X(Cr—Mn) layer containing Cr, Mn, and one or two or more elements selected from the group consisting of platinum-group elements and Ni. The X(Cr—Mn) layer has a first region relatively near to the permanent magnet layer and a second region relatively distant from the permanent magnet layer. Mn content in the first region is higher than Mn content in the second region.
-
公开(公告)号：US20200161538A1
公开(公告)日：2020-05-21
申请号：US16748473
申请日：2020-01-21
Applicant: Alps Alpine Co., Ltd.
Inventor： Masamichi Saito , Hiroaki Endo , Fumihito Koike
Abstract: An exchange coupling film in which a magnetic field (Hex) at which the magnetization direction of a pinned magnetic layer is reversed is high, in which stability under high-temperature conditions is high, and which is excellent in strong-magnetic field resistance. The exchange coupling film includes an antiferromagnetic layer and a pinned magnetic layer including a ferromagnetic layer, the antiferromagnetic layer and the pinned magnetic layer being stacked together. The antiferromagnetic layer has a structure including a PtCr layer, a PtMn layer, and an IrMn layer stacked in this order. The IrMn layer is in contact with the pinned magnetic layer. The thickness of the PtMn layer is 12 Å or more, and the thickness of the IrMn layer is 6 Å. The sum of the thickness of the PtMn layer and the thickness of the IrMn layer is 20 Å or more.
-
10.发明授权公开(公告)号：US10650849B2
公开(公告)日：2020-05-12
申请号：US16271933
申请日：2019-02-11
Applicant: ALPS ALPINE CO., LTD.
Inventor： Masamichi Saito , Fumihito Koike , Hiroaki Endo
Abstract: An exchange-coupled film according to the present invention includes an antiferromagnetic layer, pinned magnetic layer, and free magnetic layer which are stacked. The antiferromagnetic layer is composed of a Pt—Cr sublayer and an X—Mn sublayer (where X is Pt or Ir). The X—Mn sublayer is in contact with the pinned magnetic layer. The Pt—Cr sublayer has a composition represented by the formula PtαCr100 at %-α (α is 44 at % to 58 at %) when the X—Mn sublayer is placed on the Pt—Cr sublayer or has a composition represented by the formula PtαCr100 at %-α (α is 44 at % to 57 at %) when the X—Mn sublayer is placed on the pinned magnetic layer.
-
-
-
-
-
-
-
-
-
Search Results
21
records
(took 0.016 seconds)
