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公开(公告)号：US09024516B2
公开(公告)日：2015-05-05
申请号：US14109297
申请日：2013-12-17
Applicant: Amazing Microelectronic Corp.
Inventor： Tung-Yang Chen , Ming-Dou Ker , Ryan Hsin-Chin Jiang
CPC classification number: H01J9/02 , H01J17/066
Abstract: A method for fabricating a semiconductor-based planar micro-tube discharger structure is provided, including the steps of forming on a substrate two patterned electrodes separated by a gap and at least one separating block arranged in the gap, forming an insulating layer over the patterned electrodes and the separating block, and filling the insulating layer into the gap. At least two discharge paths are formed. The method can fabricate a plurality of discharge paths in a semiconductor structure, the structure having very high reliability and reusability.
Abstract translation: 提供一种制造基于半导体的平面微管放电器结构的方法，包括以下步骤：在衬底上形成由间隙分开的两个图案化电极和布置在间隙中的至少一个分隔块，在图案上形成绝缘层 电极和分离块，并将绝缘层填充到间隙中。 形成至少两个排出路径。 该方法可以在半导体结构中制造多个放电路径，该结构具有非常高的可靠性和可再利用性。
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公开(公告)号：US09024354B2
公开(公告)日：2015-05-05
申请号：US13959882
申请日：2013-08-06
Applicant: Amazing Microelectronic Corp.
Inventor： Tung-Yang Chen , James Jeng-Jie Peng , Woei-Lin Wu , Ryan Hsin-Chin Jiang
IPC: H01L29/66 , H01L29/74 , H01L29/861
CPC classification number: H01L29/747 , H01L27/0262 , H01L29/7436 , H01L29/861
Abstract: A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.
Abstract translation: 公开了一种高效率的硅控整流装置，其包括围绕N型区域的P型区域。 第一P型重掺杂区域布置在N型区域中并与高压端子连接。 在N型区域中布置有多个第二N型重掺杂区域。 多个第二P型重掺杂区域比第一N型重掺杂区域更靠近第二N型重掺杂区域并且布置在P型区域中。 在P型区域中设置至少一个第三N型重掺杂区域，并与低电压端子连接。 或者或组合地，第二N型重掺杂区域和第二P型重掺杂区域分别布置在P型区域和N型区域中。
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公开(公告)号：US09153679B2
公开(公告)日：2015-10-06
申请号：US14662417
申请日：2015-03-19
Applicant: AMAZING MICROELECTRONIC CORP.
Inventor： Tung-Yang Chen , James Jeng-Jie Peng , Woei-Lin Wu , Ryan Hsin-Chin Jiang
IPC: H01L29/66 , H01L29/747 , H01L29/74 , H01L29/861 , H01L27/02
CPC classification number: H01L29/747 , H01L27/0262 , H01L29/7436 , H01L29/861
Abstract: A silicon-controlled rectification device with high efficiency is disclosed, which comprises a P-type region surrounding an N-type region. A first P-type heavily doped area is arranged in the N-type region and connected with a high-voltage terminal. A plurality of second N-type heavily doped areas is arranged in the N-type region. A plurality of second P-type heavily doped areas is closer to the second N-type heavily doped areas than the first N-type heavily doped area and arranged in the P-type region. At least one third N-type heavily doped area is arranged in the P-type region and connected with a low-voltage terminal. Alternatively or in combination, the second N-type heavily doped areas and the second P-type heavily doped areas are respectively arranged in the P-type region and the N-type region.
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