摘要:
A tool for analog and mixed signal circuits includes a unit enabling a user to identify one or more critical interconnect lines in a chip architecture and one or more selectable, predefined topologies for said critical interconnect lines. Each topology includes one or more signal wires and a current return path. A majority of the electric field lines are contained within the boundary of the topology. The invention also includes a method for designing analog and mixed signal (AMS) integrated circuits (IC), including defining a chip architecture and a floor plan, identifying one or more critical interconnect lines and selecting pre-designed transmission line topologies for the critical interconnect lines.
摘要:
A tool for analog and mixed signal circuits includes a unit enabling a user to identify one or more critical interconnect lines in a chip architecture and one or more selectable, predefined topologies for said critical interconnect lines. Each topology includes one or more signal wires and a current return path. A majority of the electric field lines are contained within the boundary of the topology. The invention also includes a method for designing analog and mixed signal (AMS) integrated circuits (IC), including defining a chip architecture and a floor plan, identifying one or more critical interconnect lines and selecting pre-designed transmission line topologies for the critical interconnect lines.
摘要:
An integrated circuit design kit including one or more circuit components topologies, and one or more critical interconnect lines topologies. The interconnect line topologies may be predefined. The kit may further include one or more circuit components models and one or more critical interconnect lines models.
摘要:
In a system 10 for designing an integrated circuit, a preliminary design of the integrated circuit is defined and critical interconnect lines in the preliminary design are identified. Further, any critical interconnect lines which are affected by crossing lines in the preliminary design are identified, and a transmission line model 35 is defined to represent each critical interconnect line. A layout design of the integrated circuit, comprising circuit components and parameters thereof, is then defined using the preliminary design and the transmission line model 35 for each critical interconnect line. Component parameters are then extracted from the layout design for simulation of the design using the extracted component parameters. During this design process, for each transmission line model 35 representing a critical interconnect line affected by a crossing line, an environment terminal 36 is provided. The environment terminal 36 comprises a connection to the model 35 via at least one circuit component representing the effect of the crossing line on the model. The environment terminal 36 is connected to the appropriate crossing line in the integrated circuit design, whereby crossing line effects are accommodated in the design process.
摘要:
In a system 10 for designing an integrated circuit, a preliminary design of the integrated circuit is defined and critical interconnect lines in the preliminary design are identified. Further, any critical interconnect lines which are affected by crossing lines in the preliminary design are identified, and a transmission line model 35 is defined to represent each critical interconnect line. A layout design of the integrated circuit, comprising circuit components and parameters thereof, is then defined using the preliminary design and the transmission line model 35 for each critical interconnect line. Component parameters are then extracted from the layout design for simulation of the design using the extracted component parameters. During this design process, for each transmission line model 35 representing a critical interconnect line affected by a crossing line, an environment terminal 36 is provided. The environment terminal 36 comprises a connection to the model 35 via at least one circuit component representing the effect of the crossing line on the model. The environment terminal 36 is connected to the appropriate crossing line in the integrated circuit design, whereby crossing line effects are accommodated in the design process.
摘要:
A method of modeling capacitance for a structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate. In particular, the structure may be on-chip coplanar transmission lines over a conductive substrate operated at very high frequencies, such that the substrate behaves as a perfect dielectric. It is assumed that the surrounding dielectric material is a first dielectric with a first permittivity (ε1) and the substrate is a second dielectric with a second permittivity (ε2). The method models the capacitance (C1) for values of the first and second permittivity (ε1, ε2) based on known capacitance (C2) computed for a basis structure with the same first permittivity (ε1) and a different second permittivity (ε2). Extrapolation or interpolation formulae are suggested to model the sought capacitance (C1) through one or more known capacitances (C2).
摘要:
Methods, systems and apparatus for modeling capacitance for a structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate. In particular, the structure may be on-chip coplanar transmission lines over a conductive substrate operated at very high frequencies, such that the substrate behaves as a perfect dielectric. It is assumed that the surrounding dielectric material is a first dielectric with a first permittivity (e1) and the substrate is a second dielectric with a second permittivity (e2). A method models the capacitance (C1) for values of the first and second permittivity (e1, e2) based on known capacitance (C2) computed for a basis structure with the same first permittivity (e1) and a different second permittivity (e2). Extrapolation or interpolation formulae are suggested to model the sought capacitance (C1) through one or more known capacitances (C2).
摘要:
A method and system for design and modeling of transmission lines are provided. The method includes providing a set of models of core structures (211) of transmission line cells and expanding each of the models of core structures (211) to include different neighboring elements. The parameter characteristics of the expanded core structures (214a-214c) are compared to determine a model having a minimal sufficiently closed neighborhood environment. A closed neighborhood environment complies with design rules to ensure desired transmission line behavior in a real design environment. A model having a closed neighborhood environment can be used as a stand-alone model of the core structure describing the transmission line behavior in the actual design environment.
摘要:
A method of modeling capacitance for a structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate. In particular, the structure may be on-chip coplanar transmission lines over a conductive substrate operated at very high frequencies, such that the substrate behaves as a perfect dielectric. It is assumed that the surrounding dielectric material is a first dielectric with a first permittivity (ε1) and the substrate is a second dielectric with a second permittivity (ε2). The method models the capacitance (C1) for values of the first and second permittivity (ε1, ε2) based on known capacitance (C2) computed for a basis structure with the same first permittivity (ε1) and a different second permittivity (ε2). Extrapolation or interpolation formulae are suggested to model the sought capacitance (C1) through one or more known capacitances (C2).
摘要:
A system and method for design and modeling of vertical interconnects for 3DI applications. A design and modeling methodology of vertical interconnects for 3DI applications includes models that represent the frequency dependent behavior of vertical interconnects by means of multi-segment RLC scalable filter networks. The networks allow for accuracy versus computation efficiency tradeoffs, while maintaining correct asymptotic behavior at both high and low frequency limits. In the framework of the model it is shown that a major effect is pronounced frequency dependent silicon substrate induced dispersion and loss effects, which is considered in through silicon via (TSV) parallel Y-element parameters, including capacitance and conductance.