Capacitance modeling
    1.
    发明授权
    Capacitance modeling 有权
    电容建模

    公开(公告)号:US08041546B2

    公开(公告)日:2011-10-18

    申请号:US12137257

    申请日:2008-06-11

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5036

    摘要: A method of modeling capacitance for a structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate. In particular, the structure may be on-chip coplanar transmission lines over a conductive substrate operated at very high frequencies, such that the substrate behaves as a perfect dielectric. It is assumed that the surrounding dielectric material is a first dielectric with a first permittivity (ε1) and the substrate is a second dielectric with a second permittivity (ε2). The method models the capacitance (C1) for values of the first and second permittivity (ε1, ε2) based on known capacitance (C2) computed for a basis structure with the same first permittivity (ε1) and a different second permittivity (ε2). Extrapolation or interpolation formulae are suggested to model the sought capacitance (C1) through one or more known capacitances (C2).

    摘要翻译: 一种用于结构建模的方法,该结构包括由电介质材料包围并由衬底支撑的一对长导体。 特别地,该结构可以是在以非常高的频率操作的导电衬底上的片上共面传输线,使得衬底表现为完美的电介质。 假设周围的电介质材料是具有第一介电常数(第一介电常数)的第一电介质,并且衬底是具有第二介电常数的第二电介质(& 2)。 该方法基于针对具有相同的第一介电常数(&egr.1)的基础结构计算的已知电容(C2)和不同的第一介电常数(&egr.1)的基础结构计算第一和第二介电常数(&egr; 1,&egr; 2) 第二介电常数(&egr。2)。 建议外插或内插公式通过一个或多个已知电容(C2)建模寻找电容(C1)。

    System and method of modelling capacitance of on-chip coplanar transmission line structures over a substrate
    2.
    发明授权
    System and method of modelling capacitance of on-chip coplanar transmission line structures over a substrate 有权
    在衬底上对片上共面传输线结构的电容建模的系统和方法

    公开(公告)号:US07392490B2

    公开(公告)日:2008-06-24

    申请号:US11123806

    申请日:2005-05-06

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5036

    摘要: Methods, systems and apparatus for modeling capacitance for a structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate. In particular, the structure may be on-chip coplanar transmission lines over a conductive substrate operated at very high frequencies, such that the substrate behaves as a perfect dielectric. It is assumed that the surrounding dielectric material is a first dielectric with a first permittivity (e1) and the substrate is a second dielectric with a second permittivity (e2). A method models the capacitance (C1) for values of the first and second permittivity (e1, e2) based on known capacitance (C2) computed for a basis structure with the same first permittivity (e1) and a different second permittivity (e2). Extrapolation or interpolation formulae are suggested to model the sought capacitance (C1) through one or more known capacitances (C2).

    摘要翻译: 用于建模电容的方法,系统和装置,包括由电介质材料围绕并由衬底支撑的一对长导体。 特别地,该结构可以是在以非常高的频率操作的导电衬底上的片上共面传输线,使得衬底表现为完美的电介质。 假设周围的电介质材料是具有第一介电常数(ε1)的第一电介质,并且衬底是具有第二介电常数(e 2 N 2)的第二电介质。 一种方法根据已知的电容对第一和第二介电常数(e 1 1,e 2 2)的值进行建模(C 1> 1 ) 对于具有相同的第一介电常数(e <1> 1)和不同的第二介电常数(e 2> 2)的基础结构计算得到。 建议外推或内插公式,以通过一个或多个已知电容(C 2> 2)来建模所寻找的电容(C 1> 1)。

    Interconnect-aware integrated circuit design
    3.
    发明授权
    Interconnect-aware integrated circuit design 失效
    互连式集成电路设计

    公开(公告)号:US07080340B2

    公开(公告)日:2006-07-18

    申请号:US10723752

    申请日:2003-11-26

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5036

    摘要: In a system 10 for designing an integrated circuit, a preliminary design of the integrated circuit is defined and critical interconnect lines in the preliminary design are identified. Further, any critical interconnect lines which are affected by crossing lines in the preliminary design are identified, and a transmission line model 35 is defined to represent each critical interconnect line. A layout design of the integrated circuit, comprising circuit components and parameters thereof, is then defined using the preliminary design and the transmission line model 35 for each critical interconnect line. Component parameters are then extracted from the layout design for simulation of the design using the extracted component parameters. During this design process, for each transmission line model 35 representing a critical interconnect line affected by a crossing line, an environment terminal 36 is provided. The environment terminal 36 comprises a connection to the model 35 via at least one circuit component representing the effect of the crossing line on the model. The environment terminal 36 is connected to the appropriate crossing line in the integrated circuit design, whereby crossing line effects are accommodated in the design process.

    摘要翻译: 在用于设计集成电路的系统10中,定义了集成电路的初步设计,并且识别了初步设计中的关键互连线。 此外,识别在初步设计中受交叉线影响的任何关键互连线,并且传输线模型35被定义为表示每个关键互连线。 然后使用用于每个关键互连线的初步设计和传输线模型35来定义包括电路部件及其参数的集成电路的布局设计。 然后从布局设计中提取组件参数,以使用提取的组件参数进行设计的仿真。 在该设计过程中,对于表示受交叉线影响的关键互连线的每个传输线模型35,提供环境终端36。 环境终端36包括通过表示模型上的交叉线的影响的至少一个电路组件到模型35的连接。 环境端子36在集成电路设计中连接到适当的交叉线,由此在设计过程中容纳交叉线效应。

    Coil inductor for on-chip or on-chip stack
    4.
    发明授权
    Coil inductor for on-chip or on-chip stack 有权
    用于片上或片上堆叠的线圈电感

    公开(公告)号:US09105627B2

    公开(公告)日:2015-08-11

    申请号:US13289071

    申请日:2011-11-04

    摘要: A coil inductor and buck voltage regulator incorporating the coil inductor are provided which can be fabricated on a microelectronic element such as a semiconductor chip, or on an interconnection element such as a semiconductor, glass or ceramic interposer element. When energized, the coil inductor has magnetic flux extending in a direction parallel to first and second opposed surfaces of the microelectronic or interconnection element, and whose peak magnetic flux is disposed between the first and second surfaces. In one example, the coil inductor can be formed by first conductive lines extending along the first surface of the microelectronic or interconnection element, second conductive lines extending along the second surface of the microelectronic or interconnection element, and a plurality of conductive vias, e.g., through silicon vias, extending in direction of a thickness of the microelectronic or interconnection element. A method of making the coil inductor is also provided.

    摘要翻译: 提供了一种结合线圈电感器的线圈电感器和降压稳压器,其可以制造在诸如半导体芯片的微电子元件上,或者在诸如半导体,玻璃或陶瓷插入元件的互连元件上。 当通电时,线圈电感器具有沿平行于微电子或互连元件的第一和第二相对表面的方向延伸的磁通量,并且其峰值磁通量设置在第一和第二表面之间。 在一个示例中,线圈电感器可以由沿着微电子或互连元件的第一表面延伸的第一导线形成,沿着微电子或互连元件的第二表面延伸的第二导电线,以及多个导电通孔, 通过硅通孔,在微电子或互连元件的厚度方向上延伸。 还提供了制造线圈电感器的方法。

    Method and system for design and modeling of transmission lines
    5.
    发明授权
    Method and system for design and modeling of transmission lines 有权
    传输线设计与建模方法与系统

    公开(公告)号:US08271913B2

    公开(公告)日:2012-09-18

    申请号:US12564061

    申请日:2009-09-22

    IPC分类号: G06F17/50

    摘要: A method and system for design and modeling of transmission lines are provided. The method includes providing a set of models of core structures (211) of transmission line cells and expanding each of the models of core structures (211) to include different neighboring elements. The parameter characteristics of the expanded core structures (214a-214c) are compared to determine a model having a minimal sufficiently closed neighborhood environment. A closed neighborhood environment complies with design rules to ensure desired transmission line behavior in a real design environment. A model having a closed neighborhood environment can be used as a stand-alone model of the core structure describing the transmission line behavior in the actual design environment.

    摘要翻译: 提供了传输线设计和建模的方法和系统。 该方法包括提供传输线路单元的核心结构(211)的一组模型,并且扩展核心结构(211)的每个模型以包括不同的相邻元件。 将扩展的核心结构(214a-214c)的参数特性进行比较,以确定具有最小充分闭合的邻近环境的模型。 封闭的邻里环境符合设计规则,以确保实际设计环境中所需的传输线路行为。 具有封闭邻域环境的模型可以用作描述实际设计环境中的传输线行为的核心结构的独立模型。

    CAPACITANCE MODELING
    6.
    发明申请
    CAPACITANCE MODELING 有权
    电容建模

    公开(公告)号:US20080243453A1

    公开(公告)日:2008-10-02

    申请号:US12137257

    申请日:2008-06-11

    IPC分类号: G06G7/48

    CPC分类号: G06F17/5036

    摘要: A method of modeling capacitance for a structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate. In particular, the structure may be on-chip coplanar transmission lines over a conductive substrate operated at very high frequencies, such that the substrate behaves as a perfect dielectric. It is assumed that the surrounding dielectric material is a first dielectric with a first permittivity (ε1) and the substrate is a second dielectric with a second permittivity (ε2). The method models the capacitance (C1) for values of the first and second permittivity (ε1, ε2) based on known capacitance (C2) computed for a basis structure with the same first permittivity (ε1) and a different second permittivity (ε2). Extrapolation or interpolation formulae are suggested to model the sought capacitance (C1) through one or more known capacitances (C2).

    摘要翻译: 一种用于结构建模的方法,该结构包括由电介质材料包围并由衬底支撑的一对长导体。 特别地,该结构可以是在以非常高的频率操作的导电衬底上的片上共面传输线,使得衬底表现为完美的电介质。 假设周围的电介质材料是具有第一介电常数(ε1> 1)的第一电介质,并且衬底是具有第二介电常数(ε2/2)的第二电介质。 该方法基于已知的电容(第一和第二介电常数(ε1,ε2,ε2))对第一和第二介电常数(ε1,ε2,ε2 2)的值建模电容(C 1 SUB) 对于具有相同的第一介电常数(ε1> 1)和不同的第二介电常数(ε2> 2)的基础结构计算出的C 2 C 2 N 2)。 建议外推或内插公式,以通过一个或多个已知电容(C 2> 2)来建模所寻找的电容(C 1> 1)。

    COIL INDUCTOR FOR ON-CHIP OR ON-CHIP STACK
    7.
    发明申请
    COIL INDUCTOR FOR ON-CHIP OR ON-CHIP STACK 有权
    用于片上或片上堆叠的线圈电感器

    公开(公告)号:US20130113448A1

    公开(公告)日:2013-05-09

    申请号:US13289071

    申请日:2011-11-04

    摘要: A coil inductor and buck voltage regulator incorporating the coil inductor are provided which can be fabricated on a microelectronic element such as a semiconductor chip, or on an interconnection element such as a semiconductor, glass or ceramic interposer element. When energized, the coil inductor has magnetic flux extending in a direction parallel to first and second opposed surfaces of the microelectronic or interconnection element, and whose peak magnetic flux is disposed between the first and second surfaces. In one example, the coil inductor can be formed by first conductive lines extending along the first surface of the microelectronic or interconnection element, second conductive lines extending along the second surface of the microelectronic or interconnection element, and a plurality of conductive vias, e.g., through silicon vias, extending in direction of a thickness of the microelectronic or interconnection element. A method of making the coil inductor is also provided.

    摘要翻译: 提供了一种结合线圈电感器的线圈电感器和降压稳压器,其可以制造在诸如半导体芯片的微电子元件上,或者在诸如半导体,玻璃或陶瓷插入元件的互连元件上。 当通电时,线圈电感器具有沿平行于微电子或互连元件的第一和第二相对表面的方向延伸的磁通量,并且其峰值磁通量设置在第一和第二表面之间。 在一个示例中,线圈电感器可以由沿着微电子或互连元件的第一表面延伸的第一导线形成,沿着微电子或互连元件的第二表面延伸的第二导电线,以及多个导电通孔, 通过硅通孔,在微电子或互连元件的厚度方向上延伸。 还提供了制造线圈电感器的方法。

    Capacitance modeling
    8.
    发明授权
    Capacitance modeling 有权
    电容建模

    公开(公告)号:US08056043B2

    公开(公告)日:2011-11-08

    申请号:US12137277

    申请日:2008-06-11

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5036

    摘要: A method of modeling capacitance for a structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate. In particular, the structure may be on-chip coplanar transmission lines over a conductive substrate operated at very high frequencies, such that the substrate behaves as a perfect dielectric. It is assumed that the surrounding dielectric material is a first dielectric with a first permittivity (∈1) and the substrate is a second dielectric with a second permittivity (∈2). The method models the capacitance (C1) for values of the first and second permittivity (∈1, ∈2) based on known capacitance (C2) computed for a basis structure with the same first permittivity (∈1) and a different second permittivity (∈2). Extrapolation or interpolation formulae are suggested to model the sought capacitance (C1) through one or more known capacitances (C2).

    摘要翻译: 一种用于结构建模的方法,该结构包括由电介质材料包围并由衬底支撑的一对长导体。 特别地,该结构可以是在以非常高的频率操作的导电衬底上的片上共面传输线,使得衬底表现为完美的电介质。 假设周围的介电材料是具有第一介电常数(∈1)的第一介质,并且衬底是具有第二介电常数(∈2)的第二介质。 该方法基于为具有相同的第一介电常数(∈1)和不同的第二介电常数(∈1)的基础结构计算的已知电容(C2)来建模第一和第二介电常数(∈1,∈2)的电容(C1) ∈2)。 建议外插或内插公式通过一个或多个已知电容(C2)建模寻找电容(C1)。

    LAYOUT DETERMINING FOR WIDE WIRE ON-CHIP INTERCONNECT LINES
    9.
    发明申请
    LAYOUT DETERMINING FOR WIDE WIRE ON-CHIP INTERCONNECT LINES 有权
    布线确定宽线芯片互连线

    公开(公告)号:US20110179392A1

    公开(公告)日:2011-07-21

    申请号:US13069411

    申请日:2011-03-23

    IPC分类号: G06F17/50

    摘要: A method for determining the layout of an interconnect line is provided including: providing a required width for the interconnect line; determining a layout of the interconnect line including slotting the interconnect line to provide two or more fingers extending along the interconnect line with an elongate slot separating adjacent fingers; and determining a number of elongate apertures to be arranged across the width of the interconnect line by comparing the required width with a maximal width for a solid metal feature, and a minimal elongate aperture width. The two or more fingers and elongate slot may be of constant width and equally spaced across the interconnect line width. The method may include selecting the number of fingers and the width of the slots to optimize the layout for a given layer technology.

    摘要翻译: 提供了一种用于确定互连线的布局的方法,包括:为所述互连线提供所需的宽度; 确定所述互连线的布局,包括切开所述互连线以提供沿着所述互连线延伸的两个或更多个手指,所述两个或更多个指状物与分隔相邻手指的细长狭槽; 以及通过将所需宽度与固体金属特征的最大宽度进行比较,以及最小的细长孔宽度来确定要布置在互连线的宽度上的多个细长孔。 两个或更多个手指和细长槽可以具有恒定的宽度并且跨越互连线宽度等间隔。 该方法可以包括选择手指的数量和槽的宽度以优化给定层技术的布局。