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公开(公告)号：US5155352A
公开(公告)日：1992-10-13
申请号：US797595
申请日：1991-11-25
CPC分类号： H01T2/00
摘要： The combination of a photoconductive switch coupled to an energy storage ice wherein the switch is comprised of photoconductive semiconductor material while the energy storage device comprises a radio transmission line including a different material, i.e. a dielectric storage medium. A photoconductive semiconductor gallium arsenide switch is embedded in a circular disc of dielectric material with upper and lower layers of continuous radial metallization configured in a circular pattern located thereon. The upper layer of metallization includes an apertured grid adjacent one surface of the switch, while the outer conductor of a coaxial output signal line is connected to the metallization layer on the opposite side with the inner conductor thereof passing through the dielectric layer to the undersurface of the semiconductor switch. A variation comprises the upper and lower metallization layers being formed in the shape of a plurality of discrete straight line segments or strips which extend radially outward from the center and thus forms a quasi-radial structure.
摘要翻译： 耦合到能量存储装置的光电导开关的组合，其中开关由光电导半导体材料组成，而能量存储装置包括包括不同材料的无线电传输线，即电介质存储介质。 光电导半导体砷化镓开关嵌入在电介质材料的圆盘中，其中连续径向金属化的上层和下层构造成位于其上的圆形图案。 金属化的上层包括邻近开关的一个表面的有孔网格，而同轴输出信号线的外部导体与其内部导体的相对侧的金属化层连接到穿过电介质层的下表面 半导体开关。 一种变型包括上部和下部金属化层形成为从中心径向向外延伸并由此形成准径向结构的多个离散的直线段或条带的形状。
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2.发明授权
公开(公告)号：US5262657A
公开(公告)日：1993-11-16
申请号：US825365
申请日：1992-01-24
CPC分类号： G02B6/4295 , H01L31/08
摘要： A device for generating pulses of radio frequency energy in response to pulses of laser light in which a circular wafer of GaAs has metallized annular layers ohmically bonded to the wafer by epitaxial GaAs layers, and an epitaxial layer of AlGaAs in the center of one of the annular epitaxial layers through which laser light is to be directed, there being a plurality of apertures in the metallized layer in contact with the AlGaAs epitaxial layer. In addition, an AlGaAs epitaxial layer may be formed opposite the first AlGaAs layer and an optical fiber is brought into contact with it so that laser light can be introduced at both sides of the wafer.
摘要翻译： 一种用于响应于激光脉冲产生射频能量脉冲的装置，其中GaAs的圆形晶片通过外延GaAs层金属化地与晶片方向结合的环形层，以及AlGaAs的外延层在其中一个的中心 激光将要被引导的环形外延层，在与AlGaAs外延层接触的金属化层中存在多个孔。 此外，AlGaAs外延层可以形成为与第一AlGaAs层相对，并且使光纤与其接触，使得可以在晶片的两侧引入激光。
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3.发明授权Ultra-wideband high power photon triggered frequency independent radiator with equiangular spiral antenna 失效超宽带高功率光子触发频率独立散热器等角螺旋天线
公开(公告)号：US5351063A
公开(公告)日：1994-09-27
申请号：US64525
申请日：1993-05-19
申请人： Anderson H. Kim , Leo D. DiDomenico , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans
发明人： Anderson H. Kim , Leo D. DiDomenico , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans
摘要： A photoconductive switch coupled to an energy storage device wherein the tch is comprised of photoconductive semiconductor material while the energy storage device comprises two spiral metalized arms that make up a spiral antenna. The photoconductive switch is electrically connected to the storage device to facilitate fast discharge of the stored energy through a load. A variation comprises a storage device comprising two separate pieces of substrate material each having a spiral metalized arm. The separate pieces being connected by highly dielectric material to form a spiral antenna ultra wideband radiator.
摘要翻译： 耦合到能量存储装置的感光开关，其中开关由光电导半导体材料组成，而能量存储装置包括构成螺旋天线的两个螺旋金属化臂。 光电开关电连接到存储装置，以便于通过负载快速放电存储的能量。 一种变型包括一个存储装置，该存储装置包括两个单独的基片材料片，每片都有一个螺旋金属化的臂。 这些单独的部件通过高介电材料连接以形成螺旋天线超宽带辐射器。
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公开(公告)号：US5319218A
公开(公告)日：1994-06-07
申请号：US61612
申请日：1993-05-06
摘要： A photoconductive ultra-wideband impulse generating device utilizing pulseharpening techniques to further increase its radiation frequency well above the gigahertz range while also substantially improving radiation efficiency. Such pulse sharpening provides for a radiator having a wider range of applications.
摘要翻译： 利用脉冲锐化技术的光导超宽带脉冲产生装置进一步增加其辐射频率远高于千兆赫兹范围，同时也显着提高辐射效率。 这种脉冲锐化提供了具有更广泛应用范围的散热器。
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公开(公告)号：US5313056A
公开(公告)日：1994-05-17
申请号：US103494
申请日：1993-08-06
申请人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans , Lawrence E. Kingsley
发明人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Robert J. Youmans , Lawrence E. Kingsley
CPC分类号： H03K5/12 , G01S7/282 , G01S13/0209 , G01S13/24
摘要： An electronically controlled frequency agile impulse source utilizing pulse sharpening techniques to increase its versatility in radiating impulse energy at a variety of center frequencies and bandwidths in the megahertz to the gigahertz range. Such pulse sharpening provides for a radiator having a wider range of applications.
摘要翻译： 使用脉冲锐化技术的电子控制频率敏捷脉冲源，以增加其在各种中心频率和兆赫兹到千兆赫兹范围内的带宽辐射脉冲能量的通用性。 这种脉冲锐化提供了具有更广泛应用范围的散热器。
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6.发明授权High power photon triggered ultra-wideband RF radiator with opposite apertures 失效大功率光子触发超宽带射频辐射器具有相对的孔径
公开(公告)号：US5283584A
公开(公告)日：1994-02-01
申请号：US61614
申请日：1993-05-06
CPC分类号： H03K3/57 , G01S13/0209 , H03K17/78
摘要： A photoconductive switch coupled to an energy storage device wherein the tch is comprised of photoconductive semiconductor material while the energy storage device comprises two discrete dielectric mediums. Each medium having a conductive electrode on the top and bottom surfaces to essentially form parallel capacitors wherein the parallel capacitors are separated by a predetermined gap distance. A photoconductive switch electrically connected to each medium such that the switches are located on the opposite sides of their respective mediums. The predetermined gap distance (between the electrodes) and the photoconductive switches (on opposite sides of the storage devices) provide suppression of surface flashover between very high voltage, charged electrodes. Such flashover suppression allowing for very high power pulse generation.
摘要翻译： 耦合到能量存储装置的光电导开关，其中所述开关由光导半导体材料构成，而所述能量存储装置包括两个分立的电介质介质。 每个介质在顶表面和底表面上具有导电电极，以基本上形成并联电容器，其中并联电容器被隔开预定的间隙距离。 电连接到每个介质的光导开关，使得开关位于其各自介质的相对侧上。 预定的间隙距离（电极之间）和光电导开关（在存储装置的相对侧）提供了抑制非常高电压的充电电极之间的表面闪络。 这种闪络抑制允许非常高的功率脉冲产生。
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公开(公告)号：US5177486A
公开(公告)日：1993-01-05
申请号：US797594
申请日：1991-11-25
申请人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Thomas E. Koscica , Robert J. Youmans
发明人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Thomas E. Koscica , Robert J. Youmans
CPC分类号： G01S7/282 , H01Q3/2676 , H03K17/78 , H03K3/57 , G01S13/0209
摘要： A high voltage sub-nanosecond pulser and radiator including a radial transsion line consisting of a dielectric member sandwiched between two patterned layers of metallization, one of which comprises a plurality of radiating elements. A photoconductive semiconductor gallium arsenide switch is embedded in the dielectric member which has a constant thickness. The other layer of metallization includes an apertured grid adjacent one surface of the switch for application of an energization pulse of laser light.
摘要翻译： 一种高电压亚纳秒脉冲发生器和散热器，其包括由夹在两个图案化金属化层之间的电介质构成的径向传输线，其中一个包括多个辐射元件。 光电导半导体砷化镓开关被嵌入到具有恒定厚度的电介质构件中。 另一层金属化包括邻近开关的一个表面的有孔栅格，用于施加激光的通电脉冲。
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8.发明授权Photon-triggered RF radiator having discrete energy storage and energy radiation sections 失效具有离散能量存储和能量辐射部分的光子触发RF辐射器
公开(公告)号：US5491490A
公开(公告)日：1996-02-13
申请号：US344801
申请日：1994-11-23
申请人： Anderson H. Kim , Robert J. Youmans , Stephen E. Saddow , Louis J. Jasper, Jr. , Maurice Weiner
发明人： Anderson H. Kim , Robert J. Youmans , Stephen E. Saddow , Louis J. Jasper, Jr. , Maurice Weiner
摘要： A photon triggered RF radiator having separate sections to perform the eny storage and the energy radiation functions. The energy storage function is performed by at least one charging electrode positioned on the upper surface of a photoconductive dielectric substrate, whereas the energy radiation function is performed by a charging electrode positioned adjacent to the charging electrode on the upper surface of the substrate. The charging electrode and the radiating electrode are separated by a predetermined gap distance that is large enough to insure there is no surface flashover between the electrodes and small enough to insure the efficiency of energy discharge from the charging pad to the spiral antenna is maximized.
摘要翻译： 具有独立部分以执行能量存储和能量辐射功能的光子触发RF辐射器。 能量存储功能由位于光电导介质基板的上表面上的至少一个充电电极执行，而能量辐射功能由位于基板上表面上与充电电极相邻的充电电极执行。 充电电极和辐射电极分开一个足够大的预定间隙距离，以确保电极之间没有表面闪络，并且足够小以确保从充电垫到螺旋天线的能量放电的效率最大化。
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9.依法登记的发明Optically activated multi-frequency high power RF generation utilizing a wafer-scale Si-GaAs substrate 失效采用晶圆级Si-GaAs衬底的光纤激光多频高功率射频发生器
公开(公告)号：USH1443H
公开(公告)日：1995-06-06
申请号：US822453
申请日：1992-01-17
申请人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Thomas E. Koscica , Robert J. Youmans
发明人： Anderson H. Kim , Maurice Weiner , Louis J. Jasper, Jr. , Thomas E. Koscica , Robert J. Youmans
CPC分类号： H01Q3/2676
摘要： A device for radiating pulses of radio frequency energy in response to pulses of laser light in which a metal layer is ohmically bonded to one side of a substrate of semiconductor material and an antenna is ohmically bonded to the other side of the substrate, there being at least one aperture in the metal layer for permitting laser light to reach the disk.
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10.发明授权
公开(公告)号：US5280168A
公开(公告)日：1994-01-18
申请号：US797593
申请日：1991-11-25
摘要： The combination of a photoconductive switch coupled to an energy storage ice wherein the switch is comprised of photoconductive semiconductor switch while the energy storage device comprises a tapered radio transmission line. A photoconductive semiconductor gallium arsenide switch is embedded in a circular disc of dielectric material having a thickness dimension which reduces linearly outward from the center, with upper and lower layers of continuous radial metallization configured in a circular pattern located thereon. The upper layer of metallization includes an apertured grid adjacent one surface of the switch, while the outer conductor of a coaxial output signal line is connected to the metallization layer on the opposite side with the inner conductor thereof passing through the dielectric layer to the undersurface of the semiconductor switch.
摘要翻译： 耦合到能量存储装置的光电开关的组合，其中开关由光电导半导体开关构成，而能量存储装置包括锥形无线电传输线。 光电导半导体砷化镓开关嵌入电介质材料的圆盘中，其具有从中心线性向外减小的厚度尺寸，其中连续径向金属化的上层和下层构造成位于其上的圆形图案。 金属化的上层包括邻近开关的一个表面的有孔网格，而同轴输出信号线的外部导体与其内部导体的相对侧的金属化层连接到穿过电介质层的下表面 半导体开关。
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