Apparatus and method for use of optical system with a plasma processing system
    2.
    发明授权
    Apparatus and method for use of optical system with a plasma processing system 失效
    使用等离子体处理系统的光学系统的装置和方法

    公开(公告)号:US07591923B2

    公开(公告)日:2009-09-22

    申请号:US11082223

    申请日:2005-03-17

    IPC分类号: G01L21/30

    CPC分类号: H01J37/32935 H01J37/32972

    摘要: A plasma processing system and method for operating an optical system in conjunction with a plasma processing system are provided. The plasma processing system includes an optical system in communication with a plasma processing chamber of the plasma processing system. The optical system has a window and is constructed and arranged to detect a plasma process condition through the window and a transmission condition of the window. The method includes detecting an optical emission from the plasma processing region and monitoring contamination of a window provided by the optical system.

    摘要翻译: 提供了一种与等离子体处理系统一起操作光学系统的等离子体处理系统和方法。 等离子体处理系统包括与等离子体处理系统的等离子体处理室连通的光学系统。 光学系统具有窗口,并被构造和布置成通过窗口和窗口的传输条件来检测等离子体处理条件。 该方法包括检测来自等离子体处理区域的光发射并监测由光学系统提供的窗口的污染。

    Method and system for monitoring RF impedance to determine conditions of a wafer on an electrostatic chuck
    3.
    发明授权
    Method and system for monitoring RF impedance to determine conditions of a wafer on an electrostatic chuck 失效
    用于监测RF阻抗以确定静电卡盘上的晶片状况的方法和系统

    公开(公告)号:US07208067B2

    公开(公告)日:2007-04-24

    申请号:US10807439

    申请日:2004-03-24

    申请人: Andrej S Mitrovic

    发明人: Andrej S Mitrovic

    IPC分类号: H01L21/00 C23C16/00 C23C14/00

    摘要: A method and system for monitoring and/or controlling the conditions of a wafer on an electrostatic chuck during plasma processing. The method and system include utilizing backflow gas pressure and DC clamping voltage as control variables to adjust the wafer temperature based upon impedance measurements determined by RF sensors located in the electrostatic chuck RF feed line. The method and system further include utilizing the clamping status of the wafer on the electrostatic chuck to monitor impedance during the plasma process.

    摘要翻译: 一种用于在等离子体处理期间监测和/或控制静电卡盘上的晶片的状态的方法和系统。 该方法和系统包括利用回流气体压力和直流钳位电压作为控制变量,以基于位于静电吸盘RF馈送线中的RF传感器确定的阻抗测量来调整晶片温度。 该方法和系统还包括利用静电卡盘上的晶片的夹紧状态来监测等离子体处理期间的阻抗。