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    ELECTRON BIAS CONTROL SIGNALS FOR ELECTRON ENHANCED MATERIAL PROCESSING
    1.
    发明公开
    ELECTRON BIAS CONTROL SIGNALS FOR ELECTRON ENHANCED MATERIAL PROCESSING 审中-公开

    公开(公告)号：US20240321561A1

    公开(公告)日：2024-09-26

    申请号：US18672789

    申请日：2024-05-23

    申请人： VELVETCH LLC

    发明人： Stewart Francis Sando ,  Samir John Anz ,  David Irwin Margolese ,  William Andrew Goddard

    IPC分类号： H01J37/32 ,  H05H1/54

    CPC分类号： H01J37/32697 ,  H01J37/32027 ,  H05H1/54

    摘要： Systems and methods for material processing using wafer scale waves of precisely controlled electrons in a DC plasma is presented. A surface floating potential of a substrate placed atop a stage in a positive column of the DC plasma is adjusted and maintained to a reference potential. A periodic biasing signal referenced to the reference potential is capacitively coupled to the stage to control a surface potential at the substrate according to: an active phase for provision of kinetic energy to free electrons in the DC plasma for activation of targeted bonds at the surface of the substrate; a neutralization phase for repelling of the free electrons from the surface of the substrate; and an initialization phase for restoring an initial condition of the surface floating potential.

    PLASMA INJECTION AND CONFINEMENT SYSTEMS AND METHODS
    4.
    发明公开
    PLASMA INJECTION AND CONFINEMENT SYSTEMS AND METHODS 审中-公开

    公开(公告)号：US20240079151A1

    公开(公告)日：2024-03-07

    申请号：US18256760

    申请日：2021-12-10

    申请人： FUSE ENERGY TECHNOLOGIES CORP.

    发明人： Raymond GOLINGO ,  Jean-Christoph BTAICHE ,  Paul HARRIS ,  Ayan CHOUDHURY ,  Zahra SEIFOLLAHI MOGHADAM ,  Pierre TOCHON

    IPC分类号： G21B1/05 ,  H05H1/54

    CPC分类号： G21B1/05 ,  H05H1/54 ,  G21B1/21

    摘要： Plasma processing systems and methods for fusion power applications are disclosed. The system can include a plasma confinement device including a reaction chamber; a plasma formation and injection device configured to form a source plasma outside the reaction chamber and inject the source plasma inside the reaction chamber; and a power supply configured to supply power to the plasma confinement device to apply a voltage across the reaction chamber to compress the source plasma into a Z-pinch plasma capable of sustaining fusion reactions. The plasma confinement device can include an inner electrode surrounded by an outer electrode to define therebetween an acceleration region of the reaction chamber. The outer electrode can extend beyond the inner electrode to define an assembly region of the reaction chamber. The source plasma can be injected in the acceleration region and flowed into the assembly region to be compressed into the Z-pinch plasma.

    Electrode configuration for extended plasma confinement
    7.
    发明授权
    Electrode configuration for extended plasma confinement 有权

    公开(公告)号：US11744001B2

    公开(公告)日：2023-08-29

    申请号：US17841593

    申请日：2022-06-15

    申请人： ZAP ENERGY, INC.

    发明人： Eric T. Meier ,  Brian A. Nelson ,  Uri Shumlak

    IPC分类号： H05H1/06 ,  G21B1/05 ,  G21B1/21 ,  H05H1/54

    CPC分类号： H05H1/06 ,  G21B1/05 ,  G21B1/21 ,  H05H1/54

    摘要： Methods and systems are provided for plasma confinement utilizing various electrode and valve configurations. In one example, a device includes a first electrode positioned to define an outer boundary of an acceleration volume, a second electrode arranged coaxially with respect to the first electrode and positioned to define an inner boundary of the acceleration volume, at least one power supply to drive an electric current along a Z-pinch plasma column between the first second electrodes, and a set of valves to provide gas to the acceleration volume to fuel the Z-pinch plasma column, wherein an electron flow of the electric current is in a first direction from the second electrode to the first electrode. In additional or alternative examples, a shaping part is conductively connected to the second electrode to, in a presence of the gas, cause a gas breakdown of the gas to generate a sheared flow velocity profile.

    Hollow cathode apparatus
    8.
    发明授权
    Hollow cathode apparatus 有权

    公开(公告)号：US11690161B2

    公开(公告)日：2023-06-27

    申请号：US17054248

    申请日：2019-05-10

    申请人： University of Southampton

    发明人： Alexander Joey Nikolaos Daykin-Iliopoulos ,  Stephen Bernard Gabriel ,  Igor Golosnoy

    IPC分类号： H05H1/46 ,  H01J1/30 ,  H01J37/32 ,  H05H1/54 ,  H05H1/24

    CPC分类号： H05H1/46 ,  H01J1/30 ,  H01J37/32 ,  H05H1/54 ,  H05H1/245

    摘要： A hollow cathode apparatus includes an outer tubular dielectric barrier circumferentially surrounding an outer tubular surface of the cathode tube, the outer tubular dielectric barrier being composed of a barrier material which is electrically non-conductive. Also disclosed is a system comprising the hollow cathode apparatus, an anode which is spaced from the output end of the tubular cathode, and electrical circuitry connected between the cathode tube and the anode for connection to a source of electrical power for providing an electrical potential between the cathode and anode to cause an electric current to pass from the emitter into the input gas to form a plasma which is then output through the output end of the cathode tube to form a plasma plume. The electrical circuitry comprises: a first power supply for connecting the cathode and the cathode electrode to a first source of DC power in an ignition power mode, wherein the first power supply comprises a current control device which is adapted to control the current between the cathode and the cathode electrode, wherein the current control device is arranged to function as an anti-surge current stabiliser; and a second power supply for connecting the anode and the cathode to a second source of DC power in a steady state power mode.

    Dense plasma focus devices having first and second DPF accelerators
    9.
    发明授权
    Dense plasma focus devices having first and second DPF accelerators 有权

    公开(公告)号：US11589451B2

    公开(公告)日：2023-02-21

    申请号：US17418969

    申请日：2020-02-21

    申请人： Freent Technologies, Inc.

    发明人： Herbert U. Fluhler

    IPC分类号： H05H1/54 ,  G21B1/05

    摘要： A system for performing enhanced dense plasma acceleration includes two dense plasma fusion accelerators, each having two electrodes. One of the electrodes is positioned within a volume of the other. A conductive ring couples electrodes of the two plasma fusion accelerators. A plasma sheath from one accelerator and a plasma sheath from the other accelerator interact to form a portion of a cusp pinch. The plasma sheaths form portions of the cusp pinch via apertures of electrodes.