UV/halogen metals removal process
    1.
    发明授权
    UV/halogen metals removal process 失效
    UV /卤素金属去除工艺

    公开(公告)号:US5954884A

    公开(公告)日:1999-09-21

    申请号:US818890

    申请日:1997-03-17

    CPC分类号: H01L21/02046 H01L21/32136

    摘要: A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.

    摘要翻译: 描述了适用于从基材表面去除金属污染物的氯基干洗系统,其中金属污染物被氯化并通过UV照射还原成挥发性金属氯化物。 选择氯气分压,温度,紫外线带宽和/或基板暴露于含氯气体和紫外线的过程参数,以便实质上除去金属而不会过多的基板粗糙化。

    UV/halogen metals removal process
    2.
    发明授权
    UV/halogen metals removal process 有权
    UV /卤素金属去除工艺

    公开(公告)号:US06183566B2

    公开(公告)日:2001-02-06

    申请号:US09323663

    申请日:1999-06-01

    IPC分类号: B08B312

    CPC分类号: H01L21/02046 H01L21/32136

    摘要: A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.

    摘要翻译: 描述了适用于从基材表面去除金属污染物的氯基干洗系统,其中金属污染物被氯化并通过UV照射还原成挥发性金属氯化物。 选择氯气分压,温度,紫外线带宽和/或基板暴露于含氯气体和紫外线的过程参数,以便实质上除去金属而不会过多的基板粗糙化。

    Metals removal process
    3.
    发明授权
    Metals removal process 失效
    金属去除过程

    公开(公告)号:US6083413A

    公开(公告)日:2000-07-04

    申请号:US51686

    申请日:1998-10-01

    摘要: A process for removing metallic material, for instance copper, iron, nickle and their oxides, from a surface of a substrate such as a silicon, silicon oxide or gallium arsenide substrate. The process includes the steps of: a) placing the substrate in a reaction chamber; b) providing in the reaction chamber a gas mixture, the mixture comprising a first component which is fluorine or a fluorine-containing compound, which will spontaneously dissociate upon adsorption on the substrate surface and a second component which is a halosilane compound, the halosilane, and the fluorine if present, being activated by: i) irradiation with UV; ii) heating to a temperature of about 800.degree. C. or higher; or iii) plasma generation, to thereby convert said metallic material to a volatile metal-halogen-silicon compound, and c) removing the metal-halogen-silicon compound from the substrate by volatilization. The process may be used to remove both dispersed metal and bulk metal films or islands.

    摘要翻译: PCT No.PCT / US96 / 16731 Sec。 371日期:1998年10月1日 102(e)1998年10月1日PCT PCT 1996年10月18日PCT公布。 第WO97 / 15069号公报 日期1997年04月24日从硅,氧化硅或砷化镓衬底等基板的表面除去金属材料,例如铜,铁,镍及其氧化物的方法。 该方法包括以下步骤:a)将基底放置在反应室中; b)在反应室中提供气体混合物,所述混合物包含第一组分,其为氟或含氟化合物,其将在基材表面上吸附时自发解离,第二组分为卤代硅烷化合物,卤代硅烷, 并且如果存在氟,则通过以下方式活化:i)用UV照射; ii)加热到约800℃或更高的温度; 或iii)等离子体产生,从而将所述金属材料转化为挥发性金属 - 卤素 - 硅化合物,和c)通过挥发从基材中除去金属 - 卤素 - 硅化合物。 该方法可用于除去分散的金属和体金属膜或岛。

    Polishing pad apparatus and methods
    4.
    发明授权
    Polishing pad apparatus and methods 有权
    抛光垫装置和方法

    公开(公告)号:US06899612B2

    公开(公告)日:2005-05-31

    申请号:US10373513

    申请日:2003-02-25

    CPC分类号: B24B53/017

    摘要: Polishing pads having a surface morphology that results in a high degree of planarization efficiency when planarizing a wafer surface are disclosed. One conditioned polishing pad is non-porous and has a surface height distribution with a surface roughness Ra

    摘要翻译: 公开了当平坦化晶片表面时具有导致高平坦化效率的表面形态的抛光垫。 一个调理抛光垫是无孔的,具有表面粗糙度Ra <3微米的表面高度分布。 另一个调理抛光垫是多孔的,并且具有表面高度比R> = 60%的表面高度概率分布,或者具有不对称表面高度概率分布,其特征在于不对称因子A < 0.50。 还公开了使用抛光垫对衬垫调节和平坦化的方法。

    Chemical mechanical polishing pad
    6.
    发明授权
    Chemical mechanical polishing pad 有权
    化学机械抛光垫

    公开(公告)号:US07569268B2

    公开(公告)日:2009-08-04

    申请号:US11699775

    申请日:2007-01-29

    IPC分类号: B32B3/26 B24D11/00

    摘要: The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 μm and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, τ, of 1 to 10 μm as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, W1/2 that is less than or equal to the value of τ.

    摘要翻译: 抛光垫适用于平面化半导体,光学和磁性基板中的至少一个。 抛光垫具有至少3,000psi(20.7MPa)的极限拉伸强度和含有闭孔细孔的聚合物基体。 闭孔细孔的平均直径为1〜50μm,为抛光垫的1〜40体积%。 由于聚合物基体的天然孔隙率和通过用研磨剂实施周期性或连续调节而形成的表面纹理,衬垫纹理具有1-10μm的指数衰减常数τ,为1-10μm。 表面纹理具有特征半高度半宽度,W1 / 2小于或等于tau值。

    Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride
    7.
    发明授权
    Multi-step methods for chemical mechanical polishing silicon dioxide and silicon nitride 失效
    化学机械抛光二氧化硅和氮化硅的多步法

    公开(公告)号:US07291280B2

    公开(公告)日:2007-11-06

    申请号:US11023862

    申请日:2004-12-28

    IPC分类号: H01L21/302

    摘要: The present invention provides a method for polishing silica and silicon nitride on a semiconductor wafer comprising the steps of planarizing the silica with a first aqueous composition comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 1 phthalic acid and salts, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has an average molecular weight between 100 grams/mole to 1,000,000 grams/mole. The method further provides detecting an endpoint to the planarization, and clearing the silica with a second aqueous composition comprising by weight percent 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 abrasive and balance water.

    摘要翻译: 本发明提供了一种用于在半导体晶片上研磨二氧化硅和氮化硅的方法,包括以下步骤:用第一含水组合物对二氧化硅进行平面化,所述第一含水组合物包含0.01-5重量%的羧酸聚合物,0.02至6个研磨剂,0.01至10个聚乙烯吡咯烷酮,0 至5个阳离子化合物,0-1个邻苯二甲酸和盐,0-5个两性离子化合物和余量的水,其中聚乙烯吡咯烷酮的平均分子量为100克/摩尔至1,000,000克/摩尔。 该方法还提供了检测平面化的终点,并用第二含水组合物清除二氧化硅,所述第二含水组合物包含重量百分比为0.001至1的季铵化合物,0.001至1邻苯二甲酸及其盐,0.01至5羧酸聚合物,0.01至5 研磨和平衡水。

    Musical instrument pickup and methods
    8.
    发明授权
    Musical instrument pickup and methods 有权
    乐器拾音和方法

    公开(公告)号:US08664507B1

    公开(公告)日:2014-03-04

    申请号:US13290896

    申请日:2011-11-07

    IPC分类号: G10H3/00

    摘要: Musical instrument pickups and methods of constructing same to achieve a user-desired signal output level and a user-desired tonal characteristic from a stringed instrument are disclosed. The method may include steps for selecting a coil geometry, selecting a number of coils, selecting a coil wire gauge and number of turns for each coil and selecting a pole piece. In selecting the pole piece consideration may be given to pole piece composition, pole piece thickness, height and width, and pole piece response in terms of relative inductive and relative resonant frequency characteristics and/or the shape of the frequency response in the vicinity of resonance.

    摘要翻译: 公开了乐器拾音器及其构造方法以实现用户期望的信号输出电平和来自弦乐器的用户期望的音调特性。 该方法可以包括用于选择线圈几何形状,选择线圈数量,选择线圈线规和每个线圈的匝数并选择极片的步骤。 在选择极片时,考虑到相对电感和相对谐振频率特性和/或谐振附近的频率响应的形状,可以考虑极片组成,极片厚度,高度和宽度以及极片响应 。

    Musical instrument pickup systems
    9.
    发明授权
    Musical instrument pickup systems 有权
    乐器拾音系统

    公开(公告)号:US07989690B1

    公开(公告)日:2011-08-02

    申请号:US12568659

    申请日:2009-09-28

    IPC分类号: G10H3/14

    摘要: Musical instrument pickups comprising a plurality of coil-wire wrappings, each coil-wire wrapping having a particular geometric cross-section. Related embodiments exhibiting noise cancellation features are also disclosed.

    摘要翻译: 乐器拾音器包括多个线圈缠绕,每个线圈缠绕具有特定的几何横截面。 还公开了显示噪声消除特征的相关实施例。

    Musical instrument pickup
    10.
    发明授权
    Musical instrument pickup 有权
    乐器拾音

    公开(公告)号:US07612282B1

    公开(公告)日:2009-11-03

    申请号:US12104121

    申请日:2008-04-16

    IPC分类号: G10H3/18

    摘要: A musical instrument pickup comprising a plurality of coil-wire wrappings, each coil having a particular geometric cross-section. Each coil-wire wrapping is positioned around a pole piece. Related embodiments exhibiting noise cancellation features are also disclosed.

    摘要翻译: 一种包括多个线圈缠绕的乐器拾取器,每个线圈具有特定的几何横截面。 每个线圈绕线都围绕极片定位。 还公开了显示噪声消除特征的相关实施例。