摘要:
A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.
摘要:
A chlorine based dry-cleaning system appropriate for removing metal contaminants from the surface of substrate is described in which the metal contaminant is chlorinated and reduced to a volatile metal chloride by UV irradiation. The process parameters of chlorine gas partial pressure, temperature, ultraviolet bandwidth, and/or the sequence of exposure of the substrate to the chlorine containing gas and to the ultraviolet radiation are selected so as to effect substantial removal of the metal without excessive substrate roughening.
摘要:
A process for removing metallic material, for instance copper, iron, nickle and their oxides, from a surface of a substrate such as a silicon, silicon oxide or gallium arsenide substrate. The process includes the steps of: a) placing the substrate in a reaction chamber; b) providing in the reaction chamber a gas mixture, the mixture comprising a first component which is fluorine or a fluorine-containing compound, which will spontaneously dissociate upon adsorption on the substrate surface and a second component which is a halosilane compound, the halosilane, and the fluorine if present, being activated by: i) irradiation with UV; ii) heating to a temperature of about 800.degree. C. or higher; or iii) plasma generation, to thereby convert said metallic material to a volatile metal-halogen-silicon compound, and c) removing the metal-halogen-silicon compound from the substrate by volatilization. The process may be used to remove both dispersed metal and bulk metal films or islands.
摘要:
Polishing pads having a surface morphology that results in a high degree of planarization efficiency when planarizing a wafer surface are disclosed. One conditioned polishing pad is non-porous and has a surface height distribution with a surface roughness Ra
摘要:
The polishing pad is suitable for planarizing at least one of semiconductor, optical and magnetic substrates. The polishing pad has an ultimate tensile strength of at least 3,000 psi (20.7 MPa) and polymeric matrix containing closed cell pores. The closed cell pores have an average diameter of 1 to 50 μm and represent 1 to 40 volume percent of the polishing pad. The pad texture has an exponential decay constant, τ, of 1 to 10 μm as a result of the natural porosity of the polymeric matrix and a surface texture developed by implementing periodic or continuous conditioning with an abrasive. The surface texture has a characteristic half height half width, W1/2 that is less than or equal to the value of τ.
摘要:
The present invention provides a method for polishing silica and silicon nitride on a semiconductor wafer comprising the steps of planarizing the silica with a first aqueous composition comprising by weight percent 0.01 to 5 carboxylic acid polymer, 0.02 to 6 abrasive, 0.01 to 10 polyvinylpyrrolidone, 0 to 5 cationic compound, 0 to 1 phthalic acid and salts, 0 to 5 zwitterionic compound and balance water, wherein the polyvinylpyrrolidone has an average molecular weight between 100 grams/mole to 1,000,000 grams/mole. The method further provides detecting an endpoint to the planarization, and clearing the silica with a second aqueous composition comprising by weight percent 0.001 to 1 quaternary ammonium compound, 0.001 to 1 phthalic acid and salts thereof, 0.01 to 5 carboxylic acid polymer, 0.01 to 5 abrasive and balance water.
摘要:
Musical instrument pickups and methods of constructing same to achieve a user-desired signal output level and a user-desired tonal characteristic from a stringed instrument are disclosed. The method may include steps for selecting a coil geometry, selecting a number of coils, selecting a coil wire gauge and number of turns for each coil and selecting a pole piece. In selecting the pole piece consideration may be given to pole piece composition, pole piece thickness, height and width, and pole piece response in terms of relative inductive and relative resonant frequency characteristics and/or the shape of the frequency response in the vicinity of resonance.
摘要:
Musical instrument pickups comprising a plurality of coil-wire wrappings, each coil-wire wrapping having a particular geometric cross-section. Related embodiments exhibiting noise cancellation features are also disclosed.
摘要:
A musical instrument pickup comprising a plurality of coil-wire wrappings, each coil having a particular geometric cross-section. Each coil-wire wrapping is positioned around a pole piece. Related embodiments exhibiting noise cancellation features are also disclosed.