公开(公告)号：US07030375B1

公开(公告)日：2006-04-18

申请号：US10836635

申请日：2004-04-29

申请人： Anne L. Testoni ,  Gabor Toth

发明人： Anne L. Testoni ,  Gabor Toth

IPC分类号： H01J49/40

CPC分类号： H01J49/446

摘要： Methods and apparatus for determining the material composition of a semiconductor device at an area of interest are described. An electron time-of-flight spectrometer is used within a semiconductor inspection system. The spectrometer is placed on the opposite side of an objective lens from the area of interest. In one embodiment, the electron time-of-flight spectrometer is an electron drift tube. A computing module produces an electron emission spectrum for the materials at the area of interest.

摘要翻译： 描述了用于确定感兴趣区域的半导体器件的材料组成的方法和装置。 在半导体检测系统内使用电子飞行时间分光计。 光谱仪被放置在距离感兴趣区域的物镜的相对侧。 在一个实施例中，电子飞行时间分光计是电子漂移管。 计算模块为感兴趣区域的材料产生电子发射光谱。

公开(公告)号：US06753525B1

公开(公告)日：2004-06-22

申请号：US10335274

申请日：2002-12-31

申请人： Anne L. Testoni

发明人： Anne L. Testoni

IPC分类号： H01J3730

CPC分类号： H01J37/256 ,  H01J2237/2561

摘要： Techniques for determining the composition of a specimen under inspection by measuring backscatter electron emissions and then estimating the atomic number of the specimen are described. Typically, this technique is useful for inspecting features, such as defects, upon very small specimens such as semiconductor wafers. Charged particle beams are typically required to cause backscatter electrons to emanate from a specimen. One embodiment of the present invention involves measuring the backscatter electron count or current of a reference sample for which the atomic number is known. Another embodiment involves the use of an atomic number lookup table that is organized by feature size parameters and normalized backscatter electron counts or currents.

摘要翻译： 描述了通过测量反向散射电子发射然后估计样品的原子数来确定检查中的样品的组成的技术。 通常，这种技术可用于在诸如半导体晶片的非常小的样品上检查诸如缺陷的特征。 通常需要带电粒子束以使样品从反射散射电子发出。 本发明的一个实施例涉及测量原子序数已知的参考样品的反向散射电子数或电流。 另一个实施例涉及使用由特征尺寸参数和归一化反向散射电子计数或电流组织的原子序列查找表。

公开(公告)号：US06996492B1

公开(公告)日：2006-02-07

申请号：US10804826

申请日：2004-03-18

申请人： Anne L. Testoni

发明人： Anne L. Testoni

IPC分类号： G01K11/30

CPC分类号： G01N23/2252

摘要： Techniques for determining certain parameters of semiconductor specimens using X-ray spectroscopy are described. The invention can be used to determine parameters such as composition, dimensions, and density of semiconductor specimens. Specifically, an X-ray spectrum simulation algorithm is used to iteratively generate a theoretical X-ray spectrum for a semiconductor specimen having certain parameters. The iterative generation of theoretical X-ray spectrums continues until one of the theoretical X-ray spectrum closely matches the actual X-ray spectrum measured off of the specimen. In an alternative embodiment, this technique of generating theoretical X-ray spectrums can be used in combination with a pre-existing library of X-ray spectral signatures for semiconductor specimens having various parameters.

摘要翻译： 描述了使用X射线光谱确定半导体样品的某些参数的技术。 本发明可用于确定半导体样品的组成，尺寸和密度等参数。 具体地，使用X射线光谱模拟算法迭代地生成具有某些参数的半导体样本的理论X射线光谱。 理论X射线谱的迭代生成继续进行，直到理论X射线谱之一与测得的实际X射线光谱密切相关。 在替代实施例中，产生理论X射线光谱的技术可以与用于具有各种参数的半导体样本的X射线光谱特征的预先存在的文库结合使用。

公开(公告)号：US07132652B1

公开(公告)日：2006-11-07

申请号：US10811319

申请日：2004-03-25

申请人： Anne L. Testoni

发明人： Anne L. Testoni

IPC分类号： G01N23/00 ,  G21K7/00

CPC分类号： G01N23/22 ,  G06K9/6267 ,  G06K2209/19 ,  H01J2237/24585 ,  H01J2237/24592 ,  H01J2237/2561

摘要： Disclosed are methods and apparatus for classifying defects based on X-ray spectrum obtained from the defects. In general terms, the present invention provides pattern recognition techniques for accurately and efficiently classifying a defect based on an X-ray spectrum obtained from such defect and its surrounding substrate and structures, no matter the complexity of such substrate and structures. A pattern recognition technique generally includes training a pattern recognition process to recognize particular types of X-ray spectrum obtained from specimens as belonging to a particular defect type or other specific characteristic of a specimen. Once a pattern recognition process is set up to recognize or classify particular X-ray spectrum, the pattern recognition process can then be utilized to automatically classify specimens as having a specific characteristic or defect type.

摘要翻译： 公开了基于从缺陷获得的X射线光谱分类缺陷的方法和装置。 一般来说，本发明提供了用于基于由这种缺陷获得的X射线光谱及其周围的基板和结构来精确地和有效地对缺陷进行分类的模式识别技术，而不管这种基板和结构的复杂性。 模式识别技术通常包括训练模式识别过程以识别从样本获得的属于样本的特定缺陷类型或其他特定特征的特定类型的X射线光谱。 一旦模式识别过程被建立以识别或分类特定的X射线谱，则可以利用模式识别过程将样本自动分类为具有特定特征或缺陷类型。

公开(公告)号：US20140209820A1

公开(公告)日：2014-07-31

申请号：US14243554

申请日：2014-04-02

申请人： Kenneth J. Barry ,  Mark T. Brown ,  Michael L. Bufano ,  Gerald M. Friedman ,  Peter M. King ,  Matthew A. Medford ,  Anne L. Testoni ,  Steven R. Walther ,  Tzvi Avnery

发明人： Kenneth J. Barry ,  Mark T. Brown ,  Michael L. Bufano ,  Gerald M. Friedman ,  Peter M. King ,  Matthew A. Medford ,  Anne L. Testoni ,  Steven R. Walther ,  Tzvi Avnery

IPC分类号： H01J33/04 ,  G21K1/00

CPC分类号： H01J33/04 ,  G21K1/00

摘要： Systems and methods for manufacturing a vacuum device, such as an electron emitter, that includes a foil exit window palced over and joined to a support grid. In one particular method, the vacuum chamber of an electron emitter has a thin foil forming an exit window at one end. The thin foil may be titanium or any suitable material and the foil will typically enlarge during a bonding process that attaches the foil to the support grid. In one manufacturing process, the support grid is provided with a surface that has contours, typically being smooth recessed surfaces, that the foil once enlarged can lie against as the vacuum pulls the foil against the grid.

摘要翻译： 用于制造诸如电子发射器的真空装置的系统和方法，其包括在支撑网格上踩过并连接到支撑网格的箔出口窗口。 在一种特定方法中，电子发射器的真空室具有在一端形成出射窗的薄箔。 薄箔可以是钛或任何合适的材料，并且箔将通常在将箔附接到支撑网格的粘合过程中扩大。 在一个制造过程中，支撑格栅设置有表面，该表面具有轮廓，通常是光滑的凹面，当箔真空将箔拉到格栅上时，箔一旦放大就可以抵抗。

公开(公告)号：US07202475B1

公开(公告)日：2007-04-10

申请号：US10796577

申请日：2004-03-08

申请人： Anne L. Testoni

发明人： Anne L. Testoni

IPC分类号： H01J37/30 ,  G01N23/00 ,  G21K7/00

CPC分类号： G01N23/2252 ,  H01J37/256 ,  H01J2237/2445 ,  H01J2237/24495 ,  H01J2237/24592 ,  H01J2237/2561 ,  H01J2237/2566 ,  H01J2237/2611 ,  H01J2237/2807

摘要： Disclosed are methods and apparatus for characterizing defects by using X-ray emission analysis techniques. The X-rays are emitted in response to an impinging beam, such as an electron beam, directed towards the sample surface where a defect resides. It may also be used to help determine where the void(s) are with respect to the interconnect structure. Methods disclosed are for spatially locating defects in or on integrated circuits. Also disclosed are methods for identifying the elemental composition of defects and spatially locating different elemental components of defects.

摘要翻译： 公开了通过使用X射线发射分析技术来表征缺陷的方法和装置。 X射线响应于诸如电子束的撞击光束而被发射，该光束指向缺陷所在的样品表面。 它还可以用于帮助确定空隙相对于互连结构的位置。 公开的方法是用于空间定位集成电路中或其上的缺陷。 还公开了用于识别缺陷的元素组成并空间定位不同元素缺陷组分的方法。