公开(公告)号：US20050056219A1

公开(公告)日：2005-03-17

申请号：US10662522

申请日：2003-09-16

申请人： Anthony Dip ,  Michael Toeller ,  Kimberly Reid

发明人： Anthony Dip ,  Michael Toeller ,  Kimberly Reid

IPC分类号： C23C16/00 ,  C23C16/30 ,  C23C16/40 ,  H01L20060101

CPC分类号： C23C16/45531 ,  C23C16/308 ,  C23C16/401 ,  C23C16/405 ,  C23C16/45546

摘要： A method is provided for forming a metal-containing film on a substrate by a sequential gas exposure process in a batch type processing system. A metal-containing film can be formed on a substrate by providing a substrate in a process chamber of a batch type processing system, heating the substrate, sequentially flowing a pulse of a metal-containing precursor gas and a pulse of a reactant gas in the process chamber, and repeating the flowing processes until a metal-containing film with desired film properties is formed on the substrate. The method can form a metal-oxide film, for example HfO2 and ZrO2, a metal-oxynitride film, for example HfxOzNw, and HfxOzNw, a metal-silicate film, for example HfxSiyOz and ZrxSiyOz, and a nitrogen-containing metal-silicate film, for example HfxSiyOzNw and ZrxSiyOzNw. A processing tool containing a batch type processing system for forming a metal-containing film by a sequential gas exposure process is provided.

摘要翻译： 提供了一种通过在间歇式处理系统中通过连续气体曝光工艺在基板上形成含金属膜的方法。 通过在间歇式处理系统的处理室中设置基板，在衬底上形成含金属膜，加热衬底，顺序地将含金属的前体气体的脉冲和反应气体的脉冲流入 并且重复流动过程，直到在基底上形成具有所需膜特性的含金属膜。 该方法可以形成金属氧化物膜，例如HfO 2和ZrO 2，金属 - 氮氧化物膜，例如Hf x O z N w和Hf x O z N w，金属硅酸盐膜，例如Hf x Sb y O z和Zr x S y O z，以及含氮金属硅酸盐膜 ，例如HfxSiyOzNw和ZrxSiyOzNw。 提供了一种包含用于通过连续气体曝光工艺形成含金属膜的间歇式处理系统的加工工具。

公开(公告)号：US20070037412A1

公开(公告)日：2007-02-15

申请号：US11462234

申请日：2006-08-03

申请人： Anthony Dip ,  Sadao Sasaki ,  Michael Toeller ,  Kimberly Reid

发明人： Anthony Dip ,  Sadao Sasaki ,  Michael Toeller ,  Kimberly Reid

IPC分类号： H01L21/31

CPC分类号： H01L21/0228 ,  C23C16/0236 ,  C23C16/405 ,  C23C16/45546 ,  C23C16/45553 ,  C23C16/56 ,  H01L21/02181 ,  H01L21/02205 ,  H01L21/02312 ,  H01L21/02318 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/3141 ,  H01L21/31645

摘要： An in situ method for forming a HfO2 high-k dielectric layer in a batch wafer processing system. The method comprises first loading a plurality of wafers into a process chamber, and then pre-treating the plurality of wafers in the process chamber with a first oxidizer. After pre-treating the wafers, and without removing the wafers from the process chamber, the method then comprises depositing HfO2 on the plurality of wafers by atomic layer deposition, which comprises a plurality of deposition cycles, each cycle comprising alternating exposure of the plurality of wafers in the process chamber to a second oxidizer and a hafnium precursor. The hafnium precursor is selected from hafnium tert-butoxide (HTB) or hafnium tetra-diethylamide (TDEAH).

摘要翻译： 在间歇晶片处理系统中形成HfO 2高k电介质层的原位方法。 该方法包括首先将多个晶片加载到处理室中，然后用第一氧化器预处理处理室中的多个晶片。 在预处理晶片之后，并且不从处理室移除晶片，该方法然后包括通过原子层沉积在多个晶片上沉积HfO 2，其包括多个沉积循环，每个沉积循环 循环，包括将处理室中的多个晶片交替暴露于第二氧化剂和铪前体。 铪前体选自叔丁醇铪（HTB）或四乙基铪铪（TDEAH）。