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    SYSTEM AND METHOD FOR PROTECTION OF HIGH TEMPERATURE MACHINERY COMPONENTS
    8.
    发明申请
    SYSTEM AND METHOD FOR PROTECTION OF HIGH TEMPERATURE MACHINERY COMPONENTS 审中-公开
    用于保护高温机械部件的系统和方法

    公开(公告)号：US20130025291A1

    公开(公告)日：2013-01-31

    申请号：US13194474

    申请日：2011-07-29

    申请人： Peter Joel Meschter ,  Krishan Lal Luthra

    发明人： Peter Joel Meschter ,  Krishan Lal Luthra

    IPC分类号： F02C7/30 ,  F01D5/14 ,  F02C3/20

    CPC分类号： C04B41/009 ,  C04B41/52 ,  C04B41/89 ,  F01D5/288 ,  F23J7/00 ,  F23J15/003 ,  F23M5/00 ,  F23M2900/05004 ,  F23R3/002 ,  F23R3/007 ,  F23R2900/00019 ,  Y02T50/672 ,  Y02T50/673 ,  Y02T50/6765 ,  C04B35/565 ,  C04B35/806 ,  C04B35/584 ,  C04B35/58092 ,  C04B41/5024 ,  C04B41/4529 ,  C04B41/4554 ,  C04B41/5035

    摘要： A system comprises a plurality of components disposed to define a gas path. At least one component comprises a silicon-bearing substrate over which is disposed a coating, and the coating comprises a recession-resistant material exposed to the gas path. A silicon source is disposed in fluid communication with the gas path and is configured to be delivered to the gas path to maintain, in gas flowing in the gas path over the coating, a silicon mass concentration in the range from about 1.8×10−4 parts per million to about 1 part per million An associated method comprises directing a combustion gas flow within a gas path, the gas path defined by a plurality of components, wherein at least one component comprises a silicon-bearing substrate over which is disposed a coating, the coating comprising a recession-resistant material exposed to the gas path; and delivering a silicon-containing material to the gas flow from a silicon source disposed in fluid communication with the gas path to maintain within the gas flow over the coating, a silicon mass concentration in the range from about 1.8×10−4 parts per million to about 1 part per million.

    摘要翻译： 系统包括设置成限定气体路径的多个部件。 至少一个部件包括含硅基材，其上设置有涂层，并且涂层包括暴露于气体路径的耐久退化材料。 硅源设置成与气体路径流体连通，并且被配置为被输送到气体路径，以在气体流过涂层的气体路径中的气体中保持在约1.8×10-4的范围内的硅质量浓度 百万分之一到百万分之一到百万分之一相关联的方法包括引导气体通道内的燃烧气体流，由多个部件限定的气体通道，其中至少一个部件包括含硅基材，在其上设置涂层 ，所述涂层包括暴露于所述气体路径的耐衰退材料; 并且将含硅材料输送到来自设置成与气体路径流体连通的硅源的气流，以保持在涂层之上的气体流中，硅质量浓度在约1.8×10-4ppm 约为百万分之一。