摘要:
Methods of exposing conductive vias of semiconductor devices may comprise conformally forming a barrier material over conductive vias extending from a backside surface of a substrate. A self-planarizing isolation material may be formed over the barrier material. An exposed surface of the self-planarizing isolation material may be substantially planar. A portion of the self-planarizing isolation material, a portion of the barrier material, and a portion of protruding material of the conductive vias may be removed to expose the conductive vias. Removal of the self-planarizing isolation material, the barrier material, and the conductive vias may be stopped after exposing at least one laterally extending portion of the barrier material.
摘要:
A method of forming a through-substrate via includes forming a through-substrate via opening at least partially through a substrate from one of opposing sides of the substrate. A first material is deposited to line and narrow the through-substrate via opening. The first material is etched to widen at least an elevationally outermost portion of the narrowed through-substrate via opening on the one side. After the etching, a conductive second material is deposited to fill the widened through-substrate via opening. Additional implementations are disclosed. Integrated circuit substrates are disclosed independent of method of manufacture.
摘要:
A post-W CMP cleaning solution consists of carboxylic acid and deionized water. The carboxylic acid may be selected from the group consisting of (1) monocarboxylic acids; (2) dicarboxylic acids; (3) tricarboxylic acids; (4) polycarboxylic acids; (5) hydroxycarboxylic acids; (6) salts of the above-described carboxylic acids; and (7) any combination thereof. The post-W CMP cleaning solution can work well without adding any other chemical additives such as surfactants, corrosion inhibitors, pH adjusting agents or chelating agents.
摘要:
Methods of exposing conductive vias of semiconductor devices may comprise conformally forming a barrier material over conductive vias extending from a backside surface of a substrate. A self-planarizing isolation material may be formed over the barrier material. An exposed surface of the self-planarizing isolation material may be substantially planar. A portion of the self-planarizing isolation material, a portion of the barrier material, and a portion of protruding material of the conductive vias may be removed to expose the conductive vias. Removal of the self-planarizing isolation material, the barrier material, and the conductive vias may be stopped after exposing at least one laterally extending portion of the barrier material.
摘要:
A method of forming a through-substrate via includes forming a through-substrate via opening at least partially through a substrate from one of opposing sides of the substrate. A first material is deposited to line and narrow the through-substrate via opening. The first material is etched to widen at least an elevationally outermost portion of the narrowed through-substrate via opening on the one side. After the etching, a conductive second material is deposited to fill the widened through-substrate via opening. Additional implementations are disclosed. Integrated circuit substrates are disclosed independent of method of manufacture.
摘要:
A disk drive includes a disk drive base comprising a first metal material. The disk drive base may include a first opening and a first attachment feature to which a head actuator assembly pivot may be attached. A motor support may be embedded in the first opening in the disk drive base. The motor support consists of a second metal material having a damping coefficient higher than that of the first metal material. A rotary spindle may be attached to the motor support, and a disk may be attached to the rotary spindle.
摘要:
A disk drive has an actuator coil that includes first and second lateral legs joined by first and second longitudinal legs to form a closed coil periphery. The first lateral leg is disposed closer to the actuator pivot bore than the second lateral leg. The first and second longitudinal legs join the second lateral leg at a first interior bend location and at a second interior bend location within the closed coil periphery, respectively. A bobbin is disposed within the closed coil periphery and contacts the conductive coil at two locations (e.g. the first interior bend location and the second interior bend location). Preferably, the bobbin defines a total bobbin length and an average bobbin width, and the total bobbin length is at least 3 times the average bobbin width.
摘要:
A novel disk drive head stack assembly (HSA) includes a first head gimbal assembly attached to a first actuator arm. A dummy mass is attached to a second actuator arm. The dummy mass includes a mounting plate portion defining a mounting plate width. The mounting plate portion includes first and second projections. The dummy mass also includes a neck portion defining a neck width and a neck length. A root portion of the neck portion is disposed between the first and second projections, and defines first and second alcoves between the root portion and the first and second projections, respectively. The dummy mass also includes a distal mass portion defining a distal mass width and a distal mass length. The neck width is less than the mounting plate width, and the neck width is less than the distal mass width.
摘要:
A vibration testing apparatus comprises a first mooring bar coupled to the base; a second mooring bar coupled to the base such that the second mooring bar is disposed away from and faces the first mooring bar to define a space between the first and second mooring bars; a first strap comprising a first end secured to the first mooring bar, and a second strap comprising a first end secured to the first mooring bar. A second end of each of the first and second straps may be secured to the second mooring bar such that the first and second straps span the space between the first and second mooring bars and such that a tension on at least one of the first and second strap is controllable.
摘要:
A three dimensional or stacked circuit device includes a conductive channel cap on a conductor channel. The channel cap can be created via selective deposition or other process to prevent polishing down the conductive material to isolate the contacts. The conductor channel extends through a deck of multiple tiers of circuit elements that are activated via a gate. The gate is activated by electrical potential in the conductor channel. The conductive cap on the conductor channel can electrically connect the conductor channel to a bitline or other signal line, and/or to another deck of multiple circuit elements.