公开(公告)号：US20160109514A1

公开(公告)日：2016-04-21

申请号：US14514402

申请日：2014-10-15

申请人： Anurag Jindal ,  Nipun Mahajan

发明人： Anurag Jindal ,  Nipun Mahajan

IPC分类号： G01R31/3177

CPC分类号： G01R31/318572 ,  G01R31/3172 ,  G01R31/31908

摘要： An integrated circuit (IC) that is operable in scan test and functional modes includes scan-in pads, scan-out pads, scan chains, a compressor, a decompressor, a test control register, and a scan controller. The scan controller includes a multiple input shift register (MISR), an inverter, and multiple logic gates. The scan-in and scan-out pads receive scan test data and masking signals, respectively. The decompressor provides decompressed scan test data to the scan chains, which generate functional responses based on the decompressed scan test data. The compressor provides compressed functional responses to the scan controller. The logic gates receive the compressed functional responses and the masking signals from the compressor and the corresponding scan-out pads, respectively, and generate corresponding masked signals. The masking signals mask non-deterministic values in the decompressed functional responses. The MISR receives the masked signals and generates an error free signature.

摘要翻译： 在扫描测试和功能模式中可操作的集成电路（IC）包括扫描焊盘，扫描焊盘，扫描链，压缩器，解压缩器，测试控制寄存器和扫描控制器。 扫描控制器包括多输入移位寄存器（MISR），反相器和多个逻辑门。 扫描和扫描焊盘分别接收扫描测试数据和屏蔽信号。 解压缩器向扫描链提供解压缩的扫描测试数据，其基于解压缩的扫描测试数据生成功能响应。 压缩机为扫描控制器提供压缩的功能响应。 逻辑门分别​​从压缩器和对应的扫描输出焊盘接收压缩的功能响应和掩蔽信号，并产生相应的屏蔽信号。 掩蔽信号掩蔽解压缩的功能响应中的非确定性值。 MISR接收被屏蔽的信号并产生无差错的签名。

公开(公告)号：US09201116B1

公开(公告)日：2015-12-01

申请号：US14340572

申请日：2014-07-25

申请人： Anurag Jindal ,  Naman Gupta ,  Sagar Kataria ,  Pragya Shukla

发明人： Anurag Jindal ,  Naman Gupta ,  Sagar Kataria ,  Pragya Shukla

IPC分类号： G01R31/28 ,  G01R31/3177

CPC分类号： G01R31/318328

摘要： A method of generating test patterns for testing a semiconductor processor for small delay defects (SDD) includes modifying interconnect delay values of interconnect paths by introducing values corresponding to (i) set-up and clock to Q delays of elements in the paths and (ii) latencies of associated clock networks. Critical nodes are selected and test patterns targeting the selected critical nodes are generated using timing slack resulting from the modified interconnect delays. A first selection of nodes that are critical in at-speed scan mode testing and a second selection of nodes that are critical in functional mode testing are made by static timing analysis (STA). Only the nodes featuring in both the first and second selections are selected for targeting small delay defects using at-speed scan test patterns.

摘要翻译： 产生用于测试用于小延迟缺陷（SDD）的半导体处理器的测试图案的方法包括通过将对应于（i）设置和时钟的值引入到路径中的元素的Q延迟来修改互连路径的互连延迟值， ）相关时钟网络的延迟。 选择关键节点，并使用由修改的互连延迟导致的定时松弛来生成针对所选关键节点的测试模式。 在速度扫描模式测试中关键的节点的第一选择和在功能模式测试中关键的节点的第二选择是通过静态时序分析（STA）进行的。 选择在第一和第二选择中特征的节点，以使用高速扫描测试图案来瞄准小的延迟缺陷。

公开(公告)号：US08956974B2

公开(公告)日：2015-02-17

申请号：US13538272

申请日：2012-06-29

申请人： Wayne H. Huang ,  Anurag Jindal

发明人： Wayne H. Huang ,  Anurag Jindal

IPC分类号： H01L21/44 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/304 ,  H01L21/31053 ,  H01L21/3212 ,  H01L21/743 ,  H01L21/76831 ,  H01L21/7684 ,  H01L21/76883

摘要： Methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stop layer and a dielectric liner including dielectric material along sidewalls of openings, e.g., through-substrate openings, of the semiconductor device and excess dielectric material outside the openings. The method further includes forming a metal layer including metal plugs within the openings and excess metal. The excess metal and the excess dielectric material are simultaneously chemically-mechanically removed using a slurry including ceria and ammonium persulfate. The slurry is selected to cause selectivity for removing the excess dielectric material relative to the stop layer greater than about 5:1 as well as selectivity for removing the excess dielectric material relative to the excess metal from about 0.5:1 to about 1.5:1.

摘要翻译： 本文公开了制造半导体器件的方法。 根据特定实施例配置的方法包括形成包含电介质材料的阻挡层和电介质衬垫，所述阻挡层和电介质衬垫沿着半导体器件的开口的侧壁（例如贯穿衬底开口）和开口外的多余电介质材料。 该方法还包括在开口内形成包括金属塞的金属层和多余的金属。 使用包括二氧化铈和过硫酸铵的浆料同时化学机械地除去多余的金属和过量的电介质材料。 选择浆料以引起相对于止挡层去除多余电介质材料的选择性大于约5:1，以及相对于多余金属从约0.5:1至约1.5:1去除多余电介质材料的选择性。

公开(公告)号：US08911558B2

公开(公告)日：2014-12-16

申请号：US13069408

申请日：2011-03-23

申请人： Hongqi Li ,  Anurag Jindal ,  Jin Lu

发明人： Hongqi Li ,  Anurag Jindal ,  Jin Lu

IPC分类号： B08B3/12 ,  B08B6/00 ,  B08B7/00 ,  B08B7/02 ,  C25C1/00 ,  C25F3/30 ,  C25F5/00 ,  C11D11/00 ,  C11D7/26 ,  H01L21/02

CPC分类号： C11D11/0047 ,  C11D7/265 ,  H01L21/02074

摘要： A post-W CMP cleaning solution consists of carboxylic acid and deionized water. The carboxylic acid may be selected from the group consisting of (1) monocarboxylic acids; (2) dicarboxylic acids; (3) tricarboxylic acids; (4) polycarboxylic acids; (5) hydroxycarboxylic acids; (6) salts of the above-described carboxylic acids; and (7) any combination thereof. The post-W CMP cleaning solution can work well without adding any other chemical additives such as surfactants, corrosion inhibitors, pH adjusting agents or chelating agents.

摘要翻译： CMP后清洁溶液由羧酸和去离子水组成。 羧酸可以选自（1）一元羧酸; （2）二羧酸; （3）三羧酸; （4）多元羧酸; （5）羟基羧酸; （6）上述羧酸的盐; 和（7）其任何组合。 后CMP扫描溶液可以很好的工作，而不需要添加任何其他化学添加剂，如表面活性剂，腐蚀抑制剂，pH调节剂或螯合剂。

公开(公告)号：US20140281778A1

公开(公告)日：2014-09-18

申请号：US13967337

申请日：2013-08-14

申请人： Nisar Ahmed ,  Anurag Jindal ,  Nipun Mahajan

发明人： Nisar Ahmed ,  Anurag Jindal ,  Nipun Mahajan

IPC分类号： G01R31/3177

CPC分类号： G06F11/27 ,  G01R31/31727 ,  G01R31/3177 ,  G01R31/318552 ,  G01R31/3187

摘要： A processing system includes a clock generator circuit configured to receive a master clock signal and to output a plurality of clock signals, wherein the plurality of clock signals have a first frequency during a built-in self-test (BIST) mode and a plurality of shift-capture clock generator circuits. Each shift-capture clock generator circuit includes a clock gate circuit and a clock divider circuit and is configured to receive a corresponding one of the plurality of clock signals. At least one of the clock divider circuits changes the first frequency of the one of the plurality of clock signals to a second frequency during the BIST mode.

摘要翻译： 一种处理系统包括：时钟发生器电路，被配置为接收主时钟信号并输出​​多个时钟信号，其中所述多个时钟信号在内置自检（BIST）模式期间具有第一频率，并且多个时钟信号 移位捕获时钟发生器电路。 每个移位捕获时钟发生器电路包括时钟门电路和时钟分频器电路，并且被配置为接收多个时钟信号中相应的一个时钟信号。 至少一个时钟分频器电路在BIST模式期间将多个时钟信号之一的第一频率改变为第二频率。

公开(公告)号：US20140183740A1

公开(公告)日：2014-07-03

申请号：US13733508

申请日：2013-01-03

申请人： Hongqi Li ,  Anurag Jindal ,  Irina Vasilyeva

发明人： Hongqi Li ,  Anurag Jindal ,  Irina Vasilyeva

IPC分类号： H01L21/768 ,  H01L23/538

CPC分类号： H01L21/76865 ,  H01L21/7684 ,  H01L21/76841 ,  H01L21/76898 ,  H01L23/481 ,  H01L23/5384 ,  H01L2924/0002 ,  Y10S438/927 ,  H01L2924/00

摘要： Methods of exposing conductive vias of semiconductor devices may comprise conformally forming a barrier material over conductive vias extending from a backside surface of a substrate. A self-planarizing isolation material may be formed over the barrier material. An exposed surface of the self-planarizing isolation material may be substantially planar. A portion of the self-planarizing isolation material, a portion of the barrier material, and a portion of protruding material of the conductive vias may be removed to expose the conductive vias. Removal of the self-planarizing isolation material, the barrier material, and the conductive vias may be stopped after exposing at least one laterally extending portion of the barrier material.

摘要翻译： 暴露半导体器件的导电通孔的方法可以包括在从衬底的背面延伸的导电通孔上保形地形成阻挡材料。 可以在阻挡材料之上形成自平坦化隔离材料。 自平坦化隔离材料的暴露表面可以是基本上平面的。 可以去除自平坦化隔离材料的一部分，阻挡材料的一部分和导电通孔的突出材料的一部分，以露出导电通孔。 在暴露阻挡材料的至少一个横向延伸部分之后，可以停止去除自平坦化隔离材料，阻挡材料和导电通孔。

公开(公告)号：US09297855B1

公开(公告)日：2016-03-29

申请号：US14559899

申请日：2014-12-03

申请人： Anurag Jindal ,  Huangsheng Ding ,  Ling Wang

发明人： Anurag Jindal ,  Huangsheng Ding ,  Ling Wang

IPC分类号： G06F17/50 ,  G06F11/26 ,  G06F11/27 ,  G01R31/3177 ,  G06F11/263

CPC分类号： G01R31/3177 ,  G06F11/26 ,  G06F11/261 ,  G06F11/263 ,  G06F11/27 ,  G06F17/5022 ,  G06F17/5045 ,  G06F2217/14

摘要： An electronic design automation (EDA) tool for increasing the fault coverage of an integrated circuit (IC) design includes a processor that inserts at least one XOR gate, an AND gate, an OR gate and a multiplexer between observation test points and an existing first scan flip-flop of the IC design. The XOR gate provides an observation test signal to the first scan flip-flop by way of the AND gate, the OR gate, and the multiplexer such that the observation test signal covers the presence of faults at the observation test points. The first scan flip-flop outputs a data input signal, a set of test patterns, and a first set of test signals based on the observation test signal to indicate whether the IC design is faulty or not. A testable IC that can be structurally tested is fabricated using the IC design.

摘要翻译： 用于增加集成电路（IC）设计的故障覆盖的电子设计自动化（EDA）工具包括处理器，其在观察测试点和现有的第一个（或第一）之间插入至少一个异或门，与门，或门和多路复用器 扫描触发器的IC设计。 异或门通过与门，或门和多路复用器向第一扫描触发器提供观测测试信号，使得观察测试信号覆盖观察测试点处的故障的存在。 第一扫描触发器基于观察测试信号输出数据输入信号，一组测试图案和第一组测试信号，以指示IC设计是否有故障。 使用IC设计制造可以结构测试的可测IC。

公开(公告)号：US20130320538A1

公开(公告)日：2013-12-05

申请号：US13485539

申请日：2012-05-31

申请人： Anurag Jindal ,  Hongqi Li

发明人： Anurag Jindal ,  Hongqi Li

IPC分类号： H01L23/48 ,  H01L21/768

CPC分类号： H01L21/76898 ,  H01L23/481 ,  H01L2225/06541 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method of forming a through-substrate via includes forming a through-substrate via opening at least partially through a substrate from one of opposing sides of the substrate. A first material is deposited to line and narrow the through-substrate via opening. The first material is etched to widen at least an elevationally outermost portion of the narrowed through-substrate via opening on the one side. After the etching, a conductive second material is deposited to fill the widened through-substrate via opening. Additional implementations are disclosed. Integrated circuit substrates are disclosed independent of method of manufacture.

摘要翻译： 形成贯通基板通孔的方法包括通过至少部分地通过基板从衬底的相对侧中的一个开口至少部分地形成穿通基板。 沉积第一种材料以通过开口对直通基板进行线并使其变窄。 第一材料被蚀刻以在一侧通过开口加宽变窄的通过基板的至少最高的最外部分。 在蚀刻之后，沉积导电的第二材料以通过开口填充加宽的通过基板。 公开了其他实现。 独立于制造方法公开了集成电路基板。

公开(公告)号：US20120315754A1

公开(公告)日：2012-12-13

申请号：US13155908

申请日：2011-06-08

申请人： Xiaoyun Zhu ,  Dale W. Collins ,  Joseph Lindgren ,  Anurag Jindal

发明人： Xiaoyun Zhu ,  Dale W. Collins ,  Joseph Lindgren ,  Anurag Jindal

IPC分类号： H01L21/768

CPC分类号： H01L21/7684 ,  H01L21/76843 ,  H01L21/76865

摘要： Interconnects containing ruthenium and methods of forming can include utilization of a sacrificial protective material. Planarization or other material removal operations can be performed on a substrate having a recess, the recess containing a ruthenium containing material along with the sacrificial protective material. The protective material is later removed, and a conductor can be filled in the remaining recess.

摘要翻译： 含有钌的互连体和成型方法可以包括利用牺牲保护材料。 可以在具有凹部的基底上进行平面化或其它材料去除操作，所述凹槽包含含钌材料以及牺牲保护材料。 保护材料随后被去除，并且导体可以填充在剩余的凹部中。

公开(公告)号：US09213063B2

公开(公告)日：2015-12-15

申请号：US14225446

申请日：2014-03-26

申请人： Anurag Jindal

发明人： Anurag Jindal

IPC分类号： G01R31/3185

CPC分类号： G01R31/318583 ,  G01R31/318555

摘要： A reset generation circuit of an integrated circuit uses a scan data input pin as a scan mode exit control, which is enabled only when the IC reset pin of the device is active. The reset generation circuit allows a TAP controller to be scan testable yet at the same time the circuit provides a method to exit scan mode without requiring a power-up sequence or an extra pin.

摘要翻译： 集成电路的复位产生电路使用扫描数据输入引脚作为扫描模式退出控制，仅在器件的IC复位引脚有效时使能。 复位生成电路允许TAP控制器进行扫描测试，同时电路提供了一种退出扫描模式的方法，而不需要上电序列或额外的引脚。