SELF-MIXING INTERFEROMETRY USING BACKSIDE-EMITTING VCSEL DIODE WITH INTEGRATED PHOTODETECTOR

    公开(公告)号:US20250105594A1

    公开(公告)日:2025-03-27

    申请号:US18892108

    申请日:2024-09-20

    Applicant: Apple Inc.

    Abstract: Embodiments described herein include an optoelectronic sensing device having a vertical cavity surface emitting laser (VCSEL), a resonance cavity photodetector (RCPD), and a tunnel junction. The VCSEL is at least partly defined by a first set of semiconductor layers disposed on a substrate. The first set of semiconductor layers includes a first active region. The VCSEL is configured to emit laser light towards the substrate, upon application of a first bias voltage, and undergo self-mixing interference upon reception of reflections or backscatters thereof. The RCPD is vertically adjacent to the VCSEL and is at least partly defined by a second set of semiconductor layers disposed on the substrate. The second set of semiconductor layers includes a second active region. The RCPD is configured to detect, upon application of a second bias voltage, the self-mixing interference. The tunnel junction is disposed between the first active region and the second active region.

    PHOTONIC CRYSTAL SURFACE-EMITTING LASER DIODES AND RELATED DEVICES FOR SELF-MIXING INTERFERENCE OR FREQUENCY MODULATED CONTINUOUS WAVE SENSING

    公开(公告)号:US20250102628A1

    公开(公告)日:2025-03-27

    申请号:US18763961

    申请日:2024-07-03

    Applicant: Apple Inc.

    Abstract: Disclosed herein are self-mixing interference (SMI) sensors, frequency modulated continuous wave (FMCW) sensors, and electronic devices that include SMI and FMCW sensors. Both types of sensors include a photonic crystal surface-emitting laser diode. The SMI sensors include a photonic crystal surface-emitting laser diode configured to undergo SMI between a primary emitted light from the photonic crystal surface-emitting laser diode and reflections thereof from an object. The SMI sensor includes a photodetector configured to receive a secondary light emission from the photonic crystal surface-emitting laser diode and detect a parameter related to the SMI, from which distance or motion to the object may be inferred. The FMCW sensors include a photonic crystal surface-emitting laser diode configured to emit a primary light emission toward the object and a secondary light emission toward a light beam combiner. The light beam combiner also receives reflections from the object and detects distances and/or motion of the object based on the frequency modulations of the two light beams.

    Dynamic control of laser transverse mode

    公开(公告)号:US20240396301A1

    公开(公告)日:2024-11-28

    申请号:US18321016

    申请日:2023-05-22

    Applicant: APPLE INC.

    Abstract: An optoelectronic apparatus includes a semiconductor substrate, an electrically activated spatial light modulator disposed on the semiconductor substrate, and a vertical-cavity surface-emitting laser (VCSEL) disposed over the spatial light modulator on the semiconductor substrate. A controller is coupled to actuate the VCSEL to emit a beam of optical radiation and to control the spatial light modulator so as to modify an optical property of the beam.

    Wafer-Level Laser Assemblies Having Extended Resonant Cavities

    公开(公告)号:US20240372324A1

    公开(公告)日:2024-11-07

    申请号:US18143517

    申请日:2023-05-04

    Applicant: Apple Inc.

    Abstract: A laser assembly includes a set of one or more substrates having a first surface opposite a second surface. The set of one or more substrates defines a resonant cavity extension. The resonant cavity extension extends into the set of one or more substrates from an opening in the first surface. The laser assembly further includes a first reflector disposed within the resonant cavity extension and configured to reflect at least one wavelength of electromagnetic radiation received through the opening back through the opening; a laser having an active region configured to generate the at least one wavelength of electromagnetic radiation; and a second reflector. The active region is disposed in a resonant cavity extending between the first reflector and the second reflector. The resonant cavity includes the resonant cavity extension.

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