公开(公告)号：US11322630B2

公开(公告)日：2022-05-03

申请号：US17010874

申请日：2020-09-03

Applicant: Apple Inc.

Inventor： Weiping Li ,  Arnaud Laflaquière ,  Chinhan Lin ,  Fei Tan ,  Tong Chen ,  Xiaolong Fang

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/09 ,  H01L31/0304

Abstract: An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

公开(公告)号：US20210091244A1

公开(公告)日：2021-03-25

申请号：US17010874

申请日：2020-09-03

Applicant: Apple Inc.

Inventor： Weiping Li ,  Arnaud Laflaquière ,  Chinhan Lin ,  Fei Tan ,  Tong Chen ,  Xiaolong Fang

IPC: H01L31/0352 ,  H01L31/0304 ,  H01L31/09 ,  H01L31/0232

Abstract: An optoelectronic device includes a semiconductor substrate and a first stack of epitaxial layers, which are disposed over the semiconductor substrate and are configured to function as a photodetector, which emits a photocurrent in response to infrared radiation in a range of wavelengths greater than 940 nm. A second stack of epitaxial layers is disposed over the first stack and configured to function as an optical transmitter with an emission wavelength in the range of wavelengths greater than 940 nm.

公开(公告)号：US20240396301A1

公开(公告)日：2024-11-28

申请号：US18321016

申请日：2023-05-22

Applicant: APPLE INC.

Inventor： Pengfei Qiao ,  Chinhan Lin ,  Fei Tan ,  Alexander Hein

IPC: H01S5/183 ,  H01S5/00 ,  H01S5/02 ,  H01S5/062 ,  H01S5/30

Abstract: An optoelectronic apparatus includes a semiconductor substrate, an electrically activated spatial light modulator disposed on the semiconductor substrate, and a vertical-cavity surface-emitting laser (VCSEL) disposed over the spatial light modulator on the semiconductor substrate. A controller is coupled to actuate the VCSEL to emit a beam of optical radiation and to control the spatial light modulator so as to modify an optical property of the beam.

公开(公告)号：US20220069545A1

公开(公告)日：2022-03-03

申请号：US17378711

申请日：2021-07-18

Applicant: Apple Inc.

Inventor： Harish Venkataraman ,  Chinhan Lin ,  Fei Tan ,  Ido Luft ,  Moshe Laifenfeld ,  Susan A. Thompson

IPC: H01S5/042 ,  H03K17/687

Abstract: An optoelectronic device includes a laser diode, a driver and a reverse-bias circuit. The laser diode has a first terminal and a second terminal. The driver is coupled to drive current pulses through the laser diode between the first and second terminals. The reverse-bias circuit is configured to reverse-bias the laser diode during time intervals derived from the current pulses.

公开(公告)号：US20210336422A1

公开(公告)日：2021-10-28

申请号：US17228742

申请日：2021-04-13

Applicant: Apple Inc.

Inventor： Fei Tan ,  Arnaud Laflaquiere ,  Chinhan Lin ,  Christophe Verove ,  Jae Y Park

IPC: H01S5/183 ,  H01S5/343 ,  H01S5/042

Abstract: An optoelectronic device includes: (i) a semiconductor substrate doped with a first level of n-type dopants, (ii) a contact semiconductor layer disposed over the semiconductor substrate and doped with a second level of n-type dopants, larger than the first level, (iii) an upper distributed Bragg-reflector (DBR) stack disposed over the contact semiconductor layer and including alternating first and second epitaxial semiconductor layers having respective first and second indexes of refraction that differ from one another in a predefined wavelength band, (iv) a set of epitaxial layers disposed over the upper DBR, the set of epitaxial layers includes one or more III-V semiconductor materials and defines: (a) a quantum well structure, and (b) a confinement layer, and (v) a lower DBR stack disposed over the set of epitaxial layers, opposite the upper DBR, and including alternating dielectric and semiconductor layers.