SELF-MIXING INTERFEROMETRY USING BACKSIDE-EMITTING VCSEL DIODE WITH INTEGRATED PHOTODETECTOR

    公开(公告)号:US20250105594A1

    公开(公告)日:2025-03-27

    申请号:US18892108

    申请日:2024-09-20

    Applicant: Apple Inc.

    Abstract: Embodiments described herein include an optoelectronic sensing device having a vertical cavity surface emitting laser (VCSEL), a resonance cavity photodetector (RCPD), and a tunnel junction. The VCSEL is at least partly defined by a first set of semiconductor layers disposed on a substrate. The first set of semiconductor layers includes a first active region. The VCSEL is configured to emit laser light towards the substrate, upon application of a first bias voltage, and undergo self-mixing interference upon reception of reflections or backscatters thereof. The RCPD is vertically adjacent to the VCSEL and is at least partly defined by a second set of semiconductor layers disposed on the substrate. The second set of semiconductor layers includes a second active region. The RCPD is configured to detect, upon application of a second bias voltage, the self-mixing interference. The tunnel junction is disposed between the first active region and the second active region.

    Large Mode Surface-Emitting Lasers for Self-Mixing Interferometry

    公开(公告)号:US20240305063A1

    公开(公告)日:2024-09-12

    申请号:US18423005

    申请日:2024-01-25

    Applicant: Apple Inc.

    CPC classification number: H01S5/18361 H01S5/11 H01S5/18313

    Abstract: An optoelectronic device may include a first set of distributed Bragg reflective (DBR) layers, a second set of DBR layers, a gain region, and an enclosure layer between the gain region and the second set of DBR layers. In some cases, the enclosure layer defines a non-limiting mode oxide aperture. The optoelectronic device may also include a high contrast grating (HCG) mirror element disposed on a side of the second set of DBR layers. In some cases, the HCG mirror element has a first reflection coefficient that is greater than a second reflection coefficient of the second set of DBR layers. Another optoelectronic device may include a photonic crystal (PhC) mirror layer and a gain region disposed between the PhC mirror layer and a set of DBR layers.

    PHOTONIC CRYSTAL SURFACE-EMITTING LASER DIODES AND RELATED DEVICES FOR SELF-MIXING INTERFERENCE OR FREQUENCY MODULATED CONTINUOUS WAVE SENSING

    公开(公告)号:US20250102628A1

    公开(公告)日:2025-03-27

    申请号:US18763961

    申请日:2024-07-03

    Applicant: Apple Inc.

    Abstract: Disclosed herein are self-mixing interference (SMI) sensors, frequency modulated continuous wave (FMCW) sensors, and electronic devices that include SMI and FMCW sensors. Both types of sensors include a photonic crystal surface-emitting laser diode. The SMI sensors include a photonic crystal surface-emitting laser diode configured to undergo SMI between a primary emitted light from the photonic crystal surface-emitting laser diode and reflections thereof from an object. The SMI sensor includes a photodetector configured to receive a secondary light emission from the photonic crystal surface-emitting laser diode and detect a parameter related to the SMI, from which distance or motion to the object may be inferred. The FMCW sensors include a photonic crystal surface-emitting laser diode configured to emit a primary light emission toward the object and a secondary light emission toward a light beam combiner. The light beam combiner also receives reflections from the object and detects distances and/or motion of the object based on the frequency modulations of the two light beams.

    Dynamic control of laser transverse mode

    公开(公告)号:US20240396301A1

    公开(公告)日:2024-11-28

    申请号:US18321016

    申请日:2023-05-22

    Applicant: APPLE INC.

    Abstract: An optoelectronic apparatus includes a semiconductor substrate, an electrically activated spatial light modulator disposed on the semiconductor substrate, and a vertical-cavity surface-emitting laser (VCSEL) disposed over the spatial light modulator on the semiconductor substrate. A controller is coupled to actuate the VCSEL to emit a beam of optical radiation and to control the spatial light modulator so as to modify an optical property of the beam.

    Wavelength Modulated Self-Mixing Interferometry Using Multi-Junction VCSEL Diodes

    公开(公告)号:US20240006858A1

    公开(公告)日:2024-01-04

    申请号:US18142812

    申请日:2023-05-03

    Applicant: Apple Inc.

    CPC classification number: H01S5/423 H01S5/18394 H01S5/0262 H01S5/34313

    Abstract: Disclosed herein are self-mixing interferometry (SMI) sensors that include a multi-junction (MJ) vertical-cavity surface-emitting laser (VCSEL) diode that emits laser light in two directions, one direction being directed toward a receiving photodiode and another toward an object. Reflections from the object induce self-mixing interference within a resonance cavity of the MJ-VCSEL altering a wavelength of the emitted laser light. The SMI may infer distance and/or motion of the object from the alterations in the wavelength. In various embodiments, the MJ-VCSEL and photodiode are successively formed as a single unit upon a single substrate. In other embodiments, the MJ-VCSEL and the photodiode may be formed on separate wafers or chips that are then joined at a common interface surface. Arrays of combinations of MJ-VCSELs and associated photodiodes may be included in an SMI.

Patent Agency Ranking