公开(公告)号：US11437215B2

公开(公告)日：2022-09-06

申请号：US16714097

申请日：2019-12-13

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Antonella Cucchetti ,  Eric D. Hermanson ,  Frank Sinclair ,  Jay T. Scheuer ,  Robert C. Lindberg

IPC: H01J37/12 ,  H01J37/24 ,  H01J37/30 ,  H01L21/425 ,  H01J37/32 ,  H01J37/08

Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.

公开(公告)号：US11810754B2

公开(公告)日：2023-11-07

申请号：US17546667

申请日：2021-12-09

Applicant: Applied Materials, Inc.

Inventor： Eric D. Hermanson ,  Nevin Clay ,  Antonella Cucchetti ,  Philip Layne ,  Sudhakar Mahalingam ,  Michael Simmons

IPC: H01J37/304

CPC classification number: H01J37/3045 ,  H01J2237/2446 ,  H01J2237/24578

Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a calibration sensor disposed in the beam line after the mass analyzer. The calibration sensor is able to measure both the total current of the ribbon ion beam, as well as provide information about its vertical position. Information from the calibration sensor can then be utilized by a controller to adjust various parameters to improve the density as well as the vertical position. In some embodiments, the calibration sensor may include a plurality of Faraday sensors, where, both the total current and the vertical position of the ion beam can be determined. Furthermore, the focus of the ion beam can be estimated based on the distribution of the current in the height direction.

公开(公告)号：US20210020399A1

公开(公告)日：2021-01-21

申请号：US16542731

申请日：2019-08-16

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Shengwu Chang ,  Frank Sinclair ,  Antonella Cucchetti ,  Eric D Hermanson ,  Christopher Campbell

IPC: H01J37/12 ,  H01J37/317 ,  H01J37/05

Abstract: Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.

公开(公告)号：US20230187171A1

公开(公告)日：2023-06-15

申请号：US17546667

申请日：2021-12-09

Applicant: Applied Materials, Inc.

Inventor： Eric D. Hermanson ,  Nevin Clay ,  Antonella Cucchetti ,  Philip Layne ,  Sudhakar Mahalingam ,  Michael Simmons

IPC: H01J37/304

CPC classification number: H01J37/3045 ,  H01J2237/2446 ,  H01J2237/24578

Abstract: A system and method for optimizing a ribbon ion beam in a beam line implantation system is disclosed. The system includes a calibration sensor disposed in the beam line after the mass analyzer. The calibration sensor is able to measure both the total current of the ribbon ion beam, as well as provide information about its vertical position. Information from the calibration sensor can then be utilized by a controller to adjust various parameters to improve the density as well as the vertical position. In some embodiments, the calibration sensor may include a plurality of Faraday sensors, where, both the total current and the vertical position of the ion beam can be determined. Furthermore, the focus of the ion beam can be estimated based on the distribution of the current in the height direction.

公开(公告)号：US20210183609A1

公开(公告)日：2021-06-17

申请号：US16714097

申请日：2019-12-13

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Antonella Cucchetti ,  Eric D. Hermanson ,  Frank Sinclair ,  Jay T. Scheuer ,  Robert C. Lindberg

IPC: H01J37/12 ,  H01J37/24 ,  H01J37/32 ,  H01J37/30 ,  H01L21/425

Abstract: Provided herein are approaches for decreasing particle generation in an electrostatic lens. In some embodiments, an ion implantation system may include an electrostatic lens including an entrance for receiving an ion beam and an exit for delivering the ion beam towards a target, the electrostatic lens including a first terminal electrode, a first suppression electrode, and a first ground electrode disposed along a first side of an ion beamline, wherein the first ground electrode is grounded and positioned adjacent the exit. The electrostatic lens may further include a second terminal electrode, a second suppression electrode, and a second ground electrode disposed along a second side of the ion beamline, wherein the second ground electrode is grounded and positioned adjacent the exit. The implantation system may further include a power supply operable to supply a voltage and a current to the electrostatic lens for controlling the ion beam.

公开(公告)号：US11011343B2

公开(公告)日：2021-05-18

申请号：US16542731

申请日：2019-08-16

Applicant: APPLIED Materials, Inc.

Inventor： Alexandre Likhanskii ,  Shengwu Chang ,  Frank Sinclair ,  Antonella Cucchetti ,  Eric D Hermanson ,  Christopher Campbell

IPC: H01J37/12 ,  H01J37/317 ,  H01J37/05

Abstract: Provided herein are approaches for increasing operational range of an electrostatic lens. An electrostatic lens of an ion implantation system may receive an ion beam from an ion source, the electrostatic lens including a first plurality of conductive beam optics disposed along one side of an ion beam line and a second plurality of conductive beam optics disposed along a second side of the ion beam line. The ion implantation system may further include a power supply in communication with the electrostatic lens, the power supply operable to supply a voltage and a current to at least one of the first and second plurality of conductive beam optics, wherein the voltage and the current deflects the ion beam at a beam deflection angle, and wherein the ion beam is accelerated and then decelerated within the electrostatic lens.