公开(公告)号：US09991157B2

公开(公告)日：2018-06-05

申请号：US15206112

申请日：2016-07-08

Applicant: Applied Materials, Inc.

Inventor： Tony Chiang ,  Gongda Yao ,  Peijun Ding ,  Fusen E. Chen ,  Barry L. Chin ,  Gene Y. Kohara ,  Zheng Xu ,  Hong Zhang

IPC: H01L21/768 ,  C23C14/04 ,  C23C14/16 ,  H01L21/285

CPC classification number: H01L21/76843 ,  C23C14/046 ,  C23C14/165 ,  H01L21/2855 ,  H01L21/76805 ,  H01L21/76844 ,  H01L21/76846 ,  H01L21/76862 ,  H01L21/76865 ,  H01L21/76871 ,  H01L21/76877 ,  H01L21/76879 ,  H01L21/76883

Abstract: We disclose a method of applying a sculptured layer of material on a semiconductor feature surface using ion deposition sputtering, wherein a surface onto which the sculptured layer is applied is protected to resist erosion and contamination by impacting ions of a depositing layer. A first protective layer of material is deposited on a substrate surface using traditional sputtering or ion deposition sputtering, in combination with sufficiently low substrate bias that a surface onto which the layer is applied is not eroded away or contaminated during deposition of the protective layer. Subsequently, a sculptured second layer of material is applied using ion deposition sputtering at an increased substrate bias, to sculpture a shape from a portion of the first protective layer of material and the second layer of depositing material. The method is particularly applicable to the sculpturing of barrier layers, wetting layers, and conductive layers upon semiconductor feature surfaces.

公开(公告)号：US09031685B2

公开(公告)日：2015-05-12

申请号：US14149560

申请日：2014-01-07

Applicant: Applied Materials, Inc.

Inventor： Barry L. Chin ,  Alfred W. Mak ,  Lawrence C. Lei ,  Ming Xi ,  Hua Chung ,  Ken Kaung Lai ,  Jeong Soo Byun

IPC: G06F19/00 ,  C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45544 ,  C23C16/45525 ,  C23C16/45548 ,  C23C16/45551 ,  C23C16/4583

Abstract: A method and apparatus for atomic layer deposition (ALD) is described. In one embodiment, an apparatus comprises a vacuum chamber body having a contiguous internal volume comprised of a first deposition region spaced-apart from a second deposition region, the chamber body having a feature operable to minimize intermixing of gases between the first and the second deposition regions, a first gas port formed in the chamber body and positioned to pulse gas preferentially to the first deposition region to enable a first deposition process to be performed in the first deposition region, and a second gas port formed in the chamber body and positioned to pulse gas preferentially to the second deposition region to enable a second deposition process to be performed in the second deposition region is provided.

Abstract translation: 描述了用于原子层沉积（ALD）的方法和装置。 在一个实施例中，一种装置包括具有连续的内部容积的真空室主体，其包括与第二沉积区域间隔开的第一沉积区域，所述室主体具有可操作以最小化第一和第二沉积物之间的气体混合的特征 区域，形成在所述室主体中并且定位成优先地将气体脉冲至所述第一沉积区域的第一气体端口，以使得能够在所述第一沉积区域中执行第一沉积工艺，以及形成在所述室主体中并定位成 优选提供脉冲气体到第二沉积区域以使得能够在第二沉积区域中进行第二沉积工艺。