公开(公告)号：US20240290623A1

公开(公告)日：2024-08-29

申请号：US18115269

申请日：2023-02-28

Applicant: Applied Materials, Inc.

Inventor： Bin Yao ,  Zihui Li ,  Jiayin Huang ,  Anchuan Wang ,  Chia-Ling Kao ,  Nitin K. Ingle

IPC: H01L21/3065 ,  H01J37/32

CPC classification number: H01L21/3065 ,  H01J37/32357 ,  H01J37/32816 ,  H01J2237/182 ,  H01J2237/334

Abstract: Exemplary semiconductor processing methods may include providing a pre-treatment precursor to a processing a remote plasma system of a semiconductor processing chamber. The methods may include generating plasma effluents of the pre-treatment precursor in the remote plasma system. The methods may include flowing plasma effluents of the pre-treatment precursor to a processing region of the semiconductor processing chamber. A substrate including alternating layers of material may be disposed within the processing region. The alternating layers of material may include a silicon-and-germanium-containing material. The methods may include contacting the substrate with the plasma effluents of the pre-treatment precursor. The methods may include etching the silicon-and-germanium-containing material. The methods may include providing a post-treatment precursor to the processing region. The methods may include contacting the substrate with the post-treatment precursor. The methods may include removing the portion of the silicon-and-germanium-containing material.

公开(公告)号：US20240282585A1

公开(公告)日：2024-08-22

申请号：US18112252

申请日：2023-02-21

Applicant: Applied Materials, Inc.

Inventor： Bin Yao ,  Zihui Li ,  Anchuan Wang

IPC: H01L21/3213 ,  H01L29/66

CPC classification number: H01L21/32138 ,  H01L21/32137 ,  H01L29/66439 ,  H01J37/32357 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775 ,  H01L29/78687 ,  H01L29/78696

Abstract: Exemplary semiconductor processing methods may include providing a treatment precursor to a processing a remote plasma system of a semiconductor processing chamber. The methods may include generating plasma effluents of the treatment precursor in the remote plasma system. The methods may include flowing plasma effluents of the treatment precursor to a processing region of the semiconductor processing chamber. A substrate including alternating layers of material may be disposed within the processing region. The alternating layers of material may include a silicon-and-germanium-containing material. The methods may include contacting the substrate with the plasma effluents of the treatment precursor. The contacting may remove a residue from a surface of the silicon-and-germanium-containing material.