LOW OPEN AREA AND COUPON ENDPOINT DETECTION

    公开(公告)号:US20240429077A1

    公开(公告)日:2024-12-26

    申请号:US18821569

    申请日:2024-08-30

    Abstract: The disclosure describes apparatus and method for detecting an endpoint in plasma-assisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more groups of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tube (PMT) array or based on photodiodes (e.g., avalanche photodiodes (APDs)).

    TRANSMISSION CORRECTED PLASMA EMISSION USING IN-SITU OPTICAL REFLECTOMETRY

    公开(公告)号:US20230078567A1

    公开(公告)日:2023-03-16

    申请号:US17447745

    申请日:2021-09-15

    Abstract: Implementations disclosed describe a system including a light source, an optical sensor, and a processing device. The light source directs, during a first time, a probe light into a processing chamber through a window. The light source ceases, during a second time, directing the probe light into the processing chamber through the window. The optical sensor detects, during the first time, a first intensity of a first light. The first light includes a portion of the probe light reflected from the window and a light transmitted from an environment of the processing chamber through the window. The optical sensor detects, during the second time, a second intensity of a second light. The second light includes the light transmitted from the environment of the processing chamber through the window. The processing device determines, using the first intensity and the second intensity, a transmission coefficient of the window.

    LOW OPEN AREA AND COUPON ENDPOINT DETECTION

    公开(公告)号:US20220020617A1

    公开(公告)日:2022-01-20

    申请号:US16932630

    申请日:2020-07-17

    Abstract: The disclosure describes apparatus and method for detecting an endpoint in plasma-assisted wafer processing in a chamber. A fiber array comprising a plurality of fibers collects optical emission light from the chamber during the plasma-assisted wafer processing. The fiber array is split into two or more groups of fibers, each group carrying a portion of the light to a segment of a photodetector. Each segment of photodetector has a corresponding narrowband optical filter designed for a specific range of wavelengths. A computer processor analyzes detected signals from the plurality of segments of the photodetector, and determines, based on the analysis of the detected signals, an endpoint of the plasma-assisted wafer processing as indicated by the presence or the absence of the one or more chemical species in the chamber. The photodetector can be based on photomultiplier tube (PMT) array or based on photodiodes (e.g., avalanche photodiodes (APDs)).

    TRANSMISSION CORRECTED PLASMA EMISSION USING IN-SITU OPTICAL REFLECTOMETRY

    公开(公告)号:US20240361239A1

    公开(公告)日:2024-10-31

    申请号:US18767516

    申请日:2024-07-09

    CPC classification number: G01N21/55 G01N2021/558

    Abstract: Implementations disclosed describe a system including a light source, an optical sensor, and a processing device. The light source directs, during a first time, a probe light into a processing chamber through a window. The light source ceases, during a second time, directing the probe light into the processing chamber through the window. The optical sensor detects, during the first time, a first intensity of a first light. The first light includes a portion of the probe light reflected from the window and a light transmitted from an environment of the processing chamber through the window. The optical sensor detects, during the second time, a second intensity of a second light. The second light includes the light transmitted from the environment of the processing chamber through the window. The processing device determines, using the first intensity and the second intensity, a transmission coefficient of the window.

    Transmission corrected plasma emission using in-situ optical reflectometry

    公开(公告)号:US12031910B2

    公开(公告)日:2024-07-09

    申请号:US17447745

    申请日:2021-09-15

    CPC classification number: G01N21/55 G01N2021/558

    Abstract: Implementations disclosed describe a system including a light source, an optical sensor, and a processing device. The light source directs, during a first time, a probe light into a processing chamber through a window. The light source ceases, during a second time, directing the probe light into the processing chamber through the window. The optical sensor detects, during the first time, a first intensity of a first light. The first light includes a portion of the probe light reflected from the window and a light transmitted from an environment of the processing chamber through the window. The optical sensor detects, during the second time, a second intensity of a second light. The second light includes the light transmitted from the environment of the processing chamber through the window. The processing device determines, using the first intensity and the second intensity, a transmission coefficient of the window.

    THIN FILM, IN-SITU MEASUREMENT THROUGH TRANSPARENT CRYSTAL AND TRANSPARENT SUBSTRATE WITHIN PROCESSING CHAMBER WALL

    公开(公告)号:US20210391157A1

    公开(公告)日:2021-12-16

    申请号:US16946263

    申请日:2020-06-12

    Abstract: A system includes a transparent crystal, at least part of which is embedded within a wall and a liner of a processing chamber. The transparent crystal has a proximal end and a distal end, the distal end having a distal surface exposed to an interior of the processing chamber. A transparent thin film is deposited on the distal surface and has chemical properties substantially matching those of the liner. A light coupling device is to: transmit light, from a light source, through the proximal end of the transparent crystal, and focus, into a spectrometer, light received reflected back from a combination of the distal surface, a surface of the transparent thin film, and a surface of a process film layer deposited on the transparent thin film. The spectrometer is to detect a first spectrum within the focused light that is representative of the process film layer.

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