公开(公告)号：US09639097B2

公开(公告)日：2017-05-02

申请号：US14497253

申请日：2014-09-25

Applicant: Applied Materials, Inc.

Inventor： Chetan Mahadeswaraswamy ,  Kartik Ramaswamy ,  Bryan Liao ,  Sergio Shoji ,  Duy D. Nguyen ,  Hamid Noorbakhsh ,  David Palagashvili

IPC: G06F19/00 ,  G05D23/19 ,  H01J37/32 ,  H01L21/67 ,  G05B15/02

CPC classification number: G05D23/19 ,  G05B15/02 ,  H01J37/32522 ,  H01J37/32724 ,  H01J37/32908 ,  H01J37/3299 ,  H01L21/67248

Abstract: Methods and systems for controlling temperatures in plasma processing chamber for a wide range of setpoint temperatures and reduced energy consumption. Temperature control is coordinated between a coolant liquid loop and a heat source by a control algorithm implemented by the plasma processing module controller. The control algorithm may completely stop the flow of coolant liquid to a temperature-controlled component in response to a feedback signal indicating an actual temperature is below the setpoint temperature. The control algorithm may further be based at least in part on a feedforward control signal derived from a plasma power or change in plasma power input into the processing chamber during process recipe execution.

公开(公告)号：US08962488B2

公开(公告)日：2015-02-24

申请号：US13849729

申请日：2013-03-25

Applicant: Applied Materials, Inc.

Inventor： Bryan Liao ,  Katsumasa Kawasaki ,  Yashaswini Pattar ,  Sergio Fukuda Shoji ,  Duy D. Nguyen ,  Kartik Ramaswamy ,  Ankur Agarwal ,  Phillip Stout ,  Shahid Rauf

IPC: H01L21/302 ,  C23F1/00 ,  H01J37/32 ,  H01L21/311

CPC classification number: C23F1/00 ,  H01J37/32082 ,  H01J37/32146 ,  H01J37/32165 ,  H01L21/31116

Abstract: Methods for processing a substrate are provided herein. In some embodiments, a method of etching a dielectric layer includes generating a plasma by pulsing a first RF source signal having a first duty cycle; applying a second RF bias signal having a second duty cycle to the plasma; applying a third RF bias signal having a third duty cycle to the plasma, wherein the first, second, and third signals are synchronized; adjusting a phase variance between the first RF source signal and at least one of the second or third RF bias signals to control at least one of plasma ion density non-uniformity in the plasma or charge build-up on the dielectric layer; and etching the dielectric layer with the plasma.

Abstract translation: 本文提供了处理基板的方法。 在一些实施例中，蚀刻介电层的方法包括通过脉冲具有第一占空比的第一RF源信号来产生等离子体; 向所述等离子体施加具有第二占空比的第二RF偏置信号; 向所述等离子体施加具有第三占空比的第三RF偏置信号，其中所述第一，第二和第三信号被同步; 调整所述第一RF源信号和所述第二或第三RF偏置信号中的至少一个之间的相位差，以控制所述等离子体中的等离子体或电荷积聚中的等离子体离子密度不均匀性中的至少一个; 并用等离子体蚀刻电介质层。