公开(公告)号：US20030050724A1

公开(公告)日：2003-03-13

申请号：US09949414

申请日：2001-09-05

申请人： Applied Materials, Inc.

发明人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

IPC分类号： G06F019/00 ,  C23C016/00

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

摘要： A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

摘要翻译： 提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。 将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。 含氟气体的流量与含硅气体的流量比大于0.65。 通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。 以大于0.8W / cm 2且小于2.4W / cm 2的偏压功率密度对处理室中的衬底施加偏压。 使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。