公开(公告)号：US20030050724A1

公开(公告)日：2003-03-13

申请号：US09949414

申请日：2001-09-05

申请人： Applied Materials, Inc.

发明人： Hichem M'Saad ,  Chad Peterson ,  Zhuang Li ,  Anchuan Wang ,  Farhad Moghadam

IPC分类号： G06F019/00 ,  C23C016/00

CPC分类号： H01L21/02131 ,  C23C16/401 ,  H01L21/0217 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02274 ,  H01L21/31629

摘要： A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.

摘要翻译： 提供了一种用于在不影响硬度和压缩应力的机械性能的情况下形成具有较低介电常数的HDP-CVD的氟化硅酸盐玻璃层的方法。 将包含含硅气体，含氧气体和含氟气体的气体混合物提供到处理室。 含氟气体的流量与含硅气体的流量比大于0.65。 通过施加功率密度小于12W / cm 2的源RF功率，从气体混合物产生高密度等离子体。 以大于0.8W / cm 2且小于2.4W / cm 2的偏压功率密度对处理室中的衬底施加偏压。 使用高密度等离子体将氟化硅酸盐玻璃层沉积在基板上。

公开(公告)号：US20040245091A1

公开(公告)日：2004-12-09

申请号：US10456611

申请日：2003-06-04

申请人： Applied Materials, Inc.

发明人： M Ziaul Karim ,  Bikram Kapoor ,  Anchuan Wang ,  DongQing Li ,  Katsunary Ozeki ,  Manoj Vellaikal ,  Zhuang Li

IPC分类号： C23C014/00 ,  C23C014/32 ,  C25B009/00 ,  C25B011/00

CPC分类号： H01L21/31612 ,  C23C16/045 ,  C23C16/401 ,  C23C16/56 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31116 ,  H01L21/76837

摘要： Abstract of the Disclosure A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.

摘要翻译： 公开的摘要使用HDP-CVD沉积，蚀刻和沉积步骤的循环来提供间隙填充方法。 在第一沉积步骤期间的流体气体包括诸如He的惰性气体，但在剩余沉积步骤期间包括H 2。 在第一沉积步骤期间流动气体的较高的平均分子量提供了一些限定在蚀刻步骤期间保护它们的间隙的结构。 在剩余沉积步骤期间流动气体的较低平均分子量具有降低的溅射特性，并且在填充间隙的剩余部分时是有效的。

公开(公告)号：US20040079118A1

公开(公告)日：2004-04-29

申请号：US10279366

申请日：2002-10-23

申请人： Applied Materials Inc ,  A Delaware Corporation

发明人： Hichem M'Saad ,  Anchuan Wang ,  Sang Ahn

IPC分类号： C03B037/018 ,  C03C025/00 ,  C03B037/07 ,  G01N021/00 ,  G06F019/00

CPC分类号： G02B6/132 ,  C23C16/401 ,  C23C16/505 ,  G02B2006/12169 ,  G02B2006/12176

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.

摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 在一个实施例中，本发明提供了一种在衬底的下包层上形成PSG光波导的方法，该方法包括使用包括硅源气体的等离子体增强化学气相沉积工艺在所述下封层上形成至少一个硅酸盐玻璃光学芯 氧源气体和磷源气体，其中氧源气体和硅源气体的氧原子与硅原子的比例大于20:1。

公开(公告)号：US20030110808A1

公开(公告)日：2003-06-19

申请号：US10020461

申请日：2001-12-14

申请人： APPLIED MATERIALS INC., a Delaware corporation

发明人： Hichem M'Saad ,  Anchuan Wang

IPC分类号： C03B037/07

CPC分类号： C23C16/308 ,  C03C17/02 ,  G02B6/132 ,  G02B6/136 ,  G02B2006/12038 ,  G02B2006/1204 ,  G02B2006/12061 ,  G02B2006/12078 ,  G02B2006/12169

摘要： Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. The method comprises depositing an optical core using a high-density plasma deposition process. The method is particularly advantageous in forming high contrast refractive index optical cores, such as SiOxNy, with drastically reduced propagation loss. In one embodiment the high-density plasma deposition process is an HDP-CVD process. In another embodiment the high-density plasma deposition process is an HDP-ECR process. In one embodiment, a method of forming an optical waveguide comprises forming at least one optical core on an undercladding layer of a substrate using a high-density plasma deposition process.

摘要翻译： 本发明的实施例提供了用于在衬底上制造低传播损耗光波导的高度均匀的低成本生产有价值的解决方案。 该方法包括使用高密度等离子体沉积工艺沉积光学芯。 该方法特别有利于形成高对比度折射率光学芯，例如SiO x N y，具有显着降低的传播损耗。 在一个实施例中，高密度等离子体沉积工艺是HDP-CVD工艺。 在另一个实施例中，高密度等离子体沉积工艺是HDP-ECR工艺。 在一个实施例中，形成光波导的方法包括使用高密度等离子体沉积工艺在衬底的底层上形成至少一个光学芯。

公开(公告)号：US20040224090A1

公开(公告)日：2004-11-11

申请号：US10435296

申请日：2003-05-09

申请人： Applied Materials, Inc.

发明人： Padmanabhan Krishnaraj ,  Bruno Geoffrion ,  Michael S. Cox ,  Lin Zhang ,  Bikram Kapoor ,  Anchuan Wang ,  Zhenjiang Cui

IPC分类号： H05H001/24 ,  B05D003/12 ,  C23C016/00

CPC分类号： C23C16/45502 ,  C23C16/45591 ,  C23C16/56

摘要： A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.

摘要翻译： 沉积和抛光步骤的组合用于在步骤组合之后改进膜的均匀性。 通过在衬底上变化的工艺来进行沉积和抛光。 不同沉积和蚀刻速率的组合导致在膜被抛光之后基本上是平面的膜。 在一些情况下，控制两个过程之一的变化比另一个更容易，因此可控制过程被调整以适应由较不可控过程引入的不均匀性。

公开(公告)号：US20040079728A1

公开(公告)日：2004-04-29

申请号：US10660813

申请日：2003-09-12

申请人： APPLIED MATERIALS, INC.

发明人： Hemant P. Mungekar ,  Anjana M. Patel ,  Manoj Vellaikal ,  Anchuan Wang ,  Bikram Kapoor

IPC分类号： C23F001/00

CPC分类号： C23C16/045 ,  C23C16/401 ,  C23C16/505 ,  H01L21/02129 ,  H01L21/02131 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/31612 ,  H01L21/31625 ,  H01L21/31633

摘要： A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.

摘要翻译： 将膜沉积在设置在基板处理室中的基板上。 衬底具有形成在相邻的凸起表面之间的沟槽。 膜的第一部分通过化学气相沉积从流入处理室的第一气态混合物沉积在衬底上。 此后，通过使具有卤素前体，氢前体和氧前体的蚀刻剂气体流入处理室来蚀刻第一部分。 此后，膜的第二部分通过化学气相沉积从流过处理室的第二气态混合物沉积在衬底上。