公开(公告)号：US20230122134A1

公开(公告)日：2023-04-20

申请号：US17505194

申请日：2021-10-19

Applicant: Applied Materials, Inc.

Inventor： Changling Li ,  Lai Zhao ,  Gaku Furuta ,  Soo Young Choi ,  Robin L. Tiner ,  David Atchley ,  Ganesh Babu Chandrasekaran

IPC: H01J37/32 ,  B23B35/00 ,  C23C16/455 ,  C23C16/50

Abstract: A diffuser includes a front-side gradient surface formed from a diffuser block, a back-side gradient surface formed from the diffuser block, and opening structures formed from the front-side gradient surface to the back-side gradient surface. Each opening structure includes a conical opening having a first end along the front-side gradient surface and a second end corresponding to an apex at a depth within the diffuser block, and a cylindrical opening formed from the depth to the back-side gradient surface. The opening structures are arranged in rows including a first set of rows and a second set of rows alternately positioned along a length of the diffuser block.

公开(公告)号：US20250046578A1

公开(公告)日：2025-02-06

申请号：US18915480

申请日：2024-10-15

Applicant: Applied Materials, Inc.

Inventor： Changling Li ,  Lai Zhao ,  Gaku Furuta ,  Soo Young Choi ,  Robin L. Tiner ,  David Atchley ,  Ganesh Babu Chandrasekaran

IPC: H01J37/32 ,  B23B35/00 ,  C23C16/455 ,  C23C16/50

Abstract: A method can include removing material from a first side of a diffuser block to form a back-side gradient surface of a diffuser, wherein the back-side gradient surface is a first concave surface, after removing the material from the first side, removing material from a second side of the diffuser block to form a front-side gradient surface of the diffuser, wherein the front-side gradient surface is a second concave surface, and forming a plurality of opening structures through the front-side gradient surface to the back-side gradient surface.

公开(公告)号：US11217443B2

公开(公告)日：2022-01-04

申请号：US16676097

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC: H01L21/311 ,  H01L21/02 ,  H01J37/32 ,  C23C16/34 ,  C23C16/56

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.

公开(公告)号：US12136538B2

公开(公告)日：2024-11-05

申请号：US17505194

申请日：2021-10-19

Applicant: Applied Materials, Inc.

Inventor： Changling Li ,  Lai Zhao ,  Gaku Furuta ,  Soo Young Choi ,  Robin L. Tiner ,  David Atchley ,  Ganesh Babu Chandrasekaran

IPC: H01J37/32 ,  B23B35/00 ,  C23C16/455 ,  C23C16/50

Abstract: A diffuser includes a front-side gradient surface formed from a diffuser block, a back-side gradient surface formed from the diffuser block, and opening structures formed from the front-side gradient surface to the back-side gradient surface. Each opening structure includes a conical opening having a first end along the front-side gradient surface and a second end corresponding to an apex at a depth within the diffuser block, and a cylindrical opening formed from the depth to the back-side gradient surface. The opening structures are arranged in rows including a first set of rows and a second set of rows alternately positioned along a length of the diffuser block.

公开(公告)号：US10950430B2

公开(公告)日：2021-03-16

申请号：US16444865

申请日：2019-06-18

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Deenesh Padhi ,  Changling Li ,  Gregory M. Amico ,  Sanjay G. Kamath

IPC: H01L21/02 ,  H01L21/311 ,  H01L21/306 ,  H01L21/3065

Abstract: Embodiments of the present disclosure relate to methods for in-situ deposition and treatment of a thin film for improved step coverage. In one embodiment, the method for processing a substrate is provided. The method includes forming a dielectric layer on patterned features of the substrate by exposing the substrate to a gas mixture of a first precursor and a second precursor simultaneously with plasma present in a process chamber, wherein the plasma is formed by a first pulsed RF power, exposing the dielectric layer to a first plasma treatment using a gas mixture of nitrogen and helium in the process chamber, and performing a plasma etch process by exposing the dielectric layer to a plasma formed from a gas mixture of a fluorine-containing precursor and a carrier gas, wherein the plasma is formed in the process chamber by a second pulsed RF power.

公开(公告)号：US20200176241A1

公开(公告)日：2020-06-04

申请号：US16676097

申请日：2019-11-06

Applicant: Applied Materials, Inc.

Inventor： Vinayak Veer Vats ,  Hang Yu ,  Philip Allan Kraus ,  Sanjay G. Kamath ,  William John Durand ,  Lakmal Charidu Kalutarage ,  Abhijit B. Mallick ,  Changling Li ,  Deenesh Padhi ,  Mark Joseph Saly ,  Thai Cheng Chua ,  Mihaela A. Balseanu

IPC: H01L21/02 ,  H01J37/32 ,  H01L21/311 ,  C23C16/34 ,  C23C16/56

Abstract: Embodiments disclosed herein include methods of forming high quality silicon nitride films. In an embodiment, a method of depositing a film on a substrate may comprise forming a silicon nitride film over a surface of the substrate in a first processing volume with a deposition process, and treating the silicon nitride film in a second processing volume, wherein treating the silicon nitride film comprises exposing the film to a plasma induced by a modular high-frequency plasma source. In an embodiment, a sheath potential of the plasma is less than 100 V, and a power density of the high-frequency plasma source is approximately 5 W/cm2 or greater, approximately 10 W/cm2 or greater, or approximately 20 W/cm2 or greater.