公开(公告)号：US11501972B2

公开(公告)日：2022-11-15

申请号：US16935774

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Vikram M. Bhosle ,  Nicholas P. T. Bateman ,  Timothy J. Miller ,  Jun Seok Lee ,  Deven Raj Mittal

IPC: H01L21/311 ,  H01L21/265 ,  C23C14/02 ,  C23C14/48 ,  H01L21/02

Abstract: An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.

公开(公告)号：US11756796B2

公开(公告)日：2023-09-12

申请号：US17318843

申请日：2021-05-12

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Martin Seamons ,  Shan Tang ,  Qi Gao ,  Deven Raj Mittal ,  Kyuha Shim

IPC: H01L21/02 ,  H01L21/3115 ,  H01L21/311

CPC classification number: H01L21/31155 ,  H01L21/0234 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02321 ,  H01L21/31116

Abstract: A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

公开(公告)号：US20240006158A1

公开(公告)日：2024-01-04

申请号：US17854456

申请日：2022-06-30

Applicant: Applied Materials, Inc.

Inventor： Vikram M. Bhosle ,  Timothy J. Miller ,  Jun Seok Lee ,  Deven Raj Mittal

IPC: H01J37/32 ,  H01L21/3115 ,  H01L21/66

CPC classification number: H01J37/32412 ,  H01J37/3244 ,  H01J37/32981 ,  H01J37/32697 ,  H01L21/31155 ,  H01L22/26 ,  H01J2237/24585 ,  H01J2237/3365 ,  H01L21/31111

Abstract: A method for reducing a wet etch rate of flowable chemical vapor deposition (FCVD) oxide layers in a semiconductor wafer, the method including performing a plasma doping operation on the semiconductor wafer using a primary dopant gas and a diluent gas adapted to reduce a wet etch rate of the FCVD oxide layer, wherein the dopant gas and the diluent gas are supplied by a gas source of a plasma doping system, wherein the diluent gas is provided in an amount of 0.01%-5% by volume of the total amount of gas supplied by the gas source 36 during the plasma doping operation, and wherein the primary dopant gas is He and the diluent gas is selected from a group including of CH4, CO, CO2, and CF2.

公开(公告)号：US20220028693A1

公开(公告)日：2022-01-27

申请号：US16935774

申请日：2020-07-22

Applicant: Applied Materials, Inc.

Inventor： Vikram M. Bhosle ,  Nicholas P.T. Bateman ,  Timothy J. Miller ,  Jun Seok Lee ,  Deven Raj Mittal

IPC: H01L21/265 ,  H01L21/311 ,  C23C14/48 ,  C23C14/02

Abstract: An apparatus and method of processing a workpiece is disclosed, where a sacrificial capping layer is created on a top surface of a workpiece. That workpiece is then exposed to an ion implantation process, where select species are used to passivate the workpiece. While the implant process is ongoing, radicals and excited species etch the sacrificial capping layer. This reduces the amount of etching that the workpiece experiences. In certain embodiments, the thickness of the sacrificial capping layer is selected based on the total time used for the implant process and the etch rate. The total time used for the implant process may be a function of desired dose, bias voltage, plasma power and other parameters. In some embodiments, the sacrificial capping layer is applied prior to the implant process. In other embodiments, material is added to the sacrificial capping layer during the implant process.

公开(公告)号：US11127601B2

公开(公告)日：2021-09-21

申请号：US16417853

申请日：2019-05-21

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, Jr.

IPC: H01L21/322 ,  H01L21/263

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US20200373170A1

公开(公告)日：2020-11-26

申请号：US16417853

申请日：2019-05-21

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, Jr.

IPC: H01L21/322

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US11545368B2

公开(公告)日：2023-01-03

申请号：US17406183

申请日：2021-08-19

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, Jr.

IPC: H01L21/322 ,  H01L21/263

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.

公开(公告)号：US20220367205A1

公开(公告)日：2022-11-17

申请号：US17318843

申请日：2021-05-12

Applicant: Applied Materials, Inc.

Inventor： Rajesh Prasad ,  Martin Seamons ,  Shan Tang ,  Qi Gao ,  Deven Raj Mittal ,  Kyuha Shim

IPC: H01L21/3115 ,  H01L21/02

Abstract: A method may include providing a substrate having, on a first surface of the substrate, a low dielectric constant layer characterized by a layer thickness. The method may include heating the substrate to a substrate temperature in a range of 200° C. to 550° C.; and directing an ion implant treatment to the low dielectric constant layer, while the substrate temperature is in the range of 200° C. to 550° C. As such, the ion implant treatment may include implanting a low weight ion species, at an ion energy generating an implant depth equal to 40% to 175% of the layer thickness.

公开(公告)号：US20210384041A1

公开(公告)日：2021-12-09

申请号：US17406183

申请日：2021-08-19

Applicant: Applied Materials, Inc.

Inventor： Cuiyang Wang ,  Timothy J. Miller ,  Jun Seok Lee ,  Il-Woong Koo ,  Deven Raj Mittal ,  Peter G. Ryan, JR.

IPC: H01L21/322 ,  H01L21/263

Abstract: A method of processing and passivating an implanted workpiece is disclosed, wherein, after passivation, the fugitive emissions of the workpiece are reduced to acceptably low levels. This may be especially beneficial when phosphorus, arsine, germane or another toxic species is the dopant being implanted into the workpiece. In one embodiment, a sputtering process is performed after the implantation process. This sputtering process is used to sputter the dopant at the surface of the workpiece, effectively lowering the dopant concentration at the top surface of the workpiece. In another embodiment, a chemical etching process is performed to lower the dopant concentration at the top surface. After this sputtering or chemical etching process, a traditional passivation process can be performed.