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公开(公告)号:US20240035196A1
公开(公告)日:2024-02-01
申请号:US17874142
申请日:2022-07-26
Applicant: Applied Materials, Inc.
Inventor: Yi-Chiau HUANG , Eric DAVEY
CPC classification number: C30B25/186 , B08B5/00 , B08B7/0071 , B08B7/04 , C23C16/0236 , H01L21/02068
Abstract: A method includes performing an etch process, including supplying a first process gas and a second process gas onto a surface of a substrate on a substrate support within a processing volume of a processing chamber for a first time duration, wherein the first process gas comprises fluorine-containing gas, and the second process gas comprises nitrogen-containing gas, and performing an anneal process to sublimate by-products formed on the surface of the substrate during the etch process, and supplying the first process gas without supplying the second process gas into the processing volume of the processing chamber for a second time duration.
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公开(公告)号:US20180207770A1
公开(公告)日:2018-07-26
申请号:US15875867
申请日:2018-01-19
Applicant: Applied Materials, Inc.
Inventor: Robert D. TOLLES , Gregory E. MENK , Eric DAVEY , You WANG , Huyen Karen TRAN , Fred C. REDEKER , Veera Raghava Reddy KAKIREDDY , Ekaterina MIKHAYLICHENKO , Jay GURUSAMY
Abstract: A method and apparatus for polishing a substrate that includes a polishing article comprising a polymeric sheet having a raised surface texture, which is formed on the surface of the polymeric sheet is provided. According to one or more implementations of the present disclosure, an advanced polishing article has been developed, which does not require abrasive pad conditioning. In some implementations of the present disclosure, the advanced polishing article comprises a polymeric sheet having a polishing surface with a raised surface texture or “micro-features” and/or a plurality of grooves or “macro-features” formed in the polishing surface. In some implementations, the raised surface texture is embossed, etched, machined or otherwise formed in the polishing surface prior to installing and using the advanced polishing article in a polishing system. In one implementation, the raised features have a height within one order of magnitude of the features removed from the substrate during polishing.
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