公开(公告)号：US20160133563A1

公开(公告)日：2016-05-12

申请号：US14931417

申请日：2015-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： HUA AI ,  JIANG LU ,  AVGERINOS V. GELATOS ,  PAUL F. MA ,  SANG HO YU ,  FENG Q. LIU ,  XINYU FU ,  WEIFENG YE

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76879 ,  C23C16/04 ,  C23C16/06 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

Abstract translation: 本文提供了选择性沉积钴层的方法。 在一些实施例中，用于选择性地沉积钴层的方法包括：将衬底暴露于第一工艺气体以钝化暴露的电介质表面，其中所述衬底包括具有暴露的电介质表面的电介质层和具有暴露的金属表面的金属层; 并且使用热沉积工艺选择性地在暴露的金属表面上沉积钴层。

公开(公告)号：US20200347493A1

公开(公告)日：2020-11-05

申请号：US16701061

申请日：2019-12-02

Applicant: Applied Materials, Inc.

Inventor： FENG Q. LIU ,  Lu Chen ,  Mark Saly ,  Liqi Wu ,  Feng Chen

IPC: C23C16/04 ,  C23C16/40 ,  C23C16/455

Abstract: Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize a blocking compound to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance. Some embodiments utilize an unsaturated hydrocarbon as a blocking compound. Some embodiments utilize a triazole as a blocking compound.