公开(公告)号：US20180012732A1

公开(公告)日：2018-01-11

申请号：US15642002

申请日：2017-07-05

Applicant: APPLIED MATERIALS, INC.

Inventor： DAPING YAO ,  HYMAN W.H. LAM ,  JOHN C. FORSTER ,  JIANG LU ,  CAN XU ,  DIEN-YEH WU ,  PAUL F. MA ,  MEI CHANG

IPC: H01J37/32 ,  C23C16/505 ,  C23C16/513 ,  C23C16/52 ,  C23C16/455 ,  C23C16/06

CPC classification number: H01J37/3244 ,  C23C16/06 ,  C23C16/455 ,  C23C16/45563 ,  C23C16/45572 ,  C23C16/505 ,  C23C16/509 ,  C23C16/513 ,  C23C16/52 ,  H01J2237/002 ,  H01J2237/0213 ,  H01J2237/3321

Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.

公开(公告)号：US20180151424A1

公开(公告)日：2018-05-31

申请号：US15823422

申请日：2017-11-27

Applicant: Applied Materials, Inc.

Inventor： DAPING YAO ,  JIANG LU ,  CAN XU ,  PAUL F. MA ,  MEI CHANG

IPC: H01L21/768

Abstract: In some embodiments, a method of forming a cobalt layer on a substrate disposed in a process chamber, includes: (a) exposing the substrate to a first process gas comprising a cobalt precursor and a hydrogen containing gas to grow a smooth cobalt layer on a first surface of the substrate and on sidewalls and a bottom surface of a feature formed in the first surface of the substrate; (b) purging the first process gas from the process chamber; and (c) annealing the substrate in a hydrogen atmosphere to fill in voids within the cobalt layer to form a void-free cobalt layer. In some embodiments, plasma treating the substrate in gas under low pressure and/or thermally baking the substrate in gas in an atmosphere under a low pressure, may be performed prior to anneal.

公开(公告)号：US20160133563A1

公开(公告)日：2016-05-12

申请号：US14931417

申请日：2015-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： HUA AI ,  JIANG LU ,  AVGERINOS V. GELATOS ,  PAUL F. MA ,  SANG HO YU ,  FENG Q. LIU ,  XINYU FU ,  WEIFENG YE

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76879 ,  C23C16/04 ,  C23C16/06 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

Abstract translation: 本文提供了选择性沉积钴层的方法。 在一些实施例中，用于选择性地沉积钴层的方法包括：将衬底暴露于第一工艺气体以钝化暴露的电介质表面，其中所述衬底包括具有暴露的电介质表面的电介质层和具有暴露的金属表面的金属层; 并且使用热沉积工艺选择性地在暴露的金属表面上沉积钴层。

公开(公告)号：US20200020509A1

公开(公告)日：2020-01-16

申请号：US16578602

申请日：2019-09-23

Applicant: APPLIED MATERIALS, INC.

Inventor： DAPING YAO ,  HYMAN W.H. LAM ,  JOHN C. FORSTER ,  JIANG LU ,  CAN XU ,  DIEN-YEH WU ,  PAUL F. MA ,  MEI CHANG

IPC: H01J37/32 ,  C23C16/513 ,  C23C16/505 ,  C23C16/52 ,  C23C16/455

Abstract: Embodiments of a gas delivery apparatus for use in a radio frequency (RF) processing apparatus are provided herein. In some embodiments, a gas delivery apparatus for use in a radio frequency (RF) processing apparatus includes: a conductive gas line having a first end and a second end; a first flange coupled to the first end; a second flange coupled to the second end, wherein the conductive gas line extends through and between the first and second flanges; and a block of ferrite material surrounding the conductive gas line between the first and second flanges.