公开(公告)号：US20160035619A1

公开(公告)日：2016-02-04

申请号：US14815156

申请日：2015-07-31

Applicant: APPLIED MATERIALS, INC.

Inventor： SANG HO YU ,  MEI CHANG

IPC: H01L21/768 ,  C23C16/455 ,  C23C16/46 ,  C23C16/458

CPC classification number: C23C16/46 ,  C23C16/18 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/56 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76862 ,  H01L21/76877 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate; (c) rotating the substrate having the deposited cobalt layer to a second processing position; and (d) treating the substrate at the second processing position to remove contaminants from the cobalt layer.

Abstract translation: 本文提供了在基板上形成的特征中沉积钴层的方法和装置。 在一些实施例中，在衬底上沉积钴层的方法包括：（a）向可在两个处理位置之间旋转的衬底支撑件提供衬底; （b）在第一处理位置将基底暴露于含钴前体，以在基底顶部沉积钴层; （c）将具有沉积的钴层的衬底旋转到第二处理位置; 和（d）在第二处理位置处理基底以从钴层去除污染物。

公开(公告)号：US20160133563A1

公开(公告)日：2016-05-12

申请号：US14931417

申请日：2015-11-03

Applicant: APPLIED MATERIALS, INC.

Inventor： HUA AI ,  JIANG LU ,  AVGERINOS V. GELATOS ,  PAUL F. MA ,  SANG HO YU ,  FENG Q. LIU ,  XINYU FU ,  WEIFENG YE

IPC: H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76879 ,  C23C16/04 ,  C23C16/06 ,  H01L21/02068 ,  H01L21/28562 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76834 ,  H01L21/76849 ,  H01L21/76883 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods for selectively depositing a cobalt layer are provided herein. In some embodiments, methods for selectively depositing a cobalt layer include: exposing a substrate to a first process gas to passivate an exposed dielectric surface, wherein the substrate comprises a dielectric layer having an exposed dielectric surface and a metal layer having an exposed metal surface; and selectively depositing a cobalt layer atop the exposed metal surface using a thermal deposition process.

Abstract translation: 本文提供了选择性沉积钴层的方法。 在一些实施例中，用于选择性地沉积钴层的方法包括：将衬底暴露于第一工艺气体以钝化暴露的电介质表面，其中所述衬底包括具有暴露的电介质表面的电介质层和具有暴露的金属表面的金属层; 并且使用热沉积工艺选择性地在暴露的金属表面上沉积钴层。

公开(公告)号：US20150294906A1

公开(公告)日：2015-10-15

申请号：US14300773

申请日：2014-06-10

Applicant: APPLIED MATERIALS, INC.

Inventor： LIQI WU ,  SANG HO YU ,  KAZUYA DAITO ,  KIE JIN PARK ,  KAI WU ,  DAVID THOMPSON

IPC: H01L21/768

CPC classification number: H01L21/76877 ,  C23C16/045 ,  C23C16/06 ,  C23C16/45536 ,  H01L21/28556 ,  H01L21/76843 ,  H01L21/76876

Abstract: Methods for forming metal organic tungsten for middle-of-the-line (MOL) applications are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate to a process chamber, wherein the substrate includes a feature formed in a first surface of a dielectric layer of the substrate; exposing the substrate to a plasma formed from a first gas comprising a metal organic tungsten precursor to form a tungsten barrier layer atop the dielectric layer and within the feature, wherein a temperature of the process chamber during formation of the tungsten barrier layer is less than about 225 degrees Celsius; and depositing a tungsten fill layer over the tungsten barrier layer to fill the feature to the first surface.

Abstract translation: 本文提供了用于生产中间线（MOL）应用的金属有机钨的方法。 在一些实施例中，处理衬底的方法包括向处理室提供衬底，其中衬底包括形成在衬底的电介质层的第一表面中的特征; 将衬底暴露于由包括金属有机钨前体的第一气体形成的等离子体，以在该介电层的顶部和特征内形成钨阻挡层，其中在形成钨阻挡层期间处理室的温度小于约 225摄氏度; 以及在所述钨阻挡层上沉积钨填充层以将所述特征填充到所述第一表面。