公开(公告)号：US20220344339A1

公开(公告)日：2022-10-27

申请号：US17564486

申请日：2021-12-29

Applicant: Applied Materials, Inc.

Inventor： Sony VARGHESE ,  Fredrick David FISHBURN

IPC: H01L27/108

Abstract: Methods of forming a three-dimensional dynamic random-access memory (3D DRAM) structure are provided herein. In some embodiments, a method of forming a 3D DRAM structure includes forming at least one wordline feature in a first stack comprising a plurality of crystalline silicon (c-Si) layers alternating with a plurality of crystalline silicon germanium (c-SiGe) layers, wherein the wordline feature comprises: vertically etching a first pattern of holes; filling the first pattern of holes with a silicon germanium fill; vertically etching a plurality of isolation slots through the first stack; filling the plurality of isolation slots with a dielectric material to form an isolation layer between the silicon germanium fill; etching the silicon germanium fill and the plurality of c-SiGe layers to form a plurality of gate silicon channels comprising portions of the plurality of c-Si layers; and depositing a layer of conductive material that wraps around the plurality of gate silicon channels.

公开(公告)号：US20250113522A1

公开(公告)日：2025-04-03

申请号：US18899327

申请日：2024-09-27

Applicant: Applied Materials, Inc.

Inventor： Ruiying HAO ,  Fredrick David FISHBURN ,  Raghuveer Satya MAKALA ,  Thomas John KIRSCHENHEITER ,  Balasubramanian PRANATHARTHIHARAN

IPC: H01L29/775 ,  H01L21/02 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: Three-dimensional (3D) memory structures and methods of formation of same are provided herein. In some embodiments, a 3D memory fabrication structure includes: a base silicon (Si) layer; a silicon germanium (SiGe) layer disposed above the base Si layer; and a doped silicon (Si) layer disposed on at least one side of the SiGe layer, wherein the doped Si layer contains a dopant that is at least one of carbon (C) or boron (B).

公开(公告)号：US20220285364A1

公开(公告)日：2022-09-08

申请号：US17680993

申请日：2022-02-25

Applicant: Applied Materials, Inc.

Inventor： Fredrick David FISHBURN

IPC: H01L27/108

Abstract: Methods for forming 3D DRAM leverage L-pad formations to increase memory density. Methods may include etching a substrate to form two Si walls oriented parallel to each other and forming a space therebetween, depositing a plurality of alternating Si layers and SiGe layers using epitaxial growth processes to form horizontal deposition layers on the space between the two Si walls and vertical deposition layers on sidewalls of the two Si walls, depositing a CMP stop layer on the substrate, planarizing the substrate to the CMP stop layer, removing a portion of a top of the two Si walls and forming an L-pad formation, deep etching a pattern of holes into the space between the two Si walls in horizontal portions of the plurality of alternating Si layers and SiGe layers, and forming vertical wordline structures from the pattern of holes in the horizontal portions.

公开(公告)号：US20220285362A1

公开(公告)日：2022-09-08

申请号：US17674353

申请日：2022-02-17

Applicant: Applied Materials, Inc.

Inventor： Fredrick David FISHBURN ,  Arvind KUMAR ,  Sony VARGHESE ,  Chang Seok KANG ,  Sung-Kwan KANG ,  Tomohiko KITAJIMA

IPC: H01L27/108 ,  G11C5/10

Abstract: Methods for forming three-dimensional dynamic random-access memory (3D DRAM) structures that leverage a grid pattern of high aspect ratio holes to form subsequent features of the 3D DRAM. The method may include depositing alternating layers of crystalline silicon (c-Si) and crystalline silicon germanium (c-SiGe) using an heteroepitaxy process onto a substrate and HAR etching of a pattern of holes into the substrate. The holes configured to provide chemistry access to laterally etch or deposit materials to form 3D DRAM features without requiring subsequent HAR etching of holes to form the 3D DRAM features.