公开(公告)号：US11094511B2

公开(公告)日：2021-08-17

申请号：US16189440

申请日：2018-11-13

Applicant: Applied Materials, Inc.

Inventor： Changhun Lee ,  Michael D. Willwerth ,  Valentin N. Todorow ,  Hean Cheal Lee ,  Hun Sang Kim

IPC: H01J37/32 ,  G03F7/42

Abstract: Embodiments of the present disclosure generally provide an apparatus and methods for processing a substrate. More particularly, embodiments of the present disclosure provide a processing chamber having an enhanced processing efficiency at an edge of a substrate disposed in the processing chamber. In one embodiment, a processing chamber comprises a chamber body defining an interior processing region in a processing chamber, a showerhead assembly disposed in the processing chamber, wherein the showerhead assembly has multiple zones with an aperture density higher at an edge zone than at a center zone of the showerhead assembly, a substrate support assembly disposed in the interior processing region of the processing chamber, and a focus ring disposed on an edge of the substrate support assembly and circumscribing the substrate support assembly, wherein the focus ring has a step having a sidewall height substantially similar to a bottom width.

公开(公告)号：US09287124B2

公开(公告)日：2016-03-15

申请号：US14474841

申请日：2014-09-02

Applicant: Applied Materials, Inc.

Inventor： Byungkook Kong ,  Jun Wan Kim ,  Wonmo Ahn ,  Jeong Hyun Yoo ,  Hun Sang Kim

IPC: H01L21/302 ,  H01L21/033 ,  H01L21/311 ,  H01L21/683 ,  H01J37/32

CPC classification number: H01L21/0332 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/334 ,  H01L21/31122 ,  H01L21/6831

Abstract: In one embodiment, a method is proposed for etching a boron dope hardmask layer. The method includes flowing a process gas comprising at least CH4 into a processing chamber. Forming a plasma in the process chamber from the process gas and etching the boron doped hardmask layer in the presence of the plasma. In other embodiments, the process gas utilized to etch the boron doped hardmask layer includes CH4, Cl2, SF6 and O2.

Abstract translation: 在一个实施例中，提出了一种用于蚀刻硼掺杂硬掩模层的方法。 该方法包括使包含至少CH 4的处理气体流入处理室。 在处理气体中形成等离子体，并在等离子体存在下蚀刻硼掺杂的硬掩模层。 在其他实施方案中，用于蚀刻硼掺杂的硬掩模层的工艺气体包括CH 4，Cl 2，SF 6和O 2。

公开(公告)号：US10770329B2

公开(公告)日：2020-09-08

申请号：US16213594

申请日：2018-12-07

Applicant: Applied Materials, Inc.

Inventor： Hun Sang Kim ,  Michael D. Willwerth

IPC: H01L21/683 ,  H01J37/32 ,  C23C16/458 ,  H01L21/67

Abstract: A gas flow is described to reduce condensation with a substrate processing chuck. In one example, a workpiece holder in the chamber having a puck to carry the workpiece for fabrication processes, a top plate thermally coupled to the puck, a cooling plate fastened to and thermally coupled to the top plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate, a base plate fastened to the cooling plate opposite the puck, and a dry gas inlet of the base plate to supply a dry gas under pressure to a space between the base plate and the cooling plate to drive ambient air from between the base plate and the cooling plate.

公开(公告)号：US09425058B2

公开(公告)日：2016-08-23

申请号：US14340110

申请日：2014-07-24

Applicant: Applied Materials, Inc.

Inventor： Hun Sang Kim ,  Jinhan Choi ,  Shinichi Koseki

IPC: H01L21/311 ,  H01L21/302 ,  H01L21/02 ,  H01L21/308

CPC classification number: H01L21/3085 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: Methods of patterning a blanket layer (a target etch layer) on a substrate are described. The methods involve multiple patterning steps of a mask layer several layers above the target etch layer. The compound pattern, made from multiple patterning steps, is later transferred in one set of operations through the stack to save process steps.

Abstract translation: 描述了在衬底上图案化覆盖层（目标蚀刻层）的方法。 该方法涉及在目标蚀刻层上方几层的掩模层的多个图案化步骤。 由多个图案化步骤制成的复合图案随后通过堆叠转移到一组操作中以节省处理步骤。

公开(公告)号：US20160027654A1

公开(公告)日：2016-01-28

申请号：US14340110

申请日：2014-07-24

Applicant: Applied Materials, Inc.

Inventor： Hun Sang Kim ,  Jinhan Choi ,  Shinichi Koseki

IPC: H01L21/308

CPC classification number: H01L21/3085 ,  H01L21/0337 ,  H01L21/3081 ,  H01L21/31144 ,  H01L21/32139

Abstract: Methods of patterning a blanket layer (a target etch layer) on a substrate are described. The methods involve multiple patterning steps of a mask layer several layers above the target etch layer. The compound pattern, made from multiple patterning steps, is later transferred in one set of operations through the stack to save process steps.

Abstract translation: 描述了在衬底上图案化覆盖层（目标蚀刻层）的方法。 该方法涉及在目标蚀刻层上方几层的掩模层的多个图案化步骤。 由多个图案化步骤制成的复合图案随后通过堆叠转移到一组操作中以节省处理步骤。

公开(公告)号：US10186444B2

公开(公告)日：2019-01-22

申请号：US14663913

申请日：2015-03-20

Applicant: Applied Materials, Inc.

Inventor： Hun Sang Kim ,  Michael D. Willwerth

IPC: H01L21/67 ,  H01L21/683 ,  H01J37/32 ,  C23C16/458

Abstract: A gas flow is described to reduce condensation with a substrate processing chuck. In one example, a workpiece holder in the chamber having a puck to carry the workpiece for fabrication processes, a top plate thermally coupled to the puck, a cooling plate fastened to and thermally coupled to the top plate, the cooling plate having a cooling channel to carry a heat transfer fluid to transfer heat from the cooling plate, a base plate fastened to the cooling plate opposite the puck, and a dry gas inlet of the base plate to supply a dry gas under pressure to a space between the base plate and the cooling plate to drive ambient air from between the base plate and the cooling plate.

公开(公告)号：US09627216B2

公开(公告)日：2017-04-18

申请号：US14506208

申请日：2014-10-03

Applicant: APPLIED MATERIALS, INC.

Inventor： Byungkook Kong ,  Hoon Sang Lee ,  Jinsu Kim ,  Ho Jeong Kim ,  Xiaosong Ji ,  Hun Sang Kim ,  Jinhan Choi

IPC: H01L21/3065 ,  H01L21/762 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01L21/30655 ,  H01L21/67253 ,  H01L21/76224

Abstract: Embodiments of methods for forming features in a silicon containing layer of a substrate disposed on a substrate support are provided herein. In some embodiments, a method for forming features in a silicon containing layer of a substrate disposed on a substrate support in a processing volume of a process chamber includes: exposing the substrate to a first plasma formed from a first process gas while providing a bias power to the substrate support, wherein the first process gas comprises one or more of a chlorine-containing gas or a bromine containing gas; and exposing the substrate to a second plasma formed from a second process gas while no bias power is provided to the substrate support, wherein the second process gas comprises one or more of an oxygen-containing gas or nitrogen gas, and wherein a source power provided to form the first plasma and the second plasma is continuously provided.