公开(公告)号：US20190043723A1

公开(公告)日：2019-02-07

申请号：US16035994

申请日：2018-07-16

Applicant: Applied Materials, Inc.

Inventor： Hailong ZHOU ,  Yangchung LEE ,  Chain LEE ,  Hui SUN ,  Jonathan Sungehul KIM

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/311

Abstract: Implementations described herein generally relate to an etching process for etching materials with high selectivity. In one implementation, a method of etching a gate material to form features in the gate material is provided. The method includes (a) exposing a cobalt mask layer to a fluorine-containing gas mixture in a first mode to form a passivation film on the cobalt mask layer. The cobalt mask layer exposes a portion of a gate material disposed on a substrate. The method further comprises (b) exposing the portion of the gate material to an etching gas mixture in a second mode to etch the portion of the gate material. The portion of the gate material is etched through openings defined in the cobalt mask layer and the portion of the gate material is etched at a greater rate than the cobalt mask layer having the passivation layer disposed thereon.

公开(公告)号：US20160293420A1

公开(公告)日：2016-10-06

申请号：US15043183

申请日：2016-02-12

Applicant: Applied Materials, Inc.

Inventor： Dai-Wen TANG ,  Hui SUN ,  Chung LIU ,  Benjamin SCHWARZ

IPC: H01L21/033 ,  H01L21/32 ,  H01L21/311

CPC classification number: H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31122 ,  H01L21/32137 ,  Y10S438/947

Abstract: Embodiments herein provide apparatus and methods for performing an etching process on a spacer layer with good profile control in multiple patterning processes. In one embodiment, a method for patterning a spacer layer during a multiple patterning process includes conformally forming a spacer layer on an outer surface of a patterned structure disposed on a substrate, wherein the patterned structure has having a first group of openings defined therebetween and etching the spacer layer disposed on the substrate while forming an oxidation layer on the spacer layer.

Abstract translation: 本文的实施例提供了用于在多个图案化工艺中对具有良好轮廓控制的间隔层进行蚀刻工艺的装置和方法。 在一个实施例中，用于在多次图案化工艺期间图案化间隔层的方法包括在设置在衬底上的图案化结构的外表面上共形形成间隔层，其中图案化结构具有限定在其间的第一组开口和蚀刻 所述间隔层设置在所述衬底上，同时在所述间隔层上形成氧化层。