公开(公告)号：US20250095984A1

公开(公告)日：2025-03-20

申请号：US18370536

申请日：2023-09-20

Applicant: Applied Materials, Inc.

Inventor： Sonam Dorje Sherpa ,  Iljo Kwak ,  Kenji Takeshita ,  Alok Ranjan

IPC: H01L21/02 ,  H01L21/306

Abstract: Methods of semiconductor processing may include providing a silicon-containing precursor and an oxygen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. A feature may extend through one or more layers of material disposed on the substrate. The methods may include forming plasma effluents of the silicon-containing precursor and the oxygen-containing precursor. The methods may include contacting the substrate with the plasma effluents of the silicon-containing precursor and the oxygen-containing precursor. The contacting may form a silicon-and-oxygen-containing material on at least a bottom portion of the feature. A temperature in the processing region may be maintained at less than or about 0° C.

公开(公告)号：US20250022714A1

公开(公告)日：2025-01-16

申请号：US18221505

申请日：2023-07-13

Applicant: Applied Materials, Inc.

Inventor： Sonam Dorje Sherpa ,  Iljo Kwak ,  Kenji Takeshita ,  Alok Ranjan

IPC: H01L21/3065 ,  C09K13/08

Abstract: Exemplary semiconductor processing methods may include flowing a fluorine-containing precursor and a hydrogen-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be positioned within the processing region. The substrate may include a trench formed through stacked layers including alternating layers of silicon nitride and silicon oxide. The methods may include forming plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor and contacting the substrate with the plasma effluents of the fluorine-containing precursor and the hydrogen-containing precursor to form a fluorinated portion of the stacked layers. The methods may include flowing an inert precursor into the processing region, forming plasma effluents of the inert precursor, and contacting the substrate with the plasma effluents of the inert precursor to remove the fluorinated portion of the stacked layers. The methods may be performed at a temperature of less than or about 20° C.

公开(公告)号：US20240096641A1

公开(公告)日：2024-03-21

申请号：US17949083

申请日：2022-09-20

Applicant: Applied Materials, Inc.

Inventor： Hailong Zhou ,  Iljo Kwak ,  Olivier P. Joubert ,  Yu Wen

IPC: H01L21/311 ,  H01J37/32 ,  H01L27/115

CPC classification number: H01L21/31116 ,  H01J37/32146 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32816 ,  H01L27/115 ,  H01J2237/182 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include etching a first portion of a feature in a substrate disposed within a processing region of a semiconductor processing chamber. The first portion of the feature may at least partially extend through one or more layers of material formed on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the carbon-containing precursor. The methods may include forming a carbon-containing material on the substrate. The carbon-containing material may line the first portion of the feature at least partially extending through the one or more layers of material formed on the substrate. The carbon-containing material may be formed in the same chamber where the feature is etched.

公开(公告)号：US11495470B1

公开(公告)日：2022-11-08

申请号：US17244873

申请日：2021-04-29

Applicant: Applied Materials, Inc.

Inventor： Hailong Zhou ,  Sean Kang ,  Kenji Takeshita ,  Rajinder Dhindsa ,  Taehwan Lee ,  Iljo Kwak

IPC: H01L21/311

Abstract: Embodiments of this disclosure include a method of processing a substrate that includes etching a first dielectric material formed on a substrate that is disposed on a substrate supporting surface of a substrate support assembly disposed within a processing region of a plasma processing chamber. The etching process may include delivering a process gas to the processing region, wherein the process gas comprises a first fluorocarbon containing gas and a first process gas, delivering, by use of a radio frequency generator, a radio frequency signal to a first electrode to form a plasma in the processing region, and establishing, by use of a first pulsed-voltage waveform generator, a first pulsed voltage waveform at a biasing electrode disposed within the substrate support assembly. The first pulsed voltage waveform comprises a series of repeating pulsed waveform cycles that each include a first portion that occurs during a first time interval, a second portion that occurs during a second time interval, and a peak-to-peak voltage. The pulsed voltage waveform is substantially constant during at least a portion of the second time interval.