公开(公告)号：US20240096641A1

公开(公告)日：2024-03-21

申请号：US17949083

申请日：2022-09-20

Applicant: Applied Materials, Inc.

Inventor： Hailong Zhou ,  Iljo Kwak ,  Olivier P. Joubert ,  Yu Wen

IPC: H01L21/311 ,  H01J37/32 ,  H01L27/115

CPC classification number: H01L21/31116 ,  H01J37/32146 ,  H01J37/32477 ,  H01J37/32522 ,  H01J37/32816 ,  H01L27/115 ,  H01J2237/182 ,  H01J2237/334

Abstract: Exemplary methods of semiconductor processing may include etching a first portion of a feature in a substrate disposed within a processing region of a semiconductor processing chamber. The first portion of the feature may at least partially extend through one or more layers of material formed on the substrate. The methods may include providing a carbon-containing precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the carbon-containing precursor. The methods may include contacting the substrate with the plasma effluents of the carbon-containing precursor. The methods may include forming a carbon-containing material on the substrate. The carbon-containing material may line the first portion of the feature at least partially extending through the one or more layers of material formed on the substrate. The carbon-containing material may be formed in the same chamber where the feature is etched.