Showerhead having a detachable high resistivity gas distribution plate

    公开(公告)号:US10790120B2

    公开(公告)日:2020-09-29

    申请号:US16800285

    申请日:2020-02-25

    Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a base having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the base, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the base; and a thermal gasket disposed in a gap between the base and gas distribution plate.

    Methods for etching materials used in MRAM applications
    2.
    发明授权
    Methods for etching materials used in MRAM applications 有权
    在MRAM应用中使用的蚀刻材料的方法

    公开(公告)号:US09059398B2

    公开(公告)日:2015-06-16

    申请号:US13750892

    申请日:2013-01-25

    CPC classification number: H01L43/12 G11C11/16 G11C11/161 H01L27/222 H01L43/08

    Abstract: Embodiments of the invention provide methods and apparatus for fabricating magnetic tunnel junction (MTJ) structures on a substrate in magnetoresistive random access memory applications. In one embodiment, a method of forming a MTJ structure on a substrate includes providing a substrate having a insulating tunneling layer disposed between a first and a second ferromagnetic layer disposed on the substrate, wherein the first ferromagnetic layer is disposed on the substrate followed by the insulating tunneling layer and the second ferromagnetic layer sequentially, supplying an ion implantation gas mixture to implant ions into the first ferromagnetic layer exposed by openings defined by the second ferromagnetic layer, and etching the implanted first ferromagnetic layer.

    Abstract translation: 本发明的实施例提供了用于在磁阻随机存取存储器应用中在衬底上制造磁性隧道结(MTJ)结构的方法和装置。 在一个实施例中,在衬底上形成MTJ结构的方法包括提供衬底,其具有设置在设置在衬底上的第一和第二铁磁层之间的绝缘隧道层,其中第一铁磁层设置在衬底上, 绝缘隧道层和第二铁磁层,提供离子注入气体混合物以将离子注入到由第二铁磁层限定的开口暴露的第一铁磁层中,并蚀刻所注入的第一铁磁层。

    Showerhead having a detachable high resistivity gas distribution plate

    公开(公告)号:US10607816B2

    公开(公告)日:2020-03-31

    申请号:US15909118

    申请日:2018-03-01

    Abstract: Embodiments of showerheads having a detachable gas distribution plate are provided herein. In some embodiments, a showerhead for use in a semiconductor processing chamber may include a body having a first side and a second side opposing the first side; a gas distribution plate disposed proximate the second side of the body, wherein the gas distribution plate is formed from a material having an electrical resistivity between about 60 ohm-cm to 90 ohm-cm; a clamp disposed about a peripheral edge of the gas distribution plate to removably couple the gas distribution plate to the body; and a thermal gasket disposed in a gap between the body and gas distribution plate.

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