公开(公告)号：US20160282728A1

公开(公告)日：2016-09-29

申请号：US15080473

申请日：2016-03-24

Applicant: Applied Materials, Inc.

Inventor： Benjamin M. JOHNSTON ,  Thomas L. LAIDIG ,  Jang Fung CHEN ,  John WHITE

IPC: G03F7/20 ,  G01B11/14

CPC classification number: G03F7/70775 ,  G01B11/14 ,  G03F7/70275 ,  G03F7/70733

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for performing photolithography processes. In one embodiment, a system including multiple interferometers for accurately measuring the location of a substrate during operation is provided. The system may include two chucks, and the two chucks are aligned in a first direction. The interferometers are placed along the first direction to measure the location of the substrate with respect to the first direction. The reduced distance between the interferometers and the chuck improves the accuracy of the measurement of the location of the substrate. In another embodiment, mask pattern data is provided to the system, and the mask pattern data is modified based on location and position information of the substrate. By controlling the mask pattern data with the location and position information of the substrate, less positional errors of the pattern formed on the substrate can be achieved.

Abstract translation: 本公开的实施例一般涉及用于执行光刻工艺的装置和方法。 在一个实施例中，提供了一种包括用于在操作期间精确测量衬底的位置的多个干涉仪的系统。 该系统可以包括两个卡盘，并且两个卡盘在第一方向上对齐。 干涉仪沿着第一方向放置以测量衬底相对于第一方向的位置。 干涉仪和卡盘之间的距离减小提高了基板位置的测量精度。 在另一个实施例中，将掩模图案数据提供给系统，并且基于衬底的位置和位置信息修改掩模图案数据。 通过利用基板的位置和位置信息控制掩模图案数据，可以实现在基板上形成的图案的较少的位置误差。

公开(公告)号：US20170168403A1

公开(公告)日：2017-06-15

申请号：US15364748

申请日：2016-11-30

Applicant: Applied Materials, Inc.

Inventor： Benjamin M. JOHNSTON ,  John WHITE ,  Thomas LAIDIG

IPC: G03F7/20

CPC classification number: G03F7/70808 ,  G03F7/70775 ,  G03F7/708 ,  G03F7/70858 ,  G03F7/70866 ,  G03F7/70933 ,  G03F9/00 ,  G03F9/70 ,  G03F9/7049 ,  G03F9/7057 ,  G03F2009/005

Abstract: Embodiments of the present disclosure generally relate to systems and methods for performing photolithography processes. In one embodiment, laminar gas flow is provided inside a photolithography system during operation. With laminar gas flow instead of turbulent gas flow inside the system, accuracy of the measurement of the location of a substrate disposed inside the system is improved due to the improved signal integrity of interferometers.

公开(公告)号：US20180129142A1

公开(公告)日：2018-05-10

申请号：US15867369

申请日：2018-01-10

Applicant: Applied Materials, Inc.

Inventor： Benjamin M. JOHNSTON ,  Thomas L. LAIDIG ,  Jang Fung CHEN ,  John WHITE

IPC: G03F7/20 ,  G01B11/14

CPC classification number: G03F7/70775 ,  G01B11/14 ,  G03F7/70275 ,  G03F7/70733

Abstract: Embodiments of the present disclosure generally relate to apparatus and methods for performing photolithography processes. In one embodiment, a system including multiple interferometers for accurately measuring the location of a substrate during operation is provided. The system may include two chucks, and the two chucks are aligned in a first direction. The interferometers are placed along the first direction to measure the location of the substrate with respect to the first direction. The reduced distance between the interferometers and the chuck improves the accuracy of the measurement of the location of the substrate. In another embodiment, mask pattern data is provided to the system, and the mask pattern data is modified based on location and position information of the substrate. By controlling the mask pattern data with the location and position information of the substrate, less positional errors of the pattern formed on the substrate can be achieved.