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公开(公告)号:US20250105034A1
公开(公告)日:2025-03-27
申请号:US18824614
申请日:2024-09-04
Applicant: Applied Materials, Inc.
Inventor: Justin GAU , Dmitry LUBOMIRSKY
IPC: H01L21/67 , H01L21/687 , H05B3/22
Abstract: Disclosed herein are a pedestal heater and processing chamber containing the same. In one example, a pedestal heater for semiconductor substrate processing includes a heater body, a top cover and a bottom cover. The heater body includes at least one heating element. The top cover is disposed on a top surface of the heater body and has a higher thermal conductivity than the heater body. The bottom cover is disposed at a bottom surface of the heater body. In some examples, lift pin holes disposed through the top cover, the heater body and the bottom cover are aligned to accommodate lift pins.
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公开(公告)号:US20250163607A1
公开(公告)日:2025-05-22
申请号:US18516728
申请日:2023-11-21
Applicant: Applied Materials, Inc.
Inventor: Justin GAU , Shekhar ATHANI , Rahul KOZHIKKALKANDI , Nithin ALEX , Adib KHAN , Qiwei LIANG , Lancelot HUANG , Junghoon KIM , Hyunjun KIM , Douglas A. BUCHBERGER, JR. , Vishwas Kumar PANDEY , Srinivas D. NEMANI , Ellie Y. YIEH , Dmitry LUBOMIRSKY
Abstract: Disclosed herein is a processing chamber for a low temperature epitaxy deposition and components of the same. The processing chamber includes a dome lid coupled with a lid liner via a lid liner separator; a remote plasma source disposed outside the dome lid and operable to energize a process gas; a gas ring disposed under the dome lid and coupled with a gas ring liner via a gas ring liner separator; a showerhead disposed under the gas ring; a susceptor disposed below the showerhead and operable to heat a substrate by conduction; and a side wall disposed under the gas ring and coupled with a wall liner via a wall liner separator. The cleaning method of the processing chamber is also disclosed.
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