ROTATING BIASABLE PEDESTAL AND ELECTROSTATIC CHUCK IN SEMICONDUCTOR PROCESS CHAMBER

    公开(公告)号:US20220319896A1

    公开(公告)日:2022-10-06

    申请号:US17221215

    申请日:2021-04-02

    Abstract: Embodiments of substrate supports are provided herein. In some embodiments, a substrate support for use in a chemical vapor deposition (CVD) chamber includes: a pedestal to support a substrate, wherein the pedestal includes a dielectric plate coupled to a pedestal body; a rotary union coupled to the pedestal, wherein the rotary union includes a stationary housing disposed about a rotor; a drive assembly coupled to the rotary union; a coolant union coupled to the rotary union and having a coolant inlet fluidly coupled to coolant channels disposed in the pedestal via a coolant line; an RF rotary joint coupled to the coolant union and having an RF connector configured to couple the pedestal to an RF bias power source; and an RF conduit that extends from the RF connector to the pedestal through a central opening of the pedestal body to provide RF bias to the pedestal.

    CHAMBER FOR SUBSTRATE BACKSIDE AND BEVEL DEPOSITION

    公开(公告)号:US20250037974A1

    公开(公告)日:2025-01-30

    申请号:US18227226

    申请日:2023-07-27

    Abstract: Disclosed herein is a processing system. The processing system has an upper chamber body and a lower chamber body defining a processing environment. An upper heater is moveably disposed in the upper chamber body. The upper heater has a moveable support and an upper step formed along an outer perimeter. A lower showerhead is fixedly disposed in the lower chamber body. The lower showerhead includes a top surface configured to support a substrate, a lower step disposed along an outer perimeter wherein the substrate is configured to extend from the top surface partially over the lower step. Lift pins are disposed in the lower showerhead and configured to extend through the top surface and support the substrate thereon. Gas holes are disposed in a first zone along the top surface and a second zone on the step and configured to independently flow both a process and non-process gas.

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