公开(公告)号：US20240160117A1

公开(公告)日：2024-05-16

申请号：US18282509

申请日：2021-04-02

Applicant: Applied Materials, Inc.

Inventor： Dmitry LUBOMIRSKY ,  Kyle M. HANSON ,  Douglas A. BUCHBERGER, Jr. ,  Alan L. TSO ,  Rahul KOZHIKKALKANDI ,  Paul R. MCHUGH ,  Jiayi SUN ,  Qiwei LIANG ,  Nithin Thomas ALEX ,  Lancelot HUANG ,  Ellie Y. YIEH

IPC: G03F7/00 ,  G03F7/40

CPC classification number: G03F7/70875 ,  G03F7/40 ,  G03F7/707 ,  G03F7/70758

Abstract: Apparatus and method for substrate processing are described herein. More specifically, the apparatus and method are directed towards apparatus and method for performing a field guided post exposure bake operation on a semiconductor substrate. The apparatus is a processing module (100) and includes an upper portion (102) with an electrode (400) and a base portion (104) which is configured to support a substrate (500) on a substrate support surface (159). The upper portion (102) and the base portion (104) are actuated toward and away from one another using one or more arms (112) and form a process volume (404). The process volume (404) is filled with a process fluid and the processing module (100) is rotated about an axis (A). An electric field is applied to the substrate (500) by the electrode (400) before the process fluid is drained from the process volume (404).

公开(公告)号：US20250163607A1

公开(公告)日：2025-05-22

申请号：US18516728

申请日：2023-11-21

Applicant: Applied Materials, Inc.

Inventor： Justin GAU ,  Shekhar ATHANI ,  Rahul KOZHIKKALKANDI ,  Nithin ALEX ,  Adib KHAN ,  Qiwei LIANG ,  Lancelot HUANG ,  Junghoon KIM ,  Hyunjun KIM ,  Douglas A. BUCHBERGER, JR. ,  Vishwas Kumar PANDEY ,  Srinivas D. NEMANI ,  Ellie Y. YIEH ,  Dmitry LUBOMIRSKY

IPC: C30B25/08 ,  C30B25/12 ,  C30B25/14

Abstract: Disclosed herein is a processing chamber for a low temperature epitaxy deposition and components of the same. The processing chamber includes a dome lid coupled with a lid liner via a lid liner separator; a remote plasma source disposed outside the dome lid and operable to energize a process gas; a gas ring disposed under the dome lid and coupled with a gas ring liner via a gas ring liner separator; a showerhead disposed under the gas ring; a susceptor disposed below the showerhead and operable to heat a substrate by conduction; and a side wall disposed under the gas ring and coupled with a wall liner via a wall liner separator. The cleaning method of the processing chamber is also disclosed.