公开(公告)号：US20240194484A1

公开(公告)日：2024-06-13

申请号：US18379102

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： RUIYING HAO ,  PAOLA DE CECCO ,  MADHUR SACHAN ,  KWANGDUK D. LEE ,  MARTHA SANCHEZ ,  LUISA BOZANO

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  G03F7/094

Abstract: Embodiments disclosed herein include a method for forming a photoresist stack. In an embodiment, the method comprises forming a first photoresist layer over a substrate, where the first photoresist layer is formed with a first dry deposition process, and forming a second photoresist layer over the first photoresist layer, where the second photoresist layer is formed with a second dry deposition process that is different than the first deposition process.