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公开(公告)号:US20240027916A1
公开(公告)日:2024-01-25
申请号:US18198073
申请日:2023-05-16
Applicant: Applied Materials, Inc.
Inventor: RUIYING HAO , TODD EGAN , EDWARD BUDIARTO , PAOLA DE CECCO , REGINA FREED , BEKELE WORKU , MADHUR SACHAN , LUISA BOZANO , KELVIN CHAN
CPC classification number: G03F7/70491 , G03F7/70653 , G03F7/706843 , G03F7/70808 , G03F7/7085
Abstract: Embodiments disclosed herein include a method of monitoring a photoresist deposition process. In an embodiment, the method comprises depositing a photoresist layer to a first thickness over a substrate, measuring a property of the photoresist layer with a first electromagnetic (EM) radiation source, depositing the photoresist layer to a second thickness over the substrate, and measuring the property of the photoresist layer with the first EM radiation source.
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公开(公告)号:US20240194484A1
公开(公告)日:2024-06-13
申请号:US18379102
申请日:2023-10-11
Applicant: Applied Materials, Inc.
Inventor: RUIYING HAO , PAOLA DE CECCO , MADHUR SACHAN , KWANGDUK D. LEE , MARTHA SANCHEZ , LUISA BOZANO
IPC: H01L21/033
CPC classification number: H01L21/0332 , G03F7/094
Abstract: Embodiments disclosed herein include a method for forming a photoresist stack. In an embodiment, the method comprises forming a first photoresist layer over a substrate, where the first photoresist layer is formed with a first dry deposition process, and forming a second photoresist layer over the first photoresist layer, where the second photoresist layer is formed with a second dry deposition process that is different than the first deposition process.
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公开(公告)号:US20240012325A1
公开(公告)日:2024-01-11
申请号:US18204805
申请日:2023-06-01
Applicant: Applied Materials, Inc.
Inventor: LUISA BOZANO , PAOLA DE CECCO , BEKELE WORKU , LAKMAL CHARIDU KALUTARAGE , RUIYING HAO
CPC classification number: G03F7/0043 , H01L21/67225 , G03F7/168
Abstract: Embodiments disclosed herein include a method of optimizing a post deposition bake of a photoresist layer. In an embodiment, the method comprises depositing the photoresist layer on a substrate, baking the photoresist layer, and measuring properties of the photoresist layer with an optical tool.
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