公开(公告)号：US20240027916A1

公开(公告)日：2024-01-25

申请号：US18198073

申请日：2023-05-16

Applicant: Applied Materials, Inc.

Inventor： RUIYING HAO ,  TODD EGAN ,  EDWARD BUDIARTO ,  PAOLA DE CECCO ,  REGINA FREED ,  BEKELE WORKU ,  MADHUR SACHAN ,  LUISA BOZANO ,  KELVIN CHAN

IPC: G03F7/20 ,  G03F7/00

CPC classification number: G03F7/70491 ,  G03F7/70653 ,  G03F7/706843 ,  G03F7/70808 ,  G03F7/7085

Abstract: Embodiments disclosed herein include a method of monitoring a photoresist deposition process. In an embodiment, the method comprises depositing a photoresist layer to a first thickness over a substrate, measuring a property of the photoresist layer with a first electromagnetic (EM) radiation source, depositing the photoresist layer to a second thickness over the substrate, and measuring the property of the photoresist layer with the first EM radiation source.

公开(公告)号：US20240128061A1

公开(公告)日：2024-04-18

申请号：US18233760

申请日：2023-08-14

Applicant: Applied Materials, Inc.

Inventor： FARZAD HOUSHMAND ,  KELVIN CHAN ,  RUIYING HAO ,  WAYNE FRENCH

IPC: H01J37/32

CPC classification number: H01J37/32715 ,  H01J37/32357 ,  H01J37/32449 ,  H01J2237/20214 ,  H01J2237/334

Abstract: Embodiments disclosed herein include a semiconductor processing tool. In an embodiment, the semiconductor processing tool comprises a pedestal, an annular separator over the pedestal to define a first domain within the annular separator and a second domain outside of the annular separator, a first gas inlet within the annular separator, and a second gas inlet outside of the annular separator.

公开(公告)号：US20230064100A1

公开(公告)日：2023-03-02

申请号：US17869412

申请日：2022-07-20

Applicant: Applied Materials, Inc.

Inventor： KELVIN CHAN ,  RUIYING HAO

IPC: C23F1/44 ,  C23C16/455

Abstract: Embodiments disclosed herein include methods for removing a metal containing layer from a chamber of a tool. In an embodiment, the method comprises generating a remote plasma in the tool. The method may continue with flowing reactive species from the remote plasma into the chamber, and flowing a hydrocarbon gas into the chamber. In an embodiment, the method may include reacting the reactive species with the hydrocarbon gas within the chamber. In an embodiment, the method may further comprise etching the metal-containing material in the chamber.

公开(公告)号：US20240194484A1

公开(公告)日：2024-06-13

申请号：US18379102

申请日：2023-10-11

Applicant: Applied Materials, Inc.

Inventor： RUIYING HAO ,  PAOLA DE CECCO ,  MADHUR SACHAN ,  KWANGDUK D. LEE ,  MARTHA SANCHEZ ,  LUISA BOZANO

IPC: H01L21/033

CPC classification number: H01L21/0332 ,  G03F7/094

Abstract: Embodiments disclosed herein include a method for forming a photoresist stack. In an embodiment, the method comprises forming a first photoresist layer over a substrate, where the first photoresist layer is formed with a first dry deposition process, and forming a second photoresist layer over the first photoresist layer, where the second photoresist layer is formed with a second dry deposition process that is different than the first deposition process.

公开(公告)号：US20240012325A1

公开(公告)日：2024-01-11

申请号：US18204805

申请日：2023-06-01

Applicant: Applied Materials, Inc.

Inventor： LUISA BOZANO ,  PAOLA DE CECCO ,  BEKELE WORKU ,  LAKMAL CHARIDU KALUTARAGE ,  RUIYING HAO

IPC: G03F7/004 ,  H01L21/67 ,  G03F7/16

CPC classification number: G03F7/0043 ,  H01L21/67225 ,  G03F7/168

Abstract: Embodiments disclosed herein include a method of optimizing a post deposition bake of a photoresist layer. In an embodiment, the method comprises depositing the photoresist layer on a substrate, baking the photoresist layer, and measuring properties of the photoresist layer with an optical tool.

公开(公告)号：US20240319603A1

公开(公告)日：2024-09-26

申请号：US18581290

申请日：2024-02-19

Applicant: Applied Materials, Inc.

Inventor： ZHENXING HAN ,  MADHUR SACHAN ,  RUIYING HAO ,  NANCY FUNG ,  LIKUN WANG ,  GABRIELA ALVA

IPC: G03F7/16 ,  G03F7/004 ,  G03F7/20

CPC classification number: G03F7/162 ,  G03F7/0043 ,  G03F7/2002

Abstract: Embodiments disclosed herein include a method of patterning a substrate. In an embodiment, the method comprises depositing a metal-oxo layer over a substrate, and applying a chemically amplified resist (CAR) over the metal-oxo layer. In an embodiment, the method further comprises exposing the CAR, and developing the CAR to form a pattern in the CAR. In an embodiment, the method further comprises transferring the pattern into the metal-oxo layer, and transferring the pattern into the substrate.

公开(公告)号：US20230124304A1

公开(公告)日：2023-04-20

申请号：US17903892

申请日：2022-09-06

Applicant: Applied Materials, Inc.

Inventor： Kelvin Chan ,  RUIYING HAO ,  WAYNE FRENCH ,  FARZAD HOUSHMAND

IPC: C23C16/455 ,  C23C14/54 ,  C23C16/52

Abstract: Embodiments include a gas distribution assembly for a semiconductor processing chamber. In an embodiment, the gas distribution assembly comprises a flow ratio controller (FRC). In an embodiment, a first line from the FRC goes to an ampoule, and a second line from the FRC goes to a main line. In an embodiment, a third line from the ampoule goes to the main line. In an embodiment, a mass flow meter is coupled to the main line.